Integrated Device Technology Inc. IDT71T016 User Manual

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CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9
Integrated Device Technology, Inc.
FEATURES:
• First-In/First-Out Dual-Port memory
• 2048 x 9 organization (IDT7203)
• 4096 x 9 organization (IDT7204)
• 8192 x 9 organization (IDT7205)
• 16384 x 9 organization (IDT7206)
• Low power consumption — Active: 770mW (max.) — Power-down: 44mW (max.)
• Asynchronous and simultaneous read and write
• Fully expandable in both word depth and width
• Pin and functionally compatible with IDT720X family
• Status Flags: Empty, Half-Full, Full
• Retransmit capability
• High-performance CMOS technology
• Military product compliant to MIL-STD-883, Class B
• Standard Military Drawing for #5962-88669 (IDT7203), 5962-89567 (IDT7203), and 5962-89568 (IDT7204) are listed on this function
• Industrial temperature range (-40
able, tested to military electrical specifications
.
o
C to +85oC) is avail-
IDT7203 IDT7204 IDT7205 IDT7206
DESCRIPTION:
The IDT7203/7204/7205/7206 are dual-port memory buff­ers with internal pointers that load and empty data on a first­in/first-out basis. The device uses Full and Empty flags to prevent data overflow and underflow and expansion logic to allow for unlimited expansion capability in both word size and depth.
Data is toggled in and out of the device through the use of the Write (W) and Read (R) pins.
The devices 9-bit width provides a bit for a control or parity at the user’s option. It also features a Retransmit (RT) capa­bility that allows the read pointer to be reset to its initial position when RT is pulsed LOW. A Half-Full Flag is available in the single device and width expansion modes.
The IDT7203/7204/7205/7206 are fabricated using IDT’s high-speed CMOS technology. They are designed for appli­cations requiring asynchronous and simultaneous read/writes in multiprocessing, rate buffering, and other applications.
Military grade product is manufactured in compliance with the latest revision of MIL-STD-883, Class B.
FUNCTIONAL BLOCK DIAGRAM
DATA INPUTS
0(D –D8)
WRITE
CONTROL
WRITE
POINTER
THREE­STATE BUFFERS
R
XI
READ
CONTROL
FLAG
LOGIC
EXPANSION
LOGIC
RAM ARRAY
2048 x 9 4096 x 9 8192 x 9
16384 x 9
DATA OUTPUTS
0(Q –Q8)
EF FF
XO/HF
READ
POINTER
RS
RESET
LOGIC
FL/RT
2661 drw 01
The IDT logo is a registered trademark of Integrated Device Techology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES DECEMBER 1996
1996 Integrated Device Technology, Inc. DSC-2661/9
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
5.04 1
IDT7203/7204/7205/7206 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
W
D D
D
D
D
XI
FF
Q
Q Q Q Q
GND
1 2
8
3
3
4
2
1
0
0
1
2
3
8
5 6 7 8
9 10 11 12
13 14
P28-1 P28-2 D28-1 D28-3
SO28-3
28 27
26 25 24 23 22 21 20 19 18 17 16 15
2661 drw 02a
Vcc
D
4
D
5 6
D D
7
FL/RT RS EF
XO/HF
Q
7 6
Q
5
Q Q
4
R
DIP
TOP VIEW
NOTES:
1. The THINDIPs P28-2 and D28-3 are only available for the 7203/7204/
7205.
