Integrated Device Technology Inc IDT54827CL, IDT54827CLB, IDT54827CP, IDT54827CPB, IDT54827CSO Datasheet
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Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES MAY 1992
1992 Integrated Device Technology, Inc. 7.20 DSC-4612/2
FEATURES:
• Faster than AMD’s Am29827 series
• Equivalent to AMD’s Am29827 bipolar buffers in pinout/
function, speed and output drive over full temperature
and voltage supply extremes
• IDT54/74FCT827A equivalent to FAST
• IDT54/74FCT827B 35% faster than FAST
• IDT54/74FCT827C 45% faster than FAST
•IOL = 48mA (commercial), and 32mA (military)
• Clamp diodes on all inputs for ringing suppression
• CMOS power levels (1mW typ. static)
• TTL input and output level compatible
• CMOS output level compatible
• Substantially lower input current levels than AMD’s
bipolar Am29800 series (5µA max.)
• Product available in Radiation Tolerant and Radiation
Enhanced versions
• Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The IDT54/74FCT800 series is built using an advanced
dual metal CMOS technology.
The IDT54/74FCT827A/B/C 10-bit bus drivers provide
high-performance bus interface buffering for wide data/ address paths or buses carrying parity. The 10-bit buffers have
NAND-ed output enables for maximum control flexibility.
All of the IDT54/74FCT800 high-performance interface
family are designed for high-capacitance load drive capability,
while providing low-capacitance bus loading at both inputs
and outputs. All inputs have clamp diodes and all outputs are
designed for low-capacitance bus loading in high-impedance
state.
IDT54/74FCT827A
IDT54/74FCT827B
IDT54/74FCT827C
D0
Y0
D1
Y1
D2
Y2
D3
Y3
D4
Y4
D5
Y5
D6
Y6
D7
Y7
D8
Y8
D9
Y9
OE1 OE2
2609 drw 01
HIGH-PERFORMANCE
CMOS BUFFERS
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
FAST is a trademark of National Semiconductor Co.
FUNCTIONAL BLOCK DIAGRAM
PRODUCT SELECTOR GUIDE
2609 tbl 01
1
10-Bit Buffer
Non-inverting IDT54/74FCT827A/B/C
7.20 2
IDT54/74FCT827A/B/C
HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES
LOGIC SYMBOLPIN CONFIGURATIONS
PIN DESCRIPTION FUNCTION TABLE
(1)
NOTE: 2609 tbl 03
1. H = HIGH, L = LOW, X = Don’t Care, Z = High Impedance
2609 tbl 02
ABSOLUTE MAXIMUM RATINGS
(1)
CAPACITANCE (TA = +25°C, f = 1.0MHz)
NOTES: 2609 tbl 04
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. No terminal voltage may
exceed V
CC by +0.5V unless otherwise noted.
2. Input and VCC terminals only.
3. Outputs and I/O terminals only.
Symbol Parameter
(1)
Conditions Typ. Max. Unit
CIN Input
Capacitance
VIN = 0V 6 10 pF
COUT Output
Capacitance
VOUT = 0V 8 12 pF
NOTE: 2609 tbl 05
1. This parameter is measured at characterization but not tested.
DIP/CERPACK/SOIC
TOP VIEW
LCC
TOP VIEW
Symbol Rating Commercial Military Unit
VTERM
(2)
Terminal Voltage
with Respect to
GND
–0.5 to +7.0 –0.5 to +7.0 V
VTERM
(3)
Terminal Voltage
with Respect to
GND
–0.5 to V
CC –0.5 to VCC V
TA Operating
Temperature
0 to +70 –55 to +125 °C
TBIAS Temperature
Under Bias
–55 to +125 –65 to +135 °C
TSTG Storage
Temperature
–55 to +125 –65 to +150 °C
PT Power Dissipation 0.5 0.5 W
IOUT DC Output
Current
120 120 mA
OE1
D0-9 Y0-9
10
OE2
OE1
D0
D1
D2
D3
D4
D5
D6
D7
GND
Y
0
Y1
Y2
Y3
Y4
Y6
Y5
Y7
VCC1
2
3
4
5
6
7
8
9
10
13
14
15
16
17
18
19
20
P24-1
D24-1
E24-1
&
SO24-2
11
12
21
22
23
24
D
8
D9
Y8
Y9
INDEX
D2
Y2
Y3
Y4
NC
Y
5
OE
1
D
1
NC
V
CCY0
D
8
GND
OE
2
Y
9
Y
8
32
20
19
1
4
5
6
7
8
1817161514
9
10
11
1213
L28-1
D3
D4
NC
D
5
D6
D7
D
0
Y
1
Y6
Y7
21
22
23
24
25
262728
D
9
NC
OE2
10
2609 drw 02
2609 drw 03
2609 drw 04
Name I/O Description
OE
I I When both are LOW, the outputs are
enabled. When either one or both are
HIGH, the outputs are High Z.
DI I 10-bit data input.
YI O 10-bit data output.
Inputs Output
OE
OE
1
OE
OE
2 DI YI Function
L
L
L
L
L
H
L
H
Transparent
H
X
X
H
X
X
Z
Z
Three-State
IDT54/74FCT827A/B/C
HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES
7.20 3
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified: VLC = 0.2V; VHC = VCC – 0.2V
Commercial: TA = 0°C to +70°C, VCC = 5.0V ± 5%; Military: TA = –55°C to +125°C, VCC = 5.0V ± 10%
NOTES: 2609 tbl 06
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC = 5.0V, +25°C ambient and maximum loading.
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
4. This parameter is guaranteed but not tested.
Symbol Parameter Test Conditions
(1)
Min. Typ.
(2)
Max. Unit
VIH Input HIGH Level Guaranteed Logic HIGH Level 2.0 — — V
VIL Input LOW Level Guaranteed Logic LOW Level — — 0.8 V
II H Input HIGH Current VCC = Max. VI = VCC —— 5µA
VI = 2.7V — — 5
(4)
II L Input LOW Current VI = 0.5V — — –5
(4)
VI = GND — — –5
IOZH Off State (High Impedance) VCC = Max. VO = VCC ——10µA
Output Current VO = 2.7V — — 10
(4)
IOZL VO = 0.5V — — –10
(4)
VO = GND — — –10
VIK Clamp Diode Voltage VCC = Min., IN = –18mA — –0.7 –1.2 V
IOS Short Circuit Current VCC = Max.
(3)
, VO = GND –75 –120 — mA
VOH Output HIGH Voltage VCC = 3V, VIN = VLC or VHC, IOH = –32µAVHC VCC —V
VCC = Min. IOH = –300µA VHC VCC —
VIN = VIH or VIL IOH = –15mA MIL. 2.4 4.3 —
IOH = –24mA COM'L. 2.4 4.3 —
VOL Output LOW Voltage VCC = 3V, VIN = VLC or VHC, IOL = 300µA — GND VLC V
VCC = Min. IOL = 300µA — GND VLC
(4)
VIN = VIH or VIL IOL = 32mA MIL. — 0.3 0.5
IOL = 48mA COM'L. — 0.3 0.5
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