Integrated Device Technology Inc IDT71T024L150PZI, IDT71T024L200PZI Datasheet

Integrated Device Technology, Inc.

LOW POWER 2V CMOS SRAM
1 MEG (128K x 8-BIT)

ADVANCE

INFORMATION

IDT71T024

FEATURES:

• 128K x 8 Organization

• Wide Operating Voltage Range: 1.8V to 2.7V

• Speed Grades: 150ns, 200ns

• Low Operating Power: 11mA (max)

• Low Standby Power: 5µA (max)

• Low-Voltage Data Retention: 1.5V (min)

• Available in 32-pin, 13.4mm x 8mm Type I TSOP pack­age

FUNCTIONAL BLOCK DIAGRAM

A0

•

•

•

A16

ADDRESS
DECODER

DESCRIPTION:

The IDT71T024 is a 1,048,576-bit very low-power Static
RAM organized as 128K x 8. It is fabricated using IDT’s high­reliability CMOS technology. This state-of-the-art technology,
combined with innovative circuit design techniques, provides
a cost-effective solution for low-power memory needs. It uses
a 6-transistor memory cell.

Operation is from a single extended-range 2.5V supply.
This extended supply range makes the device ideally suited
for unregulated battery-powered applications. Fully static
asynchronous circuitry is used, requiring no clocks or refresh
for operation.

The IDT71T024 is packaged in a JEDEC standard 32-pin
TSOP Type I.

•

•

1,048,576-BIT

MEMORY ARRAY

•

I/O0 – I/O7

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

•

8

WE

OE

CS1

CS2

8

CONTROL
LOGIC

I/O CONTROL

8

3779 drw 01

INDUSTRIAL AND COMMERCIAL TEMPERATURE RANGES MAY 1997

1997 Integrated Device Technology, Inc. DSC-3779/1

1

IDT71T024
LOW POWER 2V CMOS STATIC RAM 1 MEG (128K x 8-BIT) COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES

PIN CONFIGURATIONS

11

1

A

A9

2

A8

3

A13

4
5

WE

CS2

6

15

7

A

VDD

8

NC

9

A16

10

A14

11

A12

12
13 20

A7

14 19

A6

15 18

A5

16A4 17

TSOP (I)

TOP VIEW

TRUTH TABLE

CS1

CS2

CS1

(1)

OEOEWEWE I/O0-I/O7 Function

H X X X High-Z Deselected - Standby
X L X X High-Z Deselected - Standby

L H L H DATA
L H X L DATA

OUT Read

IN Write

L H H H High-Z Outputs Disabled

NOTE: 3779 tbl 02

1.H = VIH, L = VIL, X = Don't care.

TSOP

PIN DESCRIPTIONS

A0 – A16 Address Inputs Input

CS1

CS2 Chip Select Input

WE
OE

I/O

0 - I/O7 Data Input/Output I/O

V

DD Power Pwr

V

SS Ground Gnd

OE

32

A10

31

CS1

30
29
28
27
26
25
24
23
22
21

I/O
I/O6
I/O5
I/O4
I/O3
VSS
I/O2
I/O1
I/O0
A0
A1
A2
A3

3779 drw 02

7

Chip Select Input

Write Enable Input
Output Enable Input

3779 tbl 01

CAPACITANCE

(TA = +25°C, f = 1.0MHz)

Symbol Parameter

IN Input Capacitance VIN = 1dV 6 pF

C

I/O I/O Capacitance VOUT = 1dV 7 pF

C

NOTE: 3779 tbl 06

1. This parameter is guaranteed by device characterization, but not prod-

uction tested.

(1)

Conditions Max. Unit

2

IDT71T024
LOW POWER 2V CMOS STATIC RAM 1 MEG (128K x 8-BIT) COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES

ABSOLUTE MAXIMUM RATINGS

Symbol Rating Com’l. and Ind'l. Unit

(2)

TERM

V

VTERM

TBIAS Temperature Under Bias –55 to +125 °C

STG Storage Temperature –55 to +125 °C

T

P

OUT DC Output Current 20 mA

I

NOTES: 3779 tbl 03

1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.

2. V

3. Input, Output,and I/O terminals; 3.6V maximum.

Terminal Voltage with –0.5 to +3.6 V
Respect to V

(3)

Terminal Voltage with –0.5 to VDD+0.5V V
Respect to V

T Power Dissipation 1.0 W

DD terminals only.

SS

SS

(1)

RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE

Grade Temperature VSS VDD

Commercial 0°C to +70°C 0V 1.8V to 2.7V
Industrial -40°C to +85°C 0V 1.8V to 2.7V

3779 tbl 04

RECOMMENDED DC OPERATING
CONDITIONS

Symbol Parameter Min. Max. Unit

VDD Supply Voltage 1.8 2.7 V
VSS Ground 0 0 V

VIH Input High Voltage VDD x 0.7 VDD + 0.3

V

IL Input Low Voltage –0.3

NOTE: 3779 tbl 05

1. VIH (max.) = VDD + 1.5V for pulse width less than 5ns, once per cycle.

2. V

IL (min.) = –1.5V for pulse width less than 5ns, once per cycle.

(2)

VDD x 0.3 V

(1)

V

DC ELECTRICAL CHARACTERISTICS

VDD = 1.8V to 2.7V, Commercial and Industrial Temperature Ranges

Symbol Parameter Test Conditions Min. Max. Unit

LI| Input Leakage Current VDD = Max., VIN = VSS to VDD —1µA

|I

LO| Output Leakage Current VDD = Max.,

|I

OH Output High Voltage VDD = 1.8 to 2.7V IOH = –0.3mA VDD - 0.2 — V

V

DD = 2.3 to 2.7V IOH = –2mA 1.7 —

V

OL Output Low Voltage VDD = 1.8 to 2.7V IOL = 0.3mA — 0.2 V

V

DD = 2.3 to 2.7V IOL = 2mA — 0.4

V

CS

= VIH, VOUT = VSS to VDD —1µA

3779 tbl 07

DC ELECTRICAL CHARACTERISTICS

(1, 2)

VDD = 1.8 to 2.7V, VLC = 0.2V, VHC = VDD–0.2V, Commercial and Industrial Temperature Ranges

Symbol Parameter Test Conditions Typ.

CC2 Dynamic Operating Current

I

CC Static Operating Current

I

ISB1 Standby Supply Current

CS1

= VLC, CS2 = VHC, Outputs Open, -70 ns — 11 mA

V

DD = 2.7V, f = fMAX

CS1

= VLC, CS2 = VHC, Outputs Open, — 4 mA

WE

= V

HC, VDD = 2.7V, f = 0

CS1

and CS2 = VHC, or CS2 = VLC, -40 to 85°C— 10 µA

Outputs Open, V

(3)

(4)

DD = 2.7V 0 to 70°C— 5

-100 ns — 9

40°C—2
25°C—1

NOTES: 3778 tbl 08

1. All values are maximum guaranteed values.

2. Input low and high voltage levels are 0.2V and V

MAX = 1/tRC (all address inputs are cycling at fMAX).

3. f

4. f = 0 means no address input lines are changing

5. Typical conditions are V

DD = 2.0V and specified temperature.

DD-0.2V respectively for all tests.

.

(5)

Max. Unit

3