2. The small outline package SO28-3 is only available for the 7204.
3. Consult factory for CERPACK pinout.
INDEX
2
D
D
1
0
D
XI
FF
Q
0
1
Q
NC
Q
2
8
D3D
432
5 6 7 8 9 10 11 12 13
1415161718
3
8
Q
Q
PLCC/LCC TOP VIEW
NC
W
1
J32-1
&
L32-1
GND
NC
Vcc
32
R
4
D
31
19
Q
4
5
D
30
29 28 27 26 25 24 23 22 21
20 5
Q
2661 drw 02b
D
6
D
7
NC
FL/RT RS
EF
XO/HF
Q
7
Q
6
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Rating Commercial Military Unit
V
TERM Terminal –0.5 to + 7.0 –0.5 to +7.0 V
Voltage with Respect to GND
T
A Operating 0 to +70 –55 to +125 ° C
Temperature
T
BIAS Temperature –55 to +125 –65 to +135 ° C
Under Bias
T
STG Storage –55 to + 125 –65 to +155 ° C
Temperature
I
OUT DC Output 50 50 mA
Current
NOTE: 2661 tbl 01
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT­INGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
Symbol Parameter Min. Typ. Max. Unit
V
CCM Military Supply 4.5 5.0 5.5 V
Voltage
CCC Commercial Supply 4.5 5.0 5.5 V
V
Voltage
GND Supply Voltage 0 0 0 V
(1)
V
IH
V
IH
V
IL
NOTE: 2661 tbl 02
1. 1.5V undershoots are allowed for 10ns once per cycle.
Input High Voltage 2.0 V Commercial
(1)
Input High Voltage 2.2 V Military
(1)
Input Low Voltage 0.8 V Commercial and Military
5.04 2
IDT7203/7204/7205/7206 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS FOR THE 7203 AND 7204
(Commercial: VCC = 5.0V±10%, TA = 0°C to +70°C; Military: VCC = 5.0V±10%, TA = –55°C to +125°C)
IDT7203/7204 IDT7203/7204
Commercial Military
tA = 12, 15, 20, 25, 35, 50 ns tA = 20, 30, 40, 50, 65, 80, 120 ns
Symbol Parameter Min. Typ. Max. Min. Typ. Max. Unit
(2)
LI
I
(3)
LO
I
OH Output Logic “1” Voltage IOH = –2mA 2.4 2.4 V
V
OL Output Logic “0” Voltage IOL = 8mA 0.4 0.4 V
V
(4)
CC1
I
(4)
CC2
I
CC3(L)
I
CC3(S)
I
NOTES: 2661 tbl 03
1. Speed grades 65, 80, and 120ns are only available in the ceramic DIP.
2. Measurements with 0.4 V
3. R V
CC measurements are made with outputs open (only capacitive loading).
4. I
5. Tested at f = 20MHz.
Input Leakage Current (Any Input) –1 1 –1 1 µA Output Leakage Current –10 10 –10 10 µA
Active Power Supply Current 120
(5)
150
Standby Current (R=W=RS=FL/RT=VIH)——12— —25mA
(4)
Power Down Current (All Input = VCC - 0.2V) 2 4 mA
(4)
Power Down Current (All Input = VCC - 0.2V) 8 12 mA
IH, 0.4 VOUT VCC.
IN VCC.
(1)
(5)
mA
DC ELECTRICAL CHARACTERISTICS FOR THE 7205 AND 7206
(Commercial: VCC = 5.0V±10%, TA = 0°C to +70°C; Military: VCC = 5.0V±10%, TA = –55°C to +125°C)
IDT7205/7206 IDT7205/7206
Commercial Military
t
A = 15, 20, 25, 35, 50 ns tA = 20, 30, 50 ns
Symbol Parameter Min. Typ. Max. Min. Typ. Max. Unit
(1)
LI
I
(2)
LO
I
OH Output Logic “1” Voltage IOH = –2mA 2.4 2.4 V
V
OL Output Logic “0” Voltage IOL = 8mA 0.4 0.4 V
V
(3)
CC1
I
(3)
CC2
I
CC3(L)
I
NOTES: 2661 tbl 04
1. Measurements with 0.4 VIN VCC.
2. R V
CC measurements are made with outputs open (only capacitive loading).
