Integrated Device Technology Inc IDT72021L40GB, IDT72021L40JB, IDT72021L50G, IDT72021L50GB, IDT72021L50J Datasheet

Integrated Device Technology, Inc.

MILITARY AND COMMERCIAL TEMPERATURE RANGES DECEMBER 1996

1996 Integrated Device Technology, Inc. DSC-2677/7

5.09 1

FEATURES:

• First-In/First-Out Dual-Port memory

• Bit organization
– IDT72021—1K x 9
– IDT72031—2K x 9
– IDT72041—4K x 9

• Ultra high speed
– IDT72021—25ns access time
– IDT72031—35ns access time
– IDT72041—35ns access time

• Easily expandable in word depth and/or width

• Asynchronous and simultaneous read and write

• Functionally equivalent to IDT7202/03/04 with Output
Enable (OE) and Almost Empty/Almost Full Flag (

AEF

)

• Four status flags: Full, Empty, Half-Full (single device
mode), and Almost Empty/Almost Full (7/8 empty or 7/8
full in single device mode)

• Output Enable controls the data output port

• Auto-retransmit capability

• Available in 32-pin DIP and PLCC

• Military product compliant to MIL-STD-883, Class B

• Industrial temperature range (-40

o

C to +85oC) is avail

able, tested to military electrical specifications

DESCRIPTION:

IDT72021/031/041s are high-speed, low-power, dual-port
memory devices commonly known as FIFOs (First-In/First­Out). Data can be written into and read from the memory at
independent rates. The order of information stored and ex­tracted does not change, but the rate of data entering the FIFO
might be different than the rate leaving the FIFO. Unlike a
Static RAM, no address information is required because the
read and write pointers advance sequentially. The IDT72021/
031/041s can perform asynchronous and simultaneous read
and write operations. There are four status flags, (HF, FF, EF,

AEF

) to monitor data overflow and underflow. Output Enable
(OE) is provided to control the flow of data through the output
port. Additional key features are Write (W), Read (R), Retrans­mit (RT), First Load (FL), Expansion In (XI) and Expansion Out
(XO). The IDT72021/031/041s are designed for those appli­cations requiring data control flags and Output Enable (OE) in
multiprocessing and rate buffer applications.

The IDT72021/031/041s are fabricated using IDT’s CMOS
technology. Military grade product is manufactured in compli­ance with the latest version of MIL-STD-883, Class B, for high
reliability systems.

IDT72021
IDT72031
IDT72041

CMOS ASYNCHRONOUS FIFO WITH
RETRANSMIT
1K x 9, 2K x 9, 4K x 9

W

R

XI

2677 drw 01

WRITE

CONTROL

WRITE

POINTER

READ

POINTER

RESET

LOGIC

READ

CONTROL

FLAG

LOGIC

EXPANSION

LOGIC

DATA INPUT

(D

0–D8)

RAM

ARRAY
1024 x 9
2048 x 9
4096 x 9

1
2

DATA OUTPUTS

(Q

0–Q8)

THREE-

STATE

BUFFERS

1024/
2048/

4096

AEF

EF
FF

FL/RT

XO/HF

RS

OE

The IDT logo is a registered trademark of Integrated Device Technology, Inc.
FAST is a trademark of National Semiconductor Co.

FUNCTIONAL BLOCK DIAGRAM

For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.

5.09 2

MILITARY AND COMMERCIAL TEMPERATURE RANGES

IDT72021, IDT72031, IDT72041
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

PIN CONFIGURATIONS

PIN DESCRIPTIONS

Symbol Name I/O Description

D

0–D8 Inputs I Data inputs for 9-bit wide data.

RS

Reset I When RS is set LOW, internal READ and WRITE pointers are set to the first location of the RAM

array. HF and FF go HIGH, and

AEF

and

EF

go LOW. A reset is required before an initial WRITE

after power-up. R and W must be HIGH during RS cycle.

W

Write I When WRITE is LOW, data can be written into the RAM array sequentially, independent of

READ. In order for WRITE to be active, FF must be HIGH. When the FIFO is full (FF-LOW),
the internal WRITE operation is blocked.

