Integrated Device Technology Inc. IDT74FCT540T, IDT74FCT540CT, IDT54FCT540T, IDT54FCT540AT, IDT54FCT540CT User Manual
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I
,
CMOS Static RAM
16K (2K x 8-Bit)
IDT6116SA
IDT6116LA
Features
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High-speed access and chip select times
– Military: 20/25/35/45/55/70/90/120/150ns (max.)
– Industrial: 20/25/35/45ns (max.)
– Commercial: 15/20/25/35/45ns (max.)
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Low-power consumption
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Battery backup operation
– 2V data retention voltage (LA version only)
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Produced with advanced CMOS high-performance
technology
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CMOS process virtually eliminates alpha particle soft-error
rates
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Input and output directly TTL-compatible
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Static operation: no clocks or refresh required
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Available in ceramic and plastic 24-pin DIP, 24-pin Thin Dip,
24-pin SOIC and 24-pin SOJ
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Military product compliant to MIL-STD-833, Class B
Functional Block Diagram
Description
The IDT6116SA/LA is a 16,384-bit high-speed static RAM
organized as 2K x 8. It is fabricated using IDT's high-performance,
high-reliability CMOS technology.
Access times as fast as 15ns are available. The circuit also offers a
reduced power standby mode. When CS goes HIGH, the circuit will
automatically go to, and remain in, a standby power mode, as long
as CS remains HIGH. This capability provides significant system level
power and cooling savings. The low-power (LA) version also offers a
battery backup data retention capability where the circuit typically
consumes only 1µW to 4µW operating off a 2V battery.
All inputs and outputs of the IDT6116SA/LA are TTL-compatible. Fully
static asynchronous circuitry is used, requiring no clocks or refreshing
for operation.
The IDT6116SA/LA is packaged in 24-pin 600 and 300 mil plastic or
ceramic DIP, 24-lead gull-wing SOIC, and 24-lead J-bend SOJ providing
high board-level packing densities.
Military grade product is manufactured in compliance to the latest
version of MIL-STD-883, Class B, making it ideally suited to military
temperature applications demanding the highest level of performance and
reliability.
0
A
ADDRESS
DECODER
A
10
0
/O
INPUT
DATA
CIRCUIT
I/O
7
CS
OE
WE
CONTROL
CIRCUIT
128 X 128
MEMORY
ARRAY
I/O CONTROL
MARCH 2005
CC
V
GND
3089 drw 01
1
©2005 Integrated Device Technology, Inc.
DSC-3089/05
IDT6116SA/LA
G
,
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
Pin Configurations
7
A
A
A
A
A
A
A
A
I/O
I/O
I/O
ND
1
6
2
5
3
4
4
3
5
2
6
1
7
0
8
0
9
1
10
2
11
P24-2
P24-1
D24-2
D24-1
SO24-2
SO24-4
12
DIP/SOIC/SOJ
Top View
Pin Description
Name Description
0
- A
10
A
0
- I/O
7
I/O
CS
WE
OE
CC
V
GND Ground
24
23
22
21
20
19
18
17
16
15
14
13
Address Inputs
Data Inp ut/ Outp ut
Chip Se le ct
Write Enable
Output Enable
V
A
A
WE
OE
A
CS
I/O
I/O
I/O
I/O
I/O
3089 drw 02
Power
CC
8
9
10
Capacitance (TA = +25°C, f = 1.0 MHZ)
Symbol Parameter
C
IN
I/O
C
NOTE:
1. This parameter is determined by device characterization, but is not production
tested.
7
6
5
4
3
3089 tbl 01
Absolute Maximum Ratings
Symbol Rating Com'l. Mil. Unit
V
TERM
A
T
T
BIAS
STG
T
P
T
OUT
I
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
2. VTERM must not exceed VCC +0.5V.
Inp ut Cap ac i tance VIN = 0V 8 pF
I/O Cap ac itanc e V
(2)
Terminal Vo ltage
with Respect
to GND
Operating
Temperature
Temperature
Under Bias
Storage Temperature -55 to +125 -65 to +150oC
Po we r Dis si p atio n 1. 0 1. 0 W
DC Output Current 50 50 mA
(1)
Conditions Max. Unit
OUT
= 0V 8 pF
-0.5 to +7.0 -0.5 to +7.0 V
0 to +70 -55 to +125oC
-55 to +125 -65 to +135oC
3089 tbl 03
(1)
3 0 89 t b l 04
Truth Table
Mode
Standby H X X High-Z
Read L L H DATA
Read L H H High-Z
Write L X L DATA
NOTE:
1. H = VIH, L = VIL, X = Don't Care.
(1)
CS OE WE
I/O
OUT
IN
3 0 89 t b l 02
2
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
Recommended Operating
Temperature and Supply Voltage
Grade
Milita ry -55
Industrial -40
Commercial 0
Ambient
Temperature GND Vcc
O
C to + 125OC0V 5.0V ± 10%
O
C to + 85OC0V 5.0V ± 10%
O
C to +70OC0V 5.0V ± 10%
3089 tbl 05
DC Electrical Characteristics
(VCC = 5.0V ± 10%)
Symbol Parameter Test Conditions
Input Leakage Current
|I
LI
|
|I
LO
| Output Leakag e Curre nt VCC = Max., CS = VIH,
V
OL
Output Low Voltage IOL = 8mA, VCC = Min.