3. I
4. Tested at f = 20MHz.
Input Leakage Current (Any Input) –1 1 –1 1 µA Output Leakage Current –10 10 –10 10 µA
Active Power Supply Current 120
(4)
150
(4)
Standby Current (R=W=RS=FL/RT=VIH)——12— —25mA
(3)
Power Down Current (All Input = VCC - 0.2V) 8 12 mA
IH, 0.4 VOUT VCC.
mA
5.04 3
IDT7203/7204/7205/7206 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS
(1)
(Commercial: VCC = 5V ± 10%, TA = 0°C to +70°C; Military: VCC = 5V ± 10%, TA = –55°C to +125°C)
Commercial Com'l & Mil. Com'l Military Com'l
7203S/L12 7203S/L15 7203S/L20 7203S/L25 7203S/L30 7203S/L35 7204S/L12 7204S/L15 7204S/L20 7204S/L25 7204S/L30 7204S/L35
7205L15 7205L20 7205L25 7205L30 7205L35 7206L15 7206L20 7206L25 7206L30 7206L35
Symbol Parameters Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
f
S Shift Frequency 50 40 33.3 28.5 25 22.2 MHz RC Read Cycle Time 20 25 30 35 40 45 ns
t
A Access Time 12 15 20 25 30 35 ns
t t
RR Read Recovery Time 8 10 10 10 10 10 ns RPW Read Pulse Width
t t
RLZ Read LOW to Data Bus LOW WLZ Write HIGH to Data Bus Low-Z
t t
DV Data Valid from Read HIGH 5 5 5 5 5 5 ns RHZ Read HIGH to Data Bus High-Z
t t
WC Write Cycle Time 20 25 30 35 40 45 ns WPW Write Pulse Width
t t
WR Write Recovery Time 8 10 10 10 10 10 ns DS Data Set-up Time 9 11 12 15 18 18 ns
t
DH Data Hold Time 0 0 0 0 0 0 ns
t t
RSC Reset Cycle Time 20 25 30 35 40 45 ns RS Reset Pulse Width
t t
RSS Reset Set-up Time
t
RTR Reset Recovery Time 8 10 10 10 10 10 ns RTC Retransmit Cycle Time 20 25 30 35 40 45 ns
