Integrated Device Technology Inc IDT72V01L25J, IDT72V01L35J, IDT72V02L25J, IDT72V02L35J, IDT72V03L25J Datasheet

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Integrated Device Technology, Inc.
3.3 VOLT CMOS ASYNCHRONOUS FIFO 512 x 9, 1024 x 9, 2048 x 9, 4096 x 9
IDT72V01 IDT72V02 IDT72V03
IDT72V04
FEATURES:
• 3.3V family uses 70% less power than the 5 Volt 7201/ 02/03/04 family
• 512 x 9 organization (72V01)
• 1024 x 9 organization (72V02)
• 2048 x 9 organization (72V03)
• 4096 X 9 organization (72V04)
• Functionally compatible with 720x family
• 25 ns access time
• Asynchronous and simultaneous read and write
• Fully expandable by both word depth and/or bit width
• Status Flags: Empty, Half-Full, Full
• Auto-retransmit capability
• Available in 32-pin PLCC and 28-pin SOIC Package (to be determined)
• Industrial temperature range (-40
o
C to +85oC) is avail-
able, tested to military electrical specifications
DESCRIPTION:
The IDT72V01/72V02/72V03/72V04 are dual-port FIFO memories that operate at a power supply voltage (Vcc) between 3.0V and 3.6V. Their architecture, functional opera­tion and pin assignments are identical to those of the IDT7201/
7202/7203/7204. These devices load and empty data on a first-in/first-out basis. They use Full and Empty flags to prevent data overflow and underflow and expansion logic to allow for unlimited expansion capability in both word size and depth.
have a maximum data access time as fast as 25 ns.
The devices utilize a 9-bit wide data array to allow for control and parity bits at the user’s option. This feature is especially useful in data communications applications where it is necessary to use a parity bit for transmission/reception error checking. They also feature a Retransmit (RT) capability that allows for reset of the read pointer to its initial position when RT is pulsed low to allow for retransmission from the beginning of data. A Half-Full Flag is available in the single device mode and width expansion modes.
The IDT72V01/72V02/72V03/72V04 is fabricated using IDT’s high-speed CMOS technology. It has been designed for those applications requiring asynchronous and simultaneous read/writes in multiprocessing and rate buffer applications.
FUNCTIONAL BLOCK DIAGRAM
DATA INPUTS
0(D –D8)
W
R
XI
CEMOS is a trademark of Integrated Device Technology, Inc. FAST is a trademark of National Semiconductor Co.
COMMERCIAL TEMPERATURE RANGE DECEMBER 1996
1996 Integrated Device Technology, Inc. DSC-3033/6
WRITE
CONTROL
WRITE
POINTER
THREE­STATE BUFFERS
READ
CONTROL
FLAG
LOGIC
EXPANSION
LOGIC
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
RAM
ARRAY
512x 9 1024 x 9 2048 x 9 4096 x 9
DATA OUTPUTS
0(Q –Q8)
EF FF
XO/HF
5.08 1
READ
POINTER
RS
RESET
LOGIC
FL/RT
2679 drw 01
IDT72V01/72V02/72V03/72V04 3.3 VOLT CMOS ASYNCHRONOUS FIFO 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 COMMERCIAL TEMPERATURE RANGE
PIN CONFIGURATIONS
W
D8
1 2
28
27 D3 D5326 D2 D6425 D1 D7524 D0
XI RS
FF EF
Q0
623 722 821
920 Q1 Q710 19 Q2 Q611 18 Q3 Q512 17 Q8 Q413 16
GND
14 15
SMALL OUTLINE PACKAGE TO BE DETERMINED
ABSOLUTE MAXIMUM RATINGS
Symbol Rating Com’l. Unit
V
TERM Terminal Voltage –0.5 to +7.0 V
with Respect to GND
T
A Operating 0 to +70 °C
Temperature
T
BIAS Temperature –55 to +125 °C
Under Bias
T
STG Storage –55 to +125 °C
Temperature
I
OUT DC Output 50 mA
Current
NOTE: 2679 tbl 01
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliabilty.
VCC D4
FL/RT
XO/HF
R
2679 drw 02a
(1)
INDEX
D2 5
1 6
D
0 7
D
XI
FF
0 10
Q
1 11
Q
NC 12
2 13
Q
8
3
D
D
WNCV
3 2132 31 30
4
8
J32-1
9
CC
4
5
D
D
29 28 27 26 25 24 23 22 21
D6 D7 NC
FL/RT RS EF XO/HF
7
Q Q6
14 15 16 17 18 19 20
Q3Q
8
GND
NC
4Q5
R
Q
2679 drw 02b
PLCC
TOP VIEW
RECOMMENDED DC OPERATING CONDITIONS
Symbol Rating Min. Typ. Max. Unit
CC Supply Voltage 3.0 3.3 3.6 V
V GND Supply Voltage 0 0 0 V
(1)
IH
V
IL
V
NOTE: 2679 tbl 03
1. VIH = 2.6V for XI input (commercial).
2. 1.5V undershoots are allowed for 10ns once per cycle.
