Integrated Device Technology Inc IDT7164L20D, IDT7164L20DB, IDT7164L20P, IDT7164L20PB, IDT7164L20TD Datasheet
...
Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGES MAY 1996
1996 Integrated Device Technology, Inc. 2967/8
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
FEATURES:
• High-speed address/chip select access time
— Military: 20/25/30/35/45/55/70/85ns (max.)
— Commercial: 15/20/25/35/70ns (max.)
• Low power consumption
• Battery backup operation — 2V data retention voltage
(L Version only)
• Produced with advanced CMOS high-performance
technology
• Inputs and outputs