3.3 VOLT CMOS
ASYNCHRONOUS FIFO
512 x 9, 1024 x 9, 2048 x 9, 4096 x 9
IDT72V01
IDT72V02
IDT72V03
IDT72V04
FEATURES:
• 3.3V family uses 70% less power than the 5 Volt 7201/
02/03/04 family
• 512 x 9 organization (72V01)
• 1024 x 9 organization (72V02)
• 2048 x 9 organization (72V03)
• 4096 X 9 organization (72V04)
• Functionally compatible with 720x family
• 25 ns access time
• Asynchronous and simultaneous read and write
• Fully expandable by both word depth and/or bit width
• Status Flags: Empty, Half-Full, Full
• Auto-retransmit capability
• Available in 32-pin PLCC and 28-pin SOIC Package (to
be determined)
• Industrial temperature range (-40
o
C to +85oC) is avail-
able, tested to military electrical specifications
DESCRIPTION:
The IDT72V01/72V02/72V03/72V04 are dual-port FIFO
memories that operate at a power supply voltage (Vcc)
between 3.0V and 3.6V. Their architecture, functional operation and pin assignments are identical to those of the IDT7201/
7202/7203/7204. These devices load and empty data on a
first-in/first-out basis. They use Full and Empty flags to
prevent data overflow and underflow and expansion logic to
allow for unlimited expansion capability in both word size and
depth.
The reads and writes are internally sequential through the
use of ring pointers, with no address information required to
load and unload data. Data is toggled in and out of the devices
through the use of the Write (W) and Read (R) pins. The devices
have a maximum data access time as fast as 25 ns.
The devices utilize a 9-bit wide data array to allow for
control and parity bits at the user’s option. This feature is
especially useful in data communications applications where
it is necessary to use a parity bit for transmission/reception
error checking. They also feature a Retransmit (RT) capability
that allows for reset of the read pointer to its initial position
when RT is pulsed low to allow for retransmission from the
beginning of data. A Half-Full Flag is available in the single
device mode and width expansion modes.
The IDT72V01/72V02/72V03/72V04 is fabricated using
IDT’s high-speed CMOS technology. It has been designed for
those applications requiring asynchronous and simultaneous
read/writes in multiprocessing and rate buffer applications.
FUNCTIONAL BLOCK DIAGRAM
DATA INPUTS
0(D –D8)
W
R
XI
CEMOS is a trademark of Integrated Device Technology, Inc.
FAST is a trademark of National Semiconductor Co.
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
RAM
ARRAY
512x 9
1024 x 9
2048 x 9
4096 x 9
DATA OUTPUTS
0(Q –Q8)
EFFF
XO/HF
5.081
READ
POINTER
RS
RESET
LOGIC
FL/RT
2679 drw 01
IDT72V01/72V02/72V03/72V04 3.3 VOLT CMOS ASYNCHRONOUS FIFO
512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9COMMERCIAL TEMPERATURE RANGE
PIN CONFIGURATIONS
W
D8
1
2
28
27
D3D5326
D2D6425
D1D7524
D0
XIRS
FFEF
Q0
623
722
821
920
Q1Q71019
Q2Q61118
Q3Q51217
Q8Q41316
GND
1415
SMALL OUTLINE PACKAGE TO BE DETERMINED
ABSOLUTE MAXIMUM RATINGS
SymbolRatingCom’l.Unit
V
TERMTerminal Voltage –0.5 to +7.0 V
with Respect
to GND
T
AOperating 0 to +70°C
Temperature
T
BIASTemperature –55 to +125°C
Under Bias
T
STGStorage –55 to +125°C
Temperature
I
OUTDC Output50mA
Current
NOTE:2679 tbl 01
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliabilty.
VCC
D4
FL/RT
XO/HF
R
2679 drw 02a
(1)
INDEX
D25
16
D
07
D
XI
FF
010
Q
111
Q
NC12
213
Q
8
3
D
D
WNCV
3 2132 31 30
4
8
J32-1
9
CC
4
5
D
D
29
28
27
26
25
24
23
22
21
D6
D7
NC
FL/RTRSEFXO/HF
7
Q
Q6
14 15 16 17 18 19 20
Q3Q
8
GND
NC
4Q5
R
Q
2679 drw 02b
PLCC
TOP VIEW
RECOMMENDED DC OPERATING
CONDITIONS
SymbolRatingMin.Typ.Max.Unit
CCSupply Voltage 3.0 3.33.6V
V
GNDSupply Voltage 0 00V
(1)
IH
V
IL
V
NOTE:2679 tbl 03
1. VIH = 2.6V for XI input (commercial).
2. 1.5V undershoots are allowed for 10ns once per cycle.