R

Read I When READ is LOW, data can be read from the RAM array sequentially, independent of

WRITE. In order for READ to be active, EF must be HIGH. When the FIFO is empty (EF-LOW),
the internal READ operation is blocked. The three-state output buffer is controlled by the read
signal and the external output control

(OE

).

FL/RT

First Load/ I This is a dual-purpose input. In the single device configuration (XI grounded), activating

retransmit (FL/RT-LOW) will set the internal READ pointer to the first location. There is no effect
on the WRITE pointer. R and W must be HIGH before setting FL/RT LOW. Retransmit is not
compatible with depth expansion. In the depth expansion configuration, FL/RT-LOW indicates
the first activated device.

XI

Expansion In I In the single device configuration, XI is grounded. In depth expansion or daisy chain expansion,

XI

is connected to XO (expansion out) of the previous device.

OE

Output Enable I When OE is set HIGH, the data flow through the three-state output buffer is inhibited regardless

of an active READ operation. A read operation does increment the read pointer in this situation.
When OE is set LOW, Q

0-Q8 are still in a HIGH impedance condition if no READ occurs. For

a complete READ operation with data appearing on Q

0-Q8, both

R

and OE should be asserted

LOW.

FF

Full Flag O When FF goes LOW, the device is full and further WRITE operations are inhibited. When

FF

is HIGH, the device is not full.

EF

Empty Flag O When EF goes LOW, the device is empty and further READ operations are inhibited. When

EF

is HIGH, the device is not empty.

AEF

Almost-Empty/ O When

AEF

is LOW, the device is empty to 1/8 full or 7/8 to completely full. When

AEF

is HIGH,

the device is greater than 1/8 full, but less than 7/8 full.

XO/HF

Expansion Out/ O This is a dual purpose output. In the single device configuration (XI grounded), the device is

more than half full when HF is LOW. In the depth expansion configuration (XO connected to

XI

of the next device), a pulse is sent from XO to XI when the last location in the RAM array is

filled.

Q

0–Q8 Outputs O Data outputs for 9-bit wide data.

Retransmit

Almost-Full Flag

Half-Full Flag

2677 tbl 01

PLCC TOP VIEW

DIP TOP VIEW

D

2

5

D

1

6

D

0

7

XI

8

AEF

9

FF

10

Q

0

11

Q

1

12

Q

2

13

D

6

D

7

FL/RT
RS
OE
EF
XO/HF

Q

7

Q

6

29
28
27
26
25
24
23
22
21

4

3 2132 31 30

14 15 16 17 18 19 20

Q3

Q8

GND

GND

R

Q

4

Q5

D3

D8

W

V

CC

VCCD4D5

INDEX

J32-1

2677 drw 03

VCC
D4

D5

D6

D7

FL/RT
RS
OE

XO/HF

EF

Q

7

Q6
Q5

Q4

R

GND

V

CC

W

D

8

D3
D2
D1
D0

XI

AEF

FF

Q

0

Q1
Q2

Q3
Q8

GND

1
2

3
4

5
6
7
8
9
10

11
12
13
14
15
16

32
31

30
29

28
27
26
25
24

23
22
21
20
19
18
17

D32-1

2677 drw 02

5.09 3

MILITARY AND COMMERCIAL TEMPERATURE RANGES

IDT72021, IDT72031, IDT72041
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

RECOMMENDED DC
OPERATING CONDITIONS

Symbol Parameter Min. Typ. Max. Unit

V

CCM Military Supply 4.5 5.0 5.5 V

Voltage

V

CCC Commercial 4.5 5.0 5.5 V

Supply Voltage
GND Supply Voltage 0 0 0 V
V

IH Input High Voltage 2.0 — — V

Commercial
V

IH Input High Voltage 2.2 — — V

Military
V

IL

(1)

Input Low Voltage — — 0.8 V

Commercial and

Military

NOTE: 2677 tbl 05

1. 1.5V undershoots are allowed for 10ns once per cycle.