t
RT Retransmit Pulse Width
t
RTS Retransmit Set-up Time
t t
RSR Retransmit Recovery Time 8 10 10 10 10 10 ns
t
EFL Reset to HFH, tFFH Reset to
t
RTF Retransmit LOW to Flags Valid 20 25 30 35 40 45 ns
t t
REF Read LOW to RFF Read HIGH to
t t
RPE Read Pulse Width after WEF Write HIGH to
t t
WFF Write LOW to WHF Write LOW to
t
RHF Read HIGH to
t t
WPF Write Pulse Width after XOL Read/Write LOW to
t t
XOH Read/Write HIGH to XI
t t
XIR
t
XIS
NOTES: 2661 tbl 05
1. Timings referenced as in AC Test Conditions.
2. Pulse widths less than minimum are not allowed.
3. Values guaranteed by design, not currently tested.
4. Only applies to read data flow-through mode.
XI XI XI
EF HF
Pulse Width Recovery Time 8 10 10 10 10 10 ns Set-up Time 8 10 10 10 10 15 ns
(2)
(3)
(2)
(2)
(3)
(2)
(3)
12 15 20 25 30 35 ns
3—5—5 — 5—5—5—ns
(3, 4)
3—5—5 — 5—5—10—ns
(3)
12 15 15 18 20 20 ns
12 15 20 25 30 35 ns
12 15 20 25 30 35 ns 12 15 20 25 30 35 ns
12 15 20 25 30 35 ns 12 15 20 25 30 35 ns
LOW 12 25 30 35 40 45 ns and FF HIGH 17 25 30 35 40 45 ns
EF
LOW 12 15 20 25 30 30 ns
FF
HIGH 14 15 20 25 30 30 ns
EF
HIGH 12 15 20 25 30 35 ns
EF
HIGH 12 15 20 25 30 30 ns
FF
LOW 14 15 20 25 30 30 ns
HF
Flag LOW 17 25 30 35 40 45 ns
HF
Flag HIGH 17 25 30 35 40 45 ns
FF
HIGH 12 15 20 25 30 35 ns
XO
LOW 12 15 20 25 30 35 ns
XO
HIGH 12 15 20 25 30 35 ns
(2)
12 15 20 25 30 35 ns
5.04 4
IDT7203/7204/7205/7206 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS
(1)
(Continued)
(Commercial: VCC = 5V ± 10%, TA = 0°C to +70°C; Military: VCC = 5V ± 10%, TA = –55°C to +125°C)
Military Com'l & Mil. Military
7203S/L40 7203S/L50 7203S/L65 7203S/L80 7203S/L120 7204S/L40 7204S/L50 7204S/L65 7204S/L80 7204S/L120
7205L50 7206L50
Symbol Parameters Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
f
S Shift Frequency 20 15 12.5 10 7 MHz RC Read Cycle Time 50 65 80 100 140 ns
t t
A Access Time 40 50 65 80 120 ns RR Read Recovery Time 10 15 15 20 20 ns
t
RPW Read Pulse Width
t t
RLZ Read LOW to Data Bus LOW WLZ Write HIGH to Data Bus Low-Z
t t
DV Data Valid from Read HIGH 5 5 5 5 5 ns RHZ Read HIGH to Data Bus High-Z
t t
WC Write Cycle Time 50 65 80 100 140 ns WPW Write Pulse Width
t t
WR Write Recovery Time 10 15 15 20 20 ns DS Data Set-up Time 20 30 30 40 40 ns
t
DH Data Hold Time 0 5 10 10 10 ns
t t
RSC Reset Cycle Time 50 65 80 100 140 ns RS Reset Pulse Width
t t
RSS Reset Set-up Time
t
RSR Reset Recovery Time 10 15 15 20 20 ns RTC Retransmit Cycle Time 50 65 80 100 140 ns
t
RT Retransmit Pulse Width
t
RTS Retransmit Set-up Time
t t
RSR Retransmit Recovery Time 10 15 15 20 20 ns
t
EFL Reset to HFH, tFFH Reset to
t t
RTF Retransmit LOW to Flags Valid 50 65 80 100 140 ns REF Read LOW to
t
RFF Read HIGH to
t t
RPE Read Pulse Width after WEF Write HIGH to
t t
WFF Write LOW to WHF Write LOW to
t
RHF Read HIGH to
t t
WPF Write Pulse Width after XOL Read/Write LOW to
t t
XOH Read/Write HIGH to XI
t t
XIR
t
XIS
NOTES: 2661 tbl 06
1. Timings referenced as in AC Test Conditions.
2. Speed grades 65, 80, and 120ns are only available in the ceramic DIP.
3. Pulse widths less than minimum are not allowed.
4. Values guaranteed by design, not currently tested.
5. Only applies to read data flow-through mode.
XI XI XI
EF HF
Pulse Width Recovery Time 10 10 10 10 10 ns Set-up Time 15 15 15 15 15 ns
(3)
(4)
(4, 5)
(4)
(3)
(3)
(4)
(3)
(4)
40 50 65 80 120 ns
5 10 10 10 10 ns
10 15 15 20 20 ns
25 30 30 30 35 ns
40 50 65 80 120 ns
40 50 65 80 120 ns 40 50 65 80 120 ns
40 50 65 80 120 ns 40 50 65 80 120 ns
LOW 50 65 80 100 140 ns
and FF HIGH 50 65 80 100 140 ns
EF
Flag LOW 35 45 60 60 60 ns
FF
HIGH 35 45 60 60 60 ns
EF
HIGH 40 50 65 80 120 ns
EF
HIGH 35 45 60 60 60 ns
FF
LOW 35 45 60 60 60 ns
HF
LOW 50 65 80 100 140 ns
HF
HIGH 50 65 80 100 140 ns
FF
HIGH 40 50 65 80 120 ns
XO
LOW 40 50 65 80 120 ns
XO
HIGH 40 50 65 80 120 ns
(3)
40 50 65 80 120 ns
(2)
5.04 5
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