OH
V
Outp ut Hi g h Vol tag e IOH = -4mA, VCC = Min. 2.4
VCC = Max.,
IN =
GND to V
V
OUT
= GND to V
V
CC
CC
Recommended DC
Operating Conditions
Symbol Parameter Min. Typ. Max. Unit
V
CC
Supp ly Voltage 4.5 5.0 5.5
GND Ground 0 0 0 V
V
IH
Input High Vol tage 2.2 3.5 VCC +0.5 V
(1)
V
IL
Inp ut Low Vo ltag e -0. 5
NOTES:
1. V
IL (min.) = –3.0V for pulse width less than 20ns, once per cycle.
IN must not exceed VCC +0.5V.
2. V
____
IDT6116SA IDT6116LA
MIL.
COM'L.
MIL.
COM'L.
____
____
____
____
____
10
5
10
5
0.4
____
____
____
____
____
____
2.4
(2)
0.8 V
5
2
5
2
0.4 V
____
3089 tbl 07
V
3089 tbl 06
UnitMin. Max. Min. Max.
µA
µA
V
DC Electrical Characteristics
(1)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
6116SA15
Com'l
Symbol Parameter Power
CC1
I
I
CC2
I
SB
SB1
I
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC, only address inputs are cycling at fMAX, f = 0 means address inputs are not changing.
Operating Power Supply Current
VIL, Outputs Ope n
CS <
V
CC
= Max., f = 0
Dynamic Operating Current
CS < V
IL
CC
= Max., f = f
V
, Outputs Ope n
MAX
(2)
Standby Po wer Supply Current
(TTL Le ve l)
VIH, Outp uts Op en
CS >
CC
= Max., f = f
V
MAX
(2)
Full Standby Power Supply Current
(CMOS Le v el )
CS > V
HC
, VCC = Max.,
IN
< VLC or VIN > VHC, f = 0
V
SA 105 105 130 80 90 80 90
LA 95 95 120 75 85 75 85
SA 150 130 150 120 135 100 115
LA 140 120 140 110 125 95 105
SA 40 40 50 40 45 25 35
LA 35 35 45 35 40 25 30
SA 2 2 10 2 10 2 10
LA 0.1 0.1 0.9 0.1 0.9 0.1 0.9
Only
6116SA20
6116LA20
Com'l
& In d
Mil
6116SA25
6116LA25
Com'l
& In d
Mil
6116SA35
6116LA35
Com'l.
& Ind. M il
Unit
mA
mA
mA
mA
3089 tbl 08
6.42
3
IDT6116SA/LA
CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and Industrial Temperature Ranges
(1)
DC Electrical Characteristics
(continued)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
6116SA45
6116LA45
Com'l
Symbol Parameter Power
CC1
Operating Power Supply
I
Current , CS <
VIL,
Outputs Open
CC
= Max., f = 0
V
CC2
Dynamic Operating
I
Current , CS <
Outputs Open
CC
= Max., f = f
V
SB
Standby Power Supply
I
VIL,
MAX
(2)
Curren t (TTL Lev el)
VIH, Outp uts Op en
CS >
V
SB1
Full Standby Power
I
CC
= Max., f = f
MAX
(2)
Supply Current (CMOS
Level), CS >
CC
V
VHC,
= Max., VIN < V
LC
or VIN > VHC, f = 0
NOTES:
1. All values are maximum guaranteed values.
2. fMAX = 1/tRC, only address inputs are toggling at fMAX, f = 0 means address inputs are not changing.
& Ind
SA 80 90 90 90 90 90 90
LA 75 85 85 85 85 85 85
SA 100 100 100 100 100 100 90
LA 90 95 90 90 85 85 85
SA 25 25 25 25 25 25 25
LA 20 20 20 20 25 15 15
SA 2 10 10 10 10 10 10
LA 0.1 0.9 0.9 0.9 0.9 0.9 0.9
6116SA55
6116LA55
6116SA70
6116LA70
6116SA90
6116LA90
6116SA120
6116LA120
6116SA150
6116LA150
Mil Mil Only Mil Only Mil Only Mil Only Mil Only
3089 tbl 09
Unit
mA
mA
mA
mA
Data Retention Characteristics Over All Temperature Ranges
(LA Version Only) (VLC = 0.2V, VHC = VCC – 0.2V)
(1)
Typ.
VCC @
Symbol Parameter Test Condition M in. 2.0V 3. 0V 2.0V 3.0V Unit
V
I
CCDR
DR
VCC fo r Da ta R e tent i o n
Data Re te ntio n Cu rre nt MIL.
____
COM'L.
(3)
t
CDR
Chip De s e le c t to Data
Retention Time
(3)
R
t
I
I
LI
I
NOTES:
1. TA = + 25°C
2. tRC = Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
Op e ration Re c o ve ry Tim e
Input Leakag e Current
V
HC
CS >
VIN > VHC or < V
LC
2.0
____
____
____
(2)
RC
t
____ ____ ____
____ ____ ____ ____
0.5
0.5
0
____ ____ ____ ____
1.5
1.5
____ ____ ____
Max.
V
CC
@
200
20
300
30
22
V
µA
ns
ns
µA
3089 tbl 10
4
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