IDT IDT7188S, IDT7188L User Manual

CMOS Static RAM
64K (16K x 4-Bit)

Features

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High-speed (equal access and cycle times)

– Military: 25/35/45/55/70/85ns (max.)

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Low power consumption

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Battery backup operation — 2V data retention
(L version only)

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Available in high-density industry standard 22-pin, 300 mil
ceramic DIP

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Produced with advanced CMOS technology

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Inputs/outputs TTL-compatible

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Military product compliant to MIL-STD-883, Class B

Description

The IDT7188 is a 65,536-bit high-speed static RAM organized as
16K x 4. It is fabricated using IDT’s high-performance, high-reliability
technology — CMOS. This state-of-the-art technology, combined with

Functional Block Diagram

IDT7188S

IDT7188L

innovative circuit design techniques, provides a cost effective approach
for memory intensive applications.

Access times as fast as 25ns are available. The IDT7188 offers a
reduced power standby mode, ISB1, which is activated when CS goes
HIGH. This capability significantly decreases power while enhancing
system reliability. The low-power version (L) version also offers a battery
backup data retention capability where the circuit typically consumes only
30µW operating from a 2V battery.

All inputs and outputs are TTL-compatible and operate from a single
5V supply. The IDT7188 is packaged in a 22-pin, 300 mil ceramic DIP
providing excellent board-level packing densities.

Military grade product is manufactured in compliance with the latest
revision of MIL-STD-883, Class B, making it ideally suited to military
temperature applications demanding the highest level of performance
and reliability.

CS

I/O

I/O

I/O

I/O

0

A

DECODER

13

A

0

1

2

3

INPUT

DATA

CONTROL

65,536-BIT

MEMORY ARRAY

COLUMN I/O

CC

V
GND

,

WE

©2000 Integrated Device Technology, Inc.

2989 drw 01

FEBRUARY 2001

1

DSC-2989/09

IDT7188S/L

Name

Description

13

0

3

CC

Mode

I/O

Power

OUT

IN

Symbol

Rating

Value

Unit

TERM

A

BIAS

STG

T

OUT

Symbol

Parameter

(1)

Conditions

Max.

Uni t

IN

I/O

OUT

Symbol

Parameter

Min.

Typ.

Max.

Uni t

CC

IH

IL

Grade

Temperature

GND

Vcc

CMOS Static RAM 64K (16K x 4-Bit) Military Temperature Range

Pin Configuration

Absolute Maximum Ratings

(1)

1

0

A

2

1

A

3

2

A

4

3

A

5

4

A
A
A
A
A

CS

GND

6

5

7

6

8

7

9

8

10
11

Top View

Pin Descriptions

A0 - A

CS

WE

- I/O

I/O

V

GND Ground

D22-1

DIP

22
21

20
19

18
17
16
15
14
13
12

Address Inputs

Chip Se le c t

Write Enabl e

Data Inp ut/ Outp ut

CC

V

13

A

12

A

11

A

10

A

9

A
I/O
I/O
I/O
I/O

WE

2989 drw 02

Power

V

3
2
1

NOTE:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS

0

,

Terminal Voltage with Respect to GND -0.5 to +7.0 V

T

Ope rating Tempe rature -55 to + 125oC

T

Temperature Under Bias -65 to +135oC

T

Storage Temperature -65 to +150oC

P

Po we r Di s s ip ati o n 1. 0 W

I

DC Outp ut Cu rre nt 50 mA

2989 tbl 03

may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.

Capacitance

(TA = +25°C, f = 1.0MHz, VCC = 0V)

C
C

NOTE:

1. This parameter is determined by device characterization, but is not production
tested.

Input Capacitance VIN = 0V 6 pF
I/O Capacitance V

= 0V 6 pF

2989 tbl 04

Recommended DC Operating
Conditions

2989 tbl 01

V

Supp ly Vol tage 4.5 5.0 5.5 V

Truth Table

Standby H X High-Z Standby
Re a d L H D
Write L L D

NOTE:

1. H = VIH, L = VIL , X = don't care.

(1)

CS WE

Active
Active

2989 tbl 02

GND Ground 0 0 0 V

Inp ut Hig h Vo ltag e 2. 2

V
V

Inpu t Lo w Vo l tag e -0. 5

NOTE:

1. VIL (min.) = –3.0V for pulse width less than 20ns,once per cycle.

____

6.0 V

(1)

____

0.8 V

Recommended Operating
Temperature and Supply Voltage

Military -55OC to +1 25OC0V 5V ± 10%

2

2989 tbl 05

2989 tbl 06

IDT7188S/L

Symbol

Param et e r

Test Conditions

IDT7188S

IDT7188L

Unit

Min.

Max.

Min.

Max.

L

I

CC

OUT

CC

OL

OL

OL

OH

2989 tbl 07

Symbol

Parameter

Power

7188S25

7188L25

7188S35

7188L35

7188S45

7188L45

7188S55

7188L55

7188S70

7188L70

7188S85

7188L85

Uni t

IL

CC

IL

CC

MAX

CC

MAX

HC

2989 tbl 08

CMOS Static RAM 64K (16K x 4-Bit) Military Temperature Range

DC Electrical Characteristics

(VCC = 5.0V ± 10%)

|I

| Inp ut Le a kage Curr e nt VCC = Max., VIN = GND to V

|ILO| Output Leakag e Current VCC = Max., CS = VIH, V

Output Low Voltage

V

V

Outp ut Hig h Vol tag e IOH = -4mA, VCC = Min. 2.4

DC Electrical Characteristics

= 10mA, VCC = Min.

I
I

= 8mA, VCC = Min.

(1)

(VCC = 5V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)

I

Operating Power

CC1

Supply Current

= V

CS

= Max., f = 0

V

I

Dyna mi c Op e rati ng Curr e nt

CC2

CS = V

= Max., f = f

V
Stand by Po wer Supply

I

SB

Current (TTL Lev el )

VIH, Outp uts Op e n

CS >

= Max., f = f

V

, Outp uts Op e n

(2)

, Outp uts Op e n

(2)

(2)

S 105 105 105 105 105 105

L808080808080
S 155 140 140 140 140 140

L 120 115 110 110 110 105
S605050505050

L404035353535

= GND to V

____

____

____

____

10
10

0.5

0.4

____

____

____

____

____

2.4

5µA
5µA

0.5

V

0.4

____

V

mA

mA

mA

I

Full Standby Power

SB1

Sup p ly Current (CMOS Le ve l )

VHC, VCC = Max., VIN > V

CS >
or VIN < VLC, f = 0

NOTES:

1. All values are maximum guaranteed values.

2. At f = fMAX address and data inputs are cycling at the maximum frequency of read cycles of 1/tRC. f = 0 means no input lines change.

(2)

S202020202020

L 1.5 1.5 1.5 1.5 1.5 1.5

mA

6.42

3