Integrated Device Technology Inc IDT7187L25DB, IDT7187L35DB, IDT7187L35L22B, IDT7187L45DB, IDT7187L55DB Datasheet

Integrated Device Technology, Inc.

CMOS STATIC RAM
64K (64K x 1-BIT)

IDT7187S
IDT7187L

FEATURES:

• High speed (equal access and cycle time)
— Military: 25/35/45/55/70/85ns (max.)

• Low power consumption

• Battery backup operation—2V data retention (L version
only)

• JEDEC standard high-density 22-pin ceramic DIP, 22-pin
leadless chip carrier

• Produced with advanced CMOS high-performance
technology

• Separate data input and output

• Input and output directly TTL-compatible

• Military product compliant to MIL-STD-883, Class B

FUNCTIONAL BLOCK DIAGRAM

A

DESCRIPTION:

The IDT7187 is a 65,536-bit high-speed static RAM
organized as 64K x 1. It is fabricated using IDT’s high­performance, high-reliability CMOS technology. Access times
as fast as 25ns are available.

Both the standard (S) and low-power (L) versions of the
IDT7187 provide two standby modes—ISB and ISB1. ISB
provides low-power operation; ISB1 provides ultra-low-power
operation. The low-power (L) version also provides the capa­bility for data retention using battery backup. When using a 2V
battery, the circuit typically consumes only 30µW.

Ease of system design is achieved by the IDT7187 with full
asynchronous operation, along with matching access and
cycle times. The device is packaged in an industry standard
22-pin, 300 mil ceramic DIP, or 22-pin leadless chip carriers.

Military grade product is manufactured in compliance with
the latest revision of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.

DATA

A

A

A

A

A

A

CS

IN

WE

ROW

SELECT

65,536-BIT

MEMORY ARRAY

COLUMN I/O

AAAAAAA

V

CC

GND

DATA

2986 drw 01

OUT

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

MILITARY TEMPERATURE RANGE AUGUST 1996

1996 Integrated Device Technology, Inc. 2986/7
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.

6.2

1

IDT7187S/L
CMOS STATIC RAM 64K (64K x 1-BIT) MILITARY TEMPERATURE RANGE

PIN CONFIGURATIONS

0

1

A0

2

A1

3

A2

4

A3

5

A4

6

A

5

A6
A7

DATA

OUT

WE

GND CS

D22-1

7
8
9
10
11

22
21

20
19

18
17
16
15
14
13
12

VCC
A15
A14
A13
A12
A11
A10
A9
A8
DATAIN

2986 drw 02

INDEX

A2
A3

A4

A5
A6
A7

DATAOUT

1

A

2

3
4

5

L22-1

6
7
8
9

10 11 12 13

WE

A

1

GND

VCC

22 21

CS

15

A

20
19
18
17

16
15
14

IN

2986 drw 03

DATA

A14
A13
A12
A11
A10
A
A8

9

DIP

TOP VIEW

PIN DESCRIPTIONS

Name Description

A

0–A15 Address Inputs

CS

WE

V

CC Power

DATA

IN Data Input

DATA

OUT Data Output

GND Ground

Chip Select

Write Enable

2986 tbl 01

22-PIN LCC

TOP VIEW

CS

CS

(1)

WE

WE

Output Power

TRUTH TABLE

Mode

Standby H X High-Z Standby

Read L H D

OUT Active

Write L L High-Z Active

NOTE: 2986 tbl 02

1. H = VIH, L = VIL, X = don't care.

6.2 2

IDT7187S/L
CMOS STATIC RAM 64K (64K x 1-BIT) MILITARY TEMPERATURE RANGE

ABSOLUTE MAXIMUM RATINGS

(1)

Symbol Rating Com’l. Mil. Unit

V

TERM Terminal Voltage –0.5 to +7.0 –0.5 to +7.0 V

with Respect

to GND

T

A Operating 0 to +70 –55 to +125 °C

Temperature

T

BIAS Temperature –55 to +125 –65 to +135 °C

Under Bias

T

STG Storage –55 to +125 –65 to +150 °C

Temperature

P

T Power Dissipation 1.0 1.0 W

I

OUT DC Output 50 50 mA

Current

NOTE: 2986 tbl 03

1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.

CAPACITANCE (TA = +25°C, F = 1.0MHZ)

Symbol Parameter

C

IN Input Capacitance VIN = 0V 8 pF

C

OUT Output Capacitance VOUT = 0V 8 pF

NOTE: 2986 tbl 04

1. This parameter is determined by device characterization, but is not
production tested.

(1)

Conditions Max. Unit

RECOMMENDED DC OPERATING
CONDITIONS

Symbol Parameter Min. Typ. Max. Unit

V

CC Supply Voltage 4.5 5.0 5.5 V

G

ND Supply Voltage 0 0 0 V

V

IH Input High Voltage 2.2 — 6.0 V

V

IL Input Low Voltage –0.5

NOTE: 2986 tbl 05

1. VIL (min.) = –3.0V for pulse width less than 20ns, once per cycle.

(1)

— 0.8 V

RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE

Grade Temperature GND VCC

Military –55°C to +125°C 0V 5V ± 10%

Commercial 0°C to +70°C 0V 5V ± 10%

2986 tbl 06

DC ELECTRICAL CHARACTERISTICS

(VCC = 5.0V ± 10%)

IDT7187S IDT7187L

Symbol Parameter Test Condition Min. Max. Min. Max. Unit

|I

LI| Input Leakage Current VCC = Max., MIL. — 10 — 5 µA

V

IN = GND to VCC COM’L. — 5 — 2

|I

LO| Output Leakage Current VCC = Max.,

V

OUT = GND to VCC COM’L. — 5 — 2

V

OL Output Low Voltage IOL = 10mA, VCC = Min. 0.5 — 0.5 V

I

OL = 8mA, VCC = Min. — 0.4 — 0.4

V

OH Output High Voltage IOH = –4mA, VCC = Min. 2.4 — 2.4 — V

CS

= VIH, MIL. — 10 — 5 µ A

2986 tbl 07

6.2 3