• Offers optimal combination of data capacity, small foot
print and functional flexibility
• Ideal for bi-directional, width expansion, depth expansion, bus-matching, and data sorting applications
• Status Flags: Empty, Half-Full, Full
• Auto-retransmit capability
• High-performance CMOS technology
• Space-saving TSSOP
• Industrial temperature range (-40
able, tested to military electrical specifications
o
C to +85oC) is avail-
DESCRIPTION:
The IDT7280/7281/7282 are dual-FIFO memories that
load and empty data on a first-in/first-out basis. These devices
are functional and compatible to two 7200/7201/7202 FIFOs
kin a single package with all associated control, data, and flag
lines assigned to separate pins. The devices use Full and
Empty flags to prevent data overflow and underflow and
expansion logic to allow for unlimited expansion capability in
both word size and depth.
The reads and writes are internally sequential through the
use of ring pointers, with no address information required to
load and unload data. Data is toggled in and out of the devices
through the use of the Write (W) and Read (R) pins.
The devices utilize a 9-bit wide data array to allow for
control and parity bits at the user’s option. This feature is
especially useful in data communications applications where
it is necessary to use a parity bit for transmission/reception
error checking. It also features a Retransmit (RT) capability
that allows for reset of the read pointer to its initial position
when RT is pulsed low to allow for retransmission from the
beginning of data. A Half-Full Flag is available in the single
device mode and width expansion modes.
The IDT7280/7281/7282 are fabricated using IDT’s highspeed CMOS technology. They are designed for those applications requiring asynchronous and simultaneous read/writes
in multiprocessing and rate buffer applications.
FUNCTIONAL BLOCK DIAGRAM
DATA INPUTS
(DA –DA8)
WA
RA
The IDT logo is a trademark of Integrated Device Technology, Inc.
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
5.071
THREE-
STATE
BUFFERS
DATA INPUTS
0
8)
(DB –DB
RAM
ARRAY B
256 x 9
512 x 9
1024 x 9
DATA
OUTPUTS
0(QB –QB 8)
READ
POINTER
RESET
LOGIC
FLB/RTB
RSB
3208 drw 01
IDT7280/7281/7282 CMOS DUAL ASYNCHRONOUS FIFOPRELIMINARY INFORMATION
DUAL 256 x 9, DUAL 512 x 9 and DUAL 1K x 9COMMERCIAL TEMPERATURE RANGE
FFA
PIN CONFIGURATIONS
XOA/HFA
XOB/HFB
ABSOLUTE MAXIMUM RATINGS
GND
GND
(1)
1
0
QA
2
QA1
3
QA2
4
QA3
5
QA8
6
7
RA
8
4
QA
9
QA5
10
QA6
11
QA7
12
13
EFA
14
FFB
15
0
QB
16
QB1
17
QB2
18
QB3
19
QB8
20
21
RB
22
4
QB
23
QB5
24
DIP/SOIC/CERPACK
QB6
25
QB7
26
27
EFB
28
TOP VIEW
TOP VIEW
Symbol RatingCom’l.Unit
V
TERMTerminal Voltage –0.5 to +7.0V
with Respect
to GND
T
AOperating 0 to +70°C
Temperature
T
BIASTemperature –55 to +125°C
Under Bias
T
STGStorage –55 to +125°C
Temperature
I
OUTDC Output50mA
Current
NOTE: 3208 tbl 01
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliabilty.
RECOMMENDED DC OPERATING
CONDITIONS
Symbol ParameterMin.TypeMax. Unit
V
CCSupply Voltage4.55.05.5V
GNDSupply Voltage000V
(1)
IH
V
(2)
V
IL
NOTE:3208 tbl 03
1. VIH = 2.6V for XI input (commercial).
2. 1.5V undershoots are allowed for 10ns once per cycle.
Intput High Voltage2.0——V
Intput Low Voltage——0.8V
taken to a low state. During reset, both internal read and write
pointers are set to the first location. A reset is required after
power up before a write operation can take place. Both the
Read Enable (
the high state during the window shown in Figure 2, (i.e.,
tRSS before the rising edge of
until tRSR after the rising edge of
will be reset to high after Reset (
WRITE ENABLE (
Full Flag (FF) is not set. Data set-up and hold times must be
adhered to with respect to the rising edge of the Write Enable
(W). Data is stored in the RAM array sequentially and independently of any on-going read operation.
the next write operation, the Half-Full Flag (HF) will be set to
low and will remain set until the difference between the write
pointer and read pointer is less than or equal to one half of the
total memory of the device. The Half-Full Flag (HF) is then
reset by the rising edge of the read operation.
inhibiting further write operations. Upon the completion of a
valid read operation, the Full Flag (FF) will go high after t
allowing a valid write to begin. When the FIFO is full, the
internal write pointer is blocked from W, so external changes
in W will not affect the FIFO when it is full.
READ ENABLE (
Enable (R) provided the Empty Flag (EF) is not set. The data
is accessed on a First-In/First-Out basis, independent of any
ongoing write operations. After Read Enable (R) goes high,
RSRS)
Reset is accomplished whenever the Reset (RS) input is
RR) and Write Enable (
WW) inputs must be in
RSRS) and should not change
RSRS. Half-Full Flag (
HFHF)
RSRS).
WW)
A write cycle is initiated on the falling edge of this input if the
After half of the memory is filled and at the falling edge of
To prevent data overflow, the Full Flag (FF) will go low,
RFF,
RR)
A read cycle is initiated on the falling edge of the Read
5V
1.1K
TO
OUTPUT
PIN
680Ω
or equivalent circuit
Figure 1. Output Load
* Includes scope and jig capacitances.
30pF*
3208 drw 03
the Data Outputs (Q0 – Q8) will return to a high impedance
condition until the next Read operation. When all data has
been read from the FIFO, the Empty Flag (EF) will go low,
allowing the “final” read cycle but inhibiting further read
operations with the data outputs remaining in a high impedance state. Once a valid write operation has been accomplished, the Empty Flag (EF) will go high after tWEF and a valid
Read can then begin. When the FIFO is empty, the internal
read pointer is blocked from R so external changes in R will not
affect the FIFO when it is empty.
FIRST LOAD/RETRANSMIT (
FLFL/
RTRT)
This is a dual-purpose input. In the Depth Expansion
Mode, this pin is grounded to indicate that it is the first loaded
(see Operating Modes). In the Single Device Mode, this pin
acts as the restransmit input. The Single Device Mode is
initiated by grounding the Expansion In (XI).
The IDT7280/7281/7282 can be made to retransmit data
when the Retransmit Enable control (RT) input is pulsed low.
A retransmit operation will set the internal read pointer to the
first location and will not affect the write pointer. Read Enable
(R) and Write Enable (W) must be in the high state during
retransmit. This feature is useful when less than 256/512/
1024 writes are performed between resets. The retransmit
feature is not compatible with the Depth Expansion Mode and
will affect the Half-Full Flag (HF), depending on the relative
locations of the read and write pointers.
EXPANSION IN (
XIXI)
This input is a dual-purpose pin. Expansion In (XI) is
grounded to indicate an operation in the single device mode.
Expansion In (XI) is connected to Expansion Out (XO) of the
previous device in the Depth Expansion or Daisy Chain Mode.
OUTPUTS:
FULL FLAG (
The Full Flag (FF) will go low, inhibiting further write
operation, when the write pointer is one location less than the
read pointer, indicating that the device is full. If the read
pointer is not moved after Reset (RS), the Full-Flag (FF) will go
low after 256 writes for IDT7280, 512 writes for the IDT7281
and 1024 writes for the IDT7282.
FFFF)
5.074
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