Integrated Device Technology Inc IDT7188S25DB, IDT7188S35DB, IDT7188S45DB, IDT7188S55DB, IDT7188S70DB Datasheet

Integrated Device Technology, Inc.

W

CMOS STATIC RAM
64K (16K x 4-BIT)

IDT7188S
IDT7188L

FEATURES:

• High-speed (equal access and cycle times)
— Military: 25/35/45/55/70/85ns (max.)

• Low power consumption

• Battery backup operation — 2V data retention (L version
only)

• Available in high-density industry standard 22-pin, 300
mil ceramic DIP

• Produced with advanced CMOS technology

• Inputs/outputs TTL-compatible

• Military product compliant to MIL-STD-883, Class B

DESCRIPTION:

The IDT7188 is a 65,536-bit high-speed static RAM
organized as 16K x 4. It is fabricated using IDT’s high­performance, high-reliability technology — CMOS. This state­of-the-art technology, combined with innovative circuit design

FUNCTIONAL BLOCK DIAGRAM

A0

techniques, provides a cost effective approach for memory
intensive applications.

Access times as fast as 25ns are available. The IDT7188

offers a reduced power standby mode, I

SB1, which is activated

when CS goes HIGH. This capability significantly decreases

power while enhancing system reliability. The low-power
version (L) version also offers a battery backup data retention
capability where the circuit typically consumes only 30µW
operating from a 2V battery.

All inputs and outputs are TTL-compatible and operate
from a single 5V supply. The IDT7188 is packaged in 22-pin,
300 mil ceramic DIP providing excellent board-level packing
densities.

Military grade product is manufactured in compliance with
the latest revision of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.

VCC

CS

E

I/O0

I/O1

I/O2

I/O3

A13

DECODER

INPUT

DATA

CONTROL

GND

65,536-BIT

MEMORY ARRAY

COLUMN I/O

2989 drw 01

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

MILITARY TEMPERATURE RANGE AUGUST 1996

1996 Integrated Device Technology, Inc. DSC-2989/7
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.

6.3

1

IDT7188S/L
CMOS STATIC RAM 64K (16K x 4-BIT) MILITARY TEMPERATURE RANGE

PIN CONFIGURATIONS

1

A0

2

A1

3

A2

4

A3

5

A4

6

A

5

A6
A7
A8

CS

GND

D22-1

7
8
9
10
11

DIP

TOP VIEW

PIN DESCRIPTIONS

Name Description

A0–A13 Address Inputs

CS
WE

I/O0-3 Data Input/Output
VCC Power
GND Ground

Chip Select
Write Enable

22
21

20
19

18
17
16
15
14
13
12

2989 drw 02

VCC
A13
A12
A11
A10

A9
I/O3
I/O
I/O1
I/O0
WE

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol Rating Com’l. Mil. Unit

TERM Terminal Voltage –0.5 to +7.0 –0.5 to +7.0 V

V

with Respect
to GND

T

A Operating 0 to +70 –55 to +125 °C

Temperature

BIAS Temperature –55 to +125 –65 to +135 °C

T

Under Bias

STG Storage –55 to +125 –65 to +150 °C

T

Temperature

2

PT Power Dissipation 1.0 1.0 W

OUT DC Output 50 50 mA

I

Current

NOTE: 2989 tbl 03

1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.

CAPACITANCE

Symbol Parameter

(TA = +25°C, f = 1.0MHz, VCC = 0v))

(1)

Conditions Max. Unit

CIN Input Capacitance VIN = 0V 6 pF
C

I/O I/O Capacitance VOUT = 0V 6 pF

NOTE: 2989 tbl 04

1. This parameter is determined by device characterization, but is not

production tested.

RECOMMENDED DC OPERATING
CONDITIONS

Symbol Parameter Min. Typ. Max. Unit

VCC Supply Voltage 4.5 5.0 5.5 V
GND Supply Voltage 0 0 0 V

2989 tbl 01

VIH Input High Voltage 2.2 — 6.0 V
V

IL Input Low Voltage –0.5

NOTE: 2989 tbl 05

1. VIL (min.) = –3.0V for pulse width less than 20ns,once per cycle.

(1)

— 0.8 V

CS

CS

(1)

WE

WE

I/O Power

TRUTH TABLE

Mode

Standby H X High Z Standby
Read L H DOUT Active
Write L L D

NOTE: 2989 tbl 02

1. H = VIH, L = VIL, X = don't care.

IN Active

RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE

Grade Temperature GND VCC

Military –55°C to +125°C 0V 5V ± 10%
Commercial 0°C to +70°C 0V 5V ± 10%

2989 tbl 06

6.3 2

IDT7188S/L
CMOS STATIC RAM 64K (16K x 4-BIT) MILITARY TEMPERATURE RANGE

DC ELECTRICAL CHARACTERISTICS

VCC = 5.0V ± 10%

IDT7188S IDT7188L

Symbol Parameter Test Condition Min. Max. Min. Max. Unit

|I

LI| Input Leakage Current VCC = Max., MIL. — 10 — 5 µA

VIN = GND to VCC COM’L. — 5 — 2

LO| Output Leakage Current VCC = Max., CS = VIH, MIL. — 10 — 5 µA

|I

VOUT = GND to VCC COM’L. — 5 — 2

OL Output Low Voltage IOL = 10mA, VCC = Min. 0.5 — 0.5 V

V

IOL = 8mA, VCC = Min. — 0.4 — 0.4

OH Output High Voltage IOH = –4mA, VCC = Min. 2.4 — 2.4 — V

V

2989 tbl 07

DC ELECTRICAL CHARACTERISTICS

(1)

(VCC = 5V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)

7188S25 7188S35 7188S45 7188S55/70 7188S85
7188L25 7188L35 7188L45 7188L55/70 7188L85

Symbol Parameter Power Com’l. Mil. Com’l. Mil. Com’l. Mil. Com’l. Mil. Com’l. Mil. Unit

I

CC1 Operating Power S — 105 — 105 — 105 — 105 — 105 mA

Supply Current

CS

= V

IL, Outputs Open L — 80 — 80 — 80 — 80 — 80

VCC = Max., f = 0

ICC2 Dynamic Operating S — 155 — 140 — 140 — 140 — 140 mA

Current

CS

= V

IL, Outputs Open L — 120 — 115 — 110 — 110 — 105

VCC = Max., f = fMAX

ISB Standby Power Supply S — 60 — 50 — 50 — 50 — 50 mA

Current (TTL Level)

CS

≥ V

IH, VCC = Max., L — 40 — 40 — 35 — 35 — 35

Outputs Open, f = fMAX

ISB1 Full Standby Power S — 20 — 20 — 20 — 20 — 20 mA

Supply Current (CMOS
Level) CS ≥ V
V

CC=Max., VIN ≥ VHC or L — 1.5 — 1.5 — 1.5 — 1.5 — 1.5

V

IN ≤ VLC, f = 0

NOTES: 2989 tbl 08

1. All values are maximum guaranteed values.

2. At f = f

MAX address and data inputs are cycling at the maximum frequency of read cycles of 1/tRC. f = 0 means no input lines change.

(2)

(2)

(2)

HC,

(2)

6.3 3