STATUS FLAG

Number of Words in FIFO

1K 2K 4K

FF AEF HF EF

00 0HLHL

1-127 1-255 1-511 H L H H
128-512 256-1024 512-2048 HHHH
513-896 1025-1792 2049-3584 H H L H

897-1023 1793-2047 3585-4095 H L L H

1024 2048 4096 L L L H

CAPACITANCE (TA = +25°C, f = 1.0 MHz)

Symbol Parameter

(1)

Condition Max. Unit

C

IN Input Capacitance V IN = 0V 10 pF

C

OUT Output Capacitance VOUT = 0V 10 pF

NOTE: 2677 tbl 03

1. These parameters are sampled and not 100% tested.

2677 tbl l 02

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol Rating Com’l. Mil. Unit

V

TERM Terminal Voltage –0.5 to +7.0 –0.5 to +7.0 V

with Respect
to GND

T

A Operating 0 to +70 –55 to +125 °C

Temperature

T

BIAS Temperature –55 to +125 –65 to +135 °C

Under Bias

T

STG Storage –55 to +125 –65 to +155 °C

Temperature

I

OUT DC Output 50 50 mA

Current

NOTE: 2677 tbl 04

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliabilty.

5.09 4

MILITARY AND COMMERCIAL TEMPERATURE RANGES

IDT72021, IDT72031, IDT72041
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

DC ELECTRICAL CHARACTERISTICS — IDT72021

(Commercial: VCC = 5.0V±10%, TA = 0°C to +70°C; Military: V CC = 5V±10%, TA = –55°C to +125°C)

IDT72021 IDT72021 IDT72021 IDT72021

Commercial Military Commercial Military

t

A =25,35ns tA =30,40ns tA =50ns tA =50ns

Symbol Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Unit

I

LI

(1)

Input Leakage Current –1 — 1 –10 — 10 –1 — 1 –10 — 10 µA
(Any Input)

I

LO

(2)

Output Leakage Current –10 — 10 –10 — 10 –10 — 10 –10 — 10 µA

V

OH Output Logic “1” Voltage 2.4 — — 2.4 — — 2.4 — — 2.4 — — V

I

OH = –2mA

V

OL Output Logic “0” Voltage — — 0.4 — — 0.4 — — 0.4 — — 0.4 V

I

OL = 8mA

I

CC1

(3,4)

Active Power Supply — — 120 — — 140 — 50 80 — 70 100 mA
Current

I

CC2

(3)

Standby Current — — 12 — — 20 — 5 8 — 8 15 mA
(R = W = RS = FL/RT = V

IH)

I

CC3

(3)

Power Down Current — — 500 — — 900 — — 500 — — 900 µA
(All Input = V

CC – 0.2V)

2677 tbl 06

DC ELECTRICAL CHARACTERISTICS — IDT72031, IDT72041

(Commercial: VCC = 5.0V±10%, TA = 0°C to +70°C; Military: VCC = 5V±10%, TA = –55°C to +125°C)

IDT72031 IDT72031

IDT72041 IDT72041
Commercial Military
t

A =35,50ns tA =40,50ns

Symbol Parameter Min. Typ. Max. Min. Typ. Max. Unit

I

LI

(1)

Input Leakage Current (Any Input) –1 — 1 –10 — 10 µA

I

LO

(2)

Output Leakage Current –10 — 10 –10 — 10 µA

V

OH Output Logic “1” Voltage IOUT = –2mA 2.4 — — 2.4 — — V

V

OL Output Logic “0” Voltage IOUT = 8mA — — 0.4 — — 0.4 V

I

CC1

(3,5)

Active Power Supply Current — 75 120 — 100 150 mA

I

CC2

(3)

Standby Current (R = W = RS = FL/RT = VIH)—812—1225mA

I

CC3

(3)

Power Down Current (All Input = VCC – 0.2V) — — 2 — — 4 mA

NOTES: 2677 tbl 07

1. Measurements with 0.4 ≤ VIN ≤ VCC.

2.R ≥ V

IH, 0.4 ≤ VOUT ≤ VCC.

3. I

CC measurements are made with

OE

= HIGH.

4. Tested at f = 20MHz.

5. Tested at f = 15.3 MHz.

5.09 5

MILITARY AND COMMERCIAL TEMPERATURE RANGES

IDT72021, IDT72031, IDT72041
CMOS ASYNCHRONOUS FIFO WITH RETRANSMIT 1K x 9, 2K x 9, 4K x 9

AC ELECTRICAL CHARACTERISTICS — IDT72021

(1)

(Commercial: VCC = 5.0V±10%, TA = 0°C to +70°C; Military: VCC = 5V±10%, TA = –55 °C to +125°C)

Com’l Mil. Com’l Mil. Com’l & Mil.

