Integrated Device Technology Inc IDT71L024L100PZ, IDT71L024L100PZI, IDT71L024L70PZ, IDT71L024L70PZI Datasheet
Integrated Device Technology, Inc.
LOW POWER 3V CMOS SRAM
1 MEG (128K x 8-BIT)
ADVANCE
INFORMATION
IDT71L024
FEATURES:
• 128K x 8 Organization
• Wide Operating Voltage Range: 2.7V to 3.6V
• Speed Grades: 70ns, 100ns
• Low Operating Power: 25mA (max)
• Low Standby Power: 5µA (max)
• Low-Voltage Data Retention: 1.5V (min)
• Available in 32-pin, 13.4mm x 8mm Type I TSOP
package
FUNCTIONAL BLOCK DIAGRAM
A0
•
•
•
A16
ADDRESS
DECODER
DESCRIPTION:
The IDT71L024 is a 1,048,576-bit very low-power Static
RAM organized as 128K x 8. It is fabricated using IDT’s highreliability CMOS technology. This state-of-the-art technology,
combined with innovative circuit design techniques, provides
a cost-effective solution for low-power memory needs. It uses
a 6-transistor memory cell.
All input and output signals of the IDT71L024 are LVTTLcompatible and operation is from a single extended-range
3.3V supply. This extended supply range makes the device
ideally suited for unregulated battery-powered applications.
Fully static asynchronous circuitry is used, requiring no clocks
or refresh for operation.
The IDT71L024 is packaged in a JEDEC standard 32-pin
TSOP Type I.
•
•
1,048,576-BIT
MEMORY ARRAY
•
I/O0 – I/O7
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
•
8
WE
OE
CS1
CS2
8
CONTROL
LOGIC
I/O CONTROL
8
3778 drw 01
INDUSTRIAL AND COMMERCIAL TEMPERATURE RANGES MAY 1997
1997 Integrated Device Technology, Inc. DSC-3967/-
1
IDT71L024
LOW POWER 3V CMOS STATIC RAM 1 MEG (128K x 8-BIT) COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
11
A
A9
A8
A13
WE
CS2
A
VDD
NC
A16
A14
A12
A7
A6
A5
1
2
3
4
5
6
15
7
8
9
10
11
12
13 20
14 19
15 18
16A4 17
TSOP (I)
TSOP
TOP VIEW
32
31
30
29
28
27
26
25
24
23
22
21
3778 drw 02
OE
A10
CS1
I/O
I/O6
I/O5
I/O4
I/O3
VSS
I/O2
I/O1
I/O0
A0
A1
A2
A3
7
TRUTH TABLE
CS1
CS2
CS1
(1)
OEOEWEWE I/O0-I/O7 Function
H X X X High-Z Deselected - Standby
X L X X High-Z Deselected - Standby
L H L H DATA
L H X L DATA
OUT Read
IN Write
L H H H High-Z Outputs Disabled
NOTE: 3778 tbl 02
1.H = VIH, L = VIL, X = Don't care.
PIN DESCRIPTIONS
A0 – A16 Address Inputs Input
CS1
Chip Select Input
CS2 Chip Select Input
WE
OE
I/O
0 - I/O7 Data Input/Output I/O
V
DD Power Pwr
V
SS Ground Gnd
Write Enable Input
Output Enable Input
3778 tbl 01
CAPACITANCE
(TA = +25°C, f = 1.0MHz)
Symbol Parameter
IN Input Capacitance VIN = 3dV 6 pF
C
I/O I/O Capacitance VOUT = 3dV 7 pF
C
NOTE: 3778 tbl 06
1. This parameter is guaranteed by device characterization, but not production tested.
(1)
Conditions Max. Unit
2
IDT71L024
LOW POWER 3V CMOS STATIC RAM 1 MEG (128K x 8-BIT) COMMERCIAL AND INDUSTRIAL TEMPERATURE RANGES
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Rating Com’l. and Ind'l. Unit
(2)
TERM
V
VTERM
Terminal Voltage with –0.5 to +4.6 V
Respect to V
(3)
Terminal Voltage with –0.5 to VDD+0.5V V
Respect to V
SS
SS
TBIAS Temperature Under Bias –55 to +125 °C
STG Storage Temperature –55 to +125 °C
T
T Power Dissipation 1.0 W
P
OUT DC Output Current 20 mA
I
NOTES: 3778 tbl 03
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. V
DD terminals only.
3. Input, Output,and I/O terminals; 4.6V maximum.
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade Temperature VSS VDD
Commercial 0°C to +70°C 0V 2.7V to 3.6V
Industrial -40°C to +85°C 0V 2.7V to 3.6V
3778 tbl 04
RECOMMENDED DC OPERATING
CONDITIONS
Symbol Parameter Min. Typ. Max. Unit
VDD Supply Voltage 2.7 3.0 3.6 V
VSS Ground 0 0 0 V
VIH Input High Voltage 2.0 — VDD+0.3
V
IL Input Low Voltage –0.3
NOTE: 3778 tbl 05
1. VIH (max.) = VDD + 1.5V for pulse width less than 5ns, once per cycle.
2. V
IL (min.) = –1.5V for pulse width less than 5ns, once per cycle.
(2)
— 0.8 V
(1)
V
DC ELECTRICAL CHARACTERISTICS
VDD = 2.7V to 3.6V, Commercial and Industrial Temperature Ranges
Symbol Parameter Test Conditions Min. Max. Unit
LI| Input Leakage Current VDD = Max., VIN = VSS to VDD — 1 µA
|I
LO| Output Leakage Current VDD = Max.,
|I
OH Output High Voltage IOH = –1mA, VDD = Min. 2.4 — V
V
OL Output Low Voltage IOL = 2mA, VDD = Min. — 0.4 V
V
DC ELECTRICAL CHARACTERISTICS
VDD = 2.7 to 3.6V, VLC = 0.2V, VHC = VDD–0.2V, Commercial and Industrial Temperature Ranges
Symbol Parameter Test Conditions Typ.
CC2 Dynamic Operating Current
I
CC Static Operating Current
I
ISB1 Standby Supply Current
NOTES: 3778 tbl 08
1. All values are maximum guaranteed values.
2. Input low and high voltage levels are 0.2V and V
MAX = 1/tRC (all address inputs are cycling at fMAX).
3. f
4. f = 0 means no address input lines are changing
5. Typical conditions are VDD = 3.0V and specified temperature.
CS1
= VLC, CS2 = VHC, Outputs Open, -70 ns — 25 mA
V
DD = 3.6V, f = fMAX
CS1
= VLC, CS2 = VHC, Outputs Open, — 5 mA
WE
= V
HC, VDD = 3.6V, f = 0
CS1
and CS2 = VHC, or CS2 = VLC, -40 to 85°C— 10 µA
Outputs Open, V
DD-0.2V respectively for all tests.
.
CS
= VIH, VOUT = VSS to VDD — 1 µA
(1, 2)
(5)
(3)
(4)
DD = 3.6V 0 to 70°C— 5
-100 ns — 18
40°C—2
25°C—1
3778 tbl 07
Max. Unit
3
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