Integrated Device Technology, Inc.
BiCMOS STATIC RAM
64K (8K x 8-BIT)
CACHE-TAG RAM
IDT71B74
FEATURES:
• High-speed address to MATCH comparison time
— Commercial: 8/10/12/15/20ns (max.)
• High-speed address access time
— Commercial: 8/10/12/15/20ns (max.)
• High-speed chip select access time
— Commercial: 6/7/8/10ns (max.)
• Power-ON Reset Capability
• Low power consumption
— 830mW (typ.) for 12ns parts
— 880mW (typ.) for 10ns parts
— 920mW (typ.) for 8ns parts
• Produced with advanced BiCMOS high-performance
technology
• Input and output directly TTL-compatible
• Standard 28-pin plastic DIP and 28-pin SOJ (300 mil)
DESCRIPTION:
The IDT71B74 is a high-speed cache address comparator
subsystem consisting of a 65,536-bit static RAM organized as
8K x 8 and an 8-bit comparator. A single IDT71B74 can map
8K cache words into a 2 megabyte address space by using the
21 bits of address organized with the 13 LSBs for the cache
address bits and the 8 higher bits for cache data bits. Two
IDT71B74s can be combined to provide 29 bits of address
comparison, etc. The IDT71B74 also provides a single RAM
clear control, which clears all words in the internal RAM to zero
when activated. This allows the tag bits for all locations to be
cleared at power-on or system-reset, a requirement for cache
comparator systems. The IDT71B74 can also be used as a
resettable 8K x 8 high-speed static RAM.
The IDT71B74 is fabricated using IDT’s high-performance,
high-reliability BiCMOS technology. Address access times as
fast as 8ns, chip select times of 6ns and address-to-match
times of 8ns are available.
The MATCH pin of several IDT71B74s can be wired-ORed
together to provide enabling or acknowledging signals to the
data cache or processor, thus eliminating logic delays and
increasing system throughput.
FUNCTIONAL BLOCK DIAGRAM
A0
ADDRESS
DECODER
A12
RESET
I/O0 - 7
WE
OE
CS
8
CONTROL
LOGIC
EQUAL
MATCH (OPEN DRAIN)
65,536-BIT
MEMORY ARRAY
I/O CONTROL
VCC
GND
3013 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
COMMERCIAL TEMPERATURE RANGE AUGUST 1996
1996 Integrated Device Technology, Inc. DSC-3013/4
14.1
1
IDT71B74
BiCMOS STATIC RAM 64K (8K x 8-BIT) CACHE-TAG RAM COMMERCIAL TEMPERATURE RANGE
PIN CONFIGURATION
RESET
A
A
A
A
A
A
A
A
A
I/O
I/O
I/O
GND
1
2
12
3
7
4
6
5
5
4
3
2
1
0
0
1
2
6
7
8
9
10
11
12
13
14
P28-2
SO28-5
DIP/SOJ
V
CC
28
WE
27
MATCH
26
A
8
25
24
A
9
A
23
11
22
OE
A
10
21
20
CS
I/O
I/O
I/O
I/O
I/O
7
6
5
4
3
3013 drw 02
19
18
17
16
15
TOP VIEW
TRUTH TABLE
WEWECSCSOEOERESET
(1, 2)
RESET
MATCH I/O Function
X X X L HIGH — Reset all bits to LOW
X H X H HIGH Hi-Z Deselect chip
H L H H LOW DIN No MATCH
H L H H HIGH DIN MATCH
H L L H HIGH DOUT Read
L L X H HIGH D
NOTES: 3013 tbl 01
1. H = VIH, L = VIL, X = DON'T CARE
2. HIGH = High-Z (pulled up by an external resistor), and LOW = V
IN Write
OL.