72021L25 72021L30 72021L35 72021L40 72021L50

Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit

f

S Shift Frequency — 28.5 — 25 — 22.2 — 20 — 15 MHz

t

RC

R

Cycle Time 35 — 40 — 45 — 50 — 65 — ns

t

A Access Time — 25 — 30 — 35 — 40 — 50 ns

t

RR

R

Recovery Time 10 — 10 — 10 — 10 — 15 — ns

t

RPW

R

Pulse Width

(2)

25 — 30 — 35 — 40 — 50 — ns

t

RLZ

R

Pulse LOW to Data Bus at Low-Z

(3)

5—5—5 — 5—10—ns

t

WLZ

W

Pulse HIGH to Data Bus at Low-Z

(3,4)

5—5—5 — 5—5—ns

t

DV Data Valid from

R

Pulse HIGH 5 — 5 — 5 — 5 — 5 — ns

t

RHZ

R

Pulse HIGH to Data Bus at High-Z

(3)

— 18 — 20 — 20 — 25 — 30 ns

t

WC

W

Cycle Time 35 — 40 — 45 — 50 — 65 — ns

t

WPW

W

Pulse Width

(2)

25 — 30 — 35 — 40 — 50 — ns

t

WR

W

Recovery Time 10 — 10 — 10 — 10 — 15 — ns

t

DS Data Set-up Time 15 — 18 — 18 — 20 — 30 — ns

t

DH Data Hold Time 0 — 0 — 0 — 0 — 5 — ns

t

RSC

RS

Cycle Time 35 — 40 — 45 — 50 — 65 — ns

t

RS

RS

Pulse Width

(2)

25 — 30 — 35 — 40 — 50 — ns

t

RSS

RS

Set-up Time 25 — 30 — 35 — 40 — 50 — ns

t

RSR

RS

Recovery Time 10 — 10 — 10 — 10 — 15 — ns

t

RTC

RT

Cycle Time 35 — 40 — 45 — 50 — 65 — ns

t

RT

RT

Pulse Width

(2)

25 — 30 — 35 — 40 — 50 — ns

t

RTR

RT

Recovery Time 10 — 10 — 10 — 10 — 15 — ns

t

RSF1

RS

to EF and

AEF

LOW — 35 — 40 — 45 — 50 — 65 ns

t

RSF2

RS

to HF and FF HIGH — 35 — 40 — 45 — 50 — 65 ns

t

REF

R

LOW to EF LOW — 25 — 30 — 30 — 35 — 45 ns

t

RFF

R

HIGH to FF HIGH — 25 — 30 — 30 — 35 — 45 ns

t

RPE

R

Pulse Width After EF HIGH 25 — 30 — 35 — 40 — 50 — ns

t

WEF

W

HIGH to EF HIGH — 25 — 30 — 30 — 35 — 45 ns

t

WFF

W

LOW to EF LOW — 25 — 30 — 30 — 35 — 45 ns

t

WHF

W

LOW to HF LOW — 35 — 40 — 45 — 50 — 65 ns

t

RHF

R

HIGH to HF HIGH — 35 — 40 — 45 — 50 — 65 ns

t

WPF

W

Pulse Width after FF HIGH 25 — 30 — 35 — 40 — 50 — n s

t

RF

R

HIGH to Transitioning

AEF

— 35 — 40 — 45 — 50 — 65 ns

t

WF

W

LOW to Transitioning

AEF

— 35 — 40 — 45 — 50 — 65 ns

t

OEHZ

OE

HIGH to High-Z (Disable)

(3)

0 12 0 15 0 17 0 20 0 25 ns

t

OELZ

OE

LOW to Low-Z (Enable)

(3)

0 12 0 15 0 17 0 20 0 25 ns

t

AOE

OE

LOW Data Valid (Q0–Q8) — 15 — 18 — 20 — 25 — 30 ns

NOTES: 2677 tbl 08

1. Timings referenced as in AC Test Conditions.

2. Pulse widths less than minimum value are not allowed.

3. Values guaranteed by design, not currently tested.

4. Only applies to read data flow-through mode.