• Power off disable outputs permit “live insertion”
• Meets or exceeds JEDEC standard 18 specifications
• Product available in Radiation Tolerant and Radiation
Enhanced versions
• Military product compliant to MIL-STD-883, Class B
and DESC listed (dual marked)
• Available in DIP, SOIC, QSOP, CERPACK and LCC
packages
FUNCTIONAL BLOCK DIAGRAM
S1S0
DESCRIPTION:
The IDT54/74FCT299T/AT/CT are built using an advanced
dual metal CMOS technology. The IDT54/74FCT299T/AT/
CT are 8-input universal shift/storage registers with 3-state
outputs. Four modes of operation are possible: hold (store),
shift left, shift right and load data. The parallel load inputs and
flip-flop outputs are multiplexed to reduce the total number of
package pins. Additional outputs are provided for flip-flops Q0
and Q7 to allow easy serial cascading. A separate active LOW
Master Reset is used to reset the register.
DS
0
CP
D
P
C
CD
0
Q
MR
OE1
OE2
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
Q
CD
D
P
C
Q
CD
DS7
D
P
C
Q
CD
D
P
C
Q
CD
D
P
C
Q
CD
D
P
C
Q
D
P
C
CD
Q
I/O6I/O5I/O4I/O3I/O2I/O1I/O0I/O7
CD
D
C
Q
2632 drw 01
P
Q7
MILITARY AND COMMERCIAL TEMPERATURE RANGESAPRIL 1995
IDT54/74FCT299T/AT/CT
FAST CMOS 8-INPUT UNIVERSAL SHIFT REGISTERMILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
1
S0
Q0
2
3
4
5
6
7
8
9
10
P20-1
D20-1
SO20-2
SO20-8
E20-1
OE1
OE2
I/O6
I/O4
I/O2
I/O0
MR
GND
DIP/SOIC/QSOP/CERPACK
TOP VIEW
20
Vcc
19
S1
18
DS7
17
Q
7
16
I/O7
15
&
14
13
12
11
I/O5
I/O
I/O
CP
DS
2632 drw 02
PIN DESCRIPTION
Pin NamesDescription
CPClock Pulse Input (Active Edge Rising)
0Serial Data Input for Right Shift
DS
7Serial Data Input for Left Shift
DS
0, S1Mode Select Inputs
S
MR
1, OE23-State Output Enable Inputs (Active LOW)
OE
0–I/O7Parallel Data Inputs or 3-State Parallel Outputs
I/O
0, O7Serial Outputs
O
Asynchronous Master Reset Input (Active LOW)
2
INDEX
I/O
6
I/O
4
I/O
2
I/O
0
3
1
0
Q
0
OE
32
4
5
6
7
8
10 11 12 13
9
MR
1
OE
L20-2
GND
1
0
S
0
DS
Vcc
20 19
CP
1
S
18
17
16
15
14
1
I/O
2632 drw 03
DS
Q
I/O
I/O
I/O
7
7
7
5
3
LCC
TOP VIEW
(1)
0–Q7 = LOW
n→ Qn
7→ Q7, Q7→ Q6, etc.
2632 tbl 01
FUNCTION TABLE
Inputs
1S0CPResponse
MRMRS
LXXXAsynchronous Reset Q
HH H ↑Parallel Load; I/O
HL H ↑Shift Right; DS0→ Q0, Q0→ Q1, etc.
HH L ↑Shift Left; DS
HLLXHold
NOTE:2632 tbl 02
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don’t Care
↑= LOW-to-HIGH clock transition
ABSOLUTE MAXIMUM RATINGS
(1)
SymbolRatingCommercialMilitaryUnit
(2)
VTERM
Terminal Voltage
–0.5 to +7.0–0.5 to +7.0V
with Respect to
GND
(3)
VTERM
TAOperating
Terminal Voltage
with Respect to
GND
–0.5 to
V
CC +0.5
–0.5 to
VCC +0.5
0 to +70–55 to +125°C
V
Temperature
TBIASTemperature
–55 to +125–65 to +135°C
Under Bias
TSTGStorage
–55 to +125–65 to +150°C
Temperature
PTPower Dissipation0.50.5W
IOUTDC Output
–60 to +120 –60 to +120 mA
Current
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not
conditions for extended periods may affect reliability. No terminal voltage
may exceed V
2. Input and V
3. Outputs and I/O terminals only.
implied. Exposure to absolute maximum rating
CC by +0.5V unless otherwise noted.
CC terminals only.
2632 lnk 03
CAPACITANCE (TA = +25°C, f = 1.0MHz)
SymbolParameter
C
IN
Input
Capacitance
C
OUT
Output
Capacitance
NOTE:
1. This parameter is measured at characterization but not tested.
(1)
ConditionsTyp. Max. Unit
VIN = 0V610
V
OUT
= 0V812
pF
pF
2632 lnk 04
6.112
IDT54/74FCT299T/AT/CT
FAST CMOS 8-INPUT UNIVERSAL SHIFT REGISTERMILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Commercial: TA = 0°C to +70°C, VCC = 5.0V ± 5%; Military: TA = –55°C to +125°C, VCC = 5.0V ± 10%
SymbolParameterTest Conditions
V
IHInput HIGH LevelGuaranteed Logic HIGH Level2.0——V
ILInput LOW LevelGuaranteed Logic LOW Level——0.8V
V
(4)
(4)
(4)
VCC = Max., VI = 2.7V——±1µA
VCC = Max., VI = 0.5V——±1µA
VCC = Max., VI = Vcc (Max.)——±1µA
(3)
VO = GND–60–120–225mA
IN = VIH or VILIOH = –8mA COM'L.
V
IN = VIH or VILIOL = 48mA COM'L.
V
IHInput HIGH Current
I
ILInput LOW Current
I
IInput HIGH Current
I
IKClamp Diode VoltageVCC = Min., IN = –18mA—–0.7–1.2V
V
OSShort Circuit CurrentVCC = Max.,
I
OHOutput HIGH VoltageVCC = Min.IOH = –6mA MIL.2.43.3—V