Integrated Device Technology Inc IDT54FCT151ATD, IDT54FCT151ATDB, IDT54FCT151ATE, IDT54FCT151CTE, IDT54FCT151CTEB Datasheet
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Integrated Device Technology, Inc.
FAST CMOS
8-INPUT MULTIPLEXER
IDT54/74FCT151T/AT/CT
FEATURES:
• Std., A, and C speed grades
• Low input and output leakage ≤1µA (max.)
• Extended commercial range of –40°C to +85°C
• CMOS power levels
• True TTL input and output compatibility
– VOH = 3.3V (typ.)
– VOL = 0.3V (typ.)
• High drive outputs (-15mA I
OH, 48mA IOL)
• Power off disable outputs permit “live insertion”
• Meets or exceeds JEDEC standard 18 specifications
• Product available in Radiation Tolerant and Radiation
Enhanced versions
• Military product compliant to MIL-STD-883, Class B
and DESC listed (dual marked)
• Available in DIP, SOIC, CERPACK and LCC packages
FUNCTIONAL BLOCK DIAGRAM
I7
I
6
DESCRIPTION:
The IDT54/74FCT151T/AT/CT are high-speed 8-input multiplexers built using an advanced dual metal CMOS technology. They select one bit of data from up to eight sources under
the control of three select inputs. Both assertion and negation
outputs are provided.
The IDT54/74FCT151T/AT/CT has a common Active-LOW
enable (E) input. When E is LOW, data from one of eight inputs
is routed to the complementary outputs according to the 3-bit
code applied to the Select (S0-S2) inputs. A common application of the ‘FCT151 is data routing from one of eight
sources.
I5
I4
I3
I2
I1
I0
2 S1 S0 E
S
Z
Z
2635 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES SEPTEMBER 1996
1997 Integrated Device Technology, Inc. 6.5 DSC-2635/5
1
IDT54/74FCT151T/AT/CT
FAST CMOS 8-INPUT MULTIPLEXER MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
VCC1
I4
I
I6
I7
S0
S1
S2
5
GND
3
I
I2
2
3
I1
I0
Z
Z
E
4
5
6
7
P16-1
D16-1
SO16-1
&
E16-1
89
16
15
14
13
12
11
10
DIP/SOIC/CERPACK
TOP VIEW
ABSOLUTE MAXIMUM RATINGS
(1)
2635 drw 02
Symbol Description Max. Unit
(2)
VTERM
Terminal Voltage with Respect to
–0.5 to +7.0 V
GND
(3)
VTERM
Terminal Voltage with Respect to
GND
–0.5 to
V
CC +0.5
V
TSTG Storage Temperature –65 to +150 °C
IOUT DC Output Current –60 to +120 mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability. No terminal voltage may exceed
V
CC by +0.5V unless otherwise noted.
2. Input and V
3. Outputs and I/O terminals only.
CC terminals only.
2635 lnk 01
CAPACITANCE (TA = +25°C, f = 1.0MHz)
Symbol Parameter
CIN Input
Capacitance
COUT Output
Capacitance
NOTE:
1. This parameter is measured at characterization but not tested.
(1)
Conditions Typ. Max. Unit
VIN = 0V 6 10 pF
VOUT = 0V 8 12 pF
2635 lnk 02
INDEX
NC
I2
3 2 20 19
I1
4
I0
5
6
Z
7
8
z
9 10111213
E
I3
1
L20-2
GND
NC
NC
CC
V
2
S
I4
18
17
16
15
14
5
I
I6
NC
7
I
S0
S1
2635 drw 03
LCC
TOP VIEW
PIN DESCRIPTION
Pin Names Description
I0 - I
7
S0 - S
2
E
Z Data Output
Z
FUNCTION TABLE
S2 S1 S0
X
L
L
L
L
H
H
H
H
NOTE: 2635 tbl 04
1. H = HIGH Voltage Level, L = LOW Voltage Level, X = Don’t care, Z =
High Impedance.
Data Inputs
Selects Inputs
Enable Input (Active LOW)
Inverted Data Output
(1)
Inputs Outputs
E
X
L
L
H
H
L
L
H
H
X
L
H
L
H
L
H
L
H
H
L
L
L
L
L
L
L
L
Z
L
I
0
I1
I2
I3
I4
I5
I6
I7
2635 tbl 03
Z
H
I
0
I
1
I
2
I
3
I
4
I
5
I
6
I
7
6.5 2
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