Input High Voltage 2.0 VCC+0.5 V
(2)
Input Low Voltage 0.8 V
CAPACITANCE (TA = +25°C, f = 1.0 MHz)
Symbol Parameter
C
IN Input Capacitance VIN = 0V 8 pF OUT Output Capacitance VOUT = 0V 8 pF
C
NOTE: 2679 tbl 02
1. This parameter is sampled and not 100% tested.
(1)
Condition Max. Unit
5.08 2
IDT72V01/72V02/72V03/72V04 3.3 VOLT CMOS ASYNCHRONOUS FIFO 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 COMMERCIAL TEMPERATURE RANGE
DC ELECTRICAL CHARACTERISTICS
(Commercial: VCC = 3.3 V ± 0.3V, TA = 0°C to +70°C)
IDT72V01/72V02/ IDT72V01/72V02/
72V03/72V04 72V03/72V04
Commercial Commercial
t
A = 25 ns tA = 35 ns
Symbol Parameter Min. Typ. Max. Min. Typ. Max. Unit
(1)
LI
I
(2)
LO
I
OH Output Logic “1” Voltage IOH = –2mA 2.4 2.4 V
V
OL Output Logic “0” Voltage IOL = 8mA 0.4 0.4 V
V
(3,4)
CC1
I
(3)
CC2
I
CC3(L)
I
NOTES: 2679 tbl 05
1. Measurements with 0.4 VIN VCC.
2.R V
CC measurements are made with outputs open (only capacitive loading).
3. I
4. Tested at f = 20MHz.
Input Leakage Current (Any Input) –1 1 –1 1 µA Output Leakage Current –10 10 –10 10 µA
Active Power Supply Current 35 50 35 50 mA Standby Current (R=W=RS=FL/RT=VIH)—5858mA
(3)
Power Down Current (All Input = VCC - 0.2V) 0.3 0.3 mA
IH, 0.4 VOUT VCC.
5.08 3
IDT72V01/72V02/72V03/72V04 3.3 VOLT CMOS ASYNCHRONOUS FIFO 512 x 9, 1,024 x 9, 2,048 x 9, 4,096 x 9 COMMERCIAL TEMPERATURE RANGE
AC ELECTRICAL CHARACTERISTICS
(Commercial: VCC = 3.3V±0.3V, TA = 0°C to +70°C)
Commercial Commercial 72V01L25/72V02L25 72V01L35/72V02L35 72V03L25/72V04L25 72V03L35/72V04L35
Symbol Parameter Min. Max. Min. Max. Unit
S Shift Frequency 28.5 22.2 MHz
f
RC Read Cycle Time 35 45 ns
t t
A Access Time 25 35 ns RR Read Recovery Time 10 10 ns
t
RPW Read Pulse Width
t t
RLZ Read Pulse Low to Data Bus at Low Z WLZ Write Pulse High to Data Bus at Low Z
t
DV Data Valid from Read Pulse High 5 5 ns
t t
RHZ Read Pulse High to Data Bus at High Z WC Write Cycle Time 35 45 ns
t
WPW Write Pulse Width
t t
WR Write Recovery Time 10 10 ns
DS Data Set-up Time 15 18 ns
t
DH Data Hold Time 0 0 ns
t
RSC Reset Cycle Time 35 45 ns
t t
RS Reset Pulse Width
RSS Reset Set-up Time
t
RSR Reset Recovery Time 10 10 ns
t t
RTC Retransmit Cycle Time 35 45 ns
RT Retransmit Pulse Width
t
RTS Retransmit Set-up Time
t t
RTR Retransmit Recovery Time 10 10 ns EFL Reset to Empty Flag Low 35 45 ns
t
HFH,FFH Reset to Half-Full and Full Flag High 35 45 ns
t t
RTF Retransmit Low to Flags Valid 35 45 ns REF Read Low to Empty Flag Low 25 30 ns
t
RFF Read High to Full Flag High 25 30 ns
t
RPE Read Pulse Width after
t t
WEF Write High to Empty Flag High 25 30 ns WFF Write Low to Full Flag Low 25 30 ns
t
WHF Write Low to Half-Full Flag Low 35 45 ns
t t
RHF Read High to Half-Full Flag High 35 45 ns WPF Write Pulse Width after
t
XOL Read/Write to
t t
XOH Read/Write to
XI
t
XIR
t t
XIS
NOTES: 2679 tbl 06
1. Timings referenced as in AC Test Conditions. 3. Values guaranteed by design, not currently tested.
2. Pulse widths less than minimum value are not allowed. 4. Only applies to read data flow-through mode.
XI
Pulse Width
XI
Recovery Time 10 10 ns
XI
Set-up Time 10 10 ns
(2)
(3)
(3,4)
(3)
(2)
(2)
(3)
(2)
(3)
EF
High 25 35 ns
FF
High 25 35 ns
XO
Low 25 35 ns
XO
High 25 35 ns
(2)
25 35 ns
5—5—ns 5—10—ns
18 20 ns
25 35 ns
25 35 ns 25 35 ns
25 35 ns 25 35 ns
25 35 ns
5.08 4
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