PIN DESCRIPTIONS
Pin Names Description
A0–12 Address
I/O0-7 Data Input/Output
CS
RESET
MATCH Data/Memory Match (Open Drain)
WE
OE
GND Ground
V
CC Power
Chip Select
Memory Reset
Write Enable
Output Enable
3013 tbl 02
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Rating Com’l. Unit
(2)
V
TERM
Terminal Voltage with –0.5 to +7.0 V
Respect to GND
TA Operating Temperature 0 to +70 °C
TBIAS Temperature Under Bias –55 to +125 ° C
TSTG Storage Temperature –55 to +125 °C
PT Power Dissipation 1.0 W
OUT DC Output Current 50 mA
I
NOTES: 3013 tbl 03
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
TERM must not exceed VCC + 0.5V.
2. V
CAPACITANCE
(TA = +25°C, f = 1.0MHz, SOJ Package)
Symbol Parameter
CIN Input Capacitance VIN = 3dV 6 pF
OUT Output Capacitance VOUT = 3dV 7 pF
C
NOTE: 3013 tbl 04
1. This parameter is determined by device characterization, but is not
production tested.
(1)
Conditions Max. Unit
14.1 2
IDT71B74
BiCMOS STATIC RAM 64K (8K x 8-BIT) CACHE-TAG RAM COMMERCIAL TEMPERATURE RANGE
RECOMMENDED DC OPERATING
CONDITIONS
Symbol Parameter Min. Typ. Max. Unit
VCC Supply Voltage 4.5 5.0 5.5 V
GND Supply Voltage 0 0 0 V
VIH Input HIGH Voltage
VIHR
V
IL Input LOW Voltage –0.5
NOTES: 3013 tbl 05
1. All inputs except
2. When using bipolar devices to drive the
1kΩ–10kΩ is usually required to assure this voltage.
3. V
IL (min.) = –1.5V for pulse width less than 10ns, once per cycle.
TERM must not exceed VCC + 0.5V.
4. V
RESET
Input Voltage 2.5
RESET
.
(1)
2.2 — 6.0
(2)
(3)
RESET
— 6.0 V
— 0.8 V
input, a pullup resistor of
DC ELECTRICAL CHARACTERISTICS
(4)
(1)
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade Ambient Temperature GND VCC
Commercial 0°C to +70°C 0V 5V ± 10%
3013 tbl 06
V
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC – 0.2V)
Symbol Parameter 71B74S8 71B74S10 71B74S12 71B74S15 71B74S20 Unit
CC Dynamic Operating Current
I
Outputs Open, VCC = Max., f = fMAX
NOTES: 3013 tbl 07
1. All values are maximum guaranteed values.
MAX = 1/tRC, only input addresses are cycling at fMAX.
2. f
WE
= VLC 230 210 200 190 180 mA
(2)
WE
= VHC 210 200 170 160 150 mA
DC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE
AND SUPPLY VOLTAGE
Symbol Parameter Test Condition Min. Max. Unit
|I
LI| Input Leakage Current VCC = Max., VIN = GND to VCC —5µA
LO| Output Leakage Current VCC = Max.,
|I
VOL Output LOW Voltage IOL = 22mA MATCH — 0.5 V
OH Output HIGH Voltage IOH = –4mA, VCC = Min. (Except MATCH) 2.4 — V
V
AC TEST CONDITIONS
Input Pulse Levels GND to 3.0V
Input Rise/Fall Times 3ns
Input Timing Reference Levels 1.5V
Output Reference Levels 1.5V
AC Test Load See Figures 1, 2, and 3
(VCC = 5.0V ± 10%)
VOUT = GND to VCC
OL = 18mA MATCH — 0.4
I
OL = 10mA, VCC = Min. (Except MATCH) — 0.5
I
IOL = 8mA, VCC = Min. (Except MATCH) — 0.4
IDT71B74S
CS
= VIH,—5µA
3013 tbl 08
1.5V
50
Ω
DATA
OUT
3013 drw 03
3013 tbl 09
Figure 1. AC Test Load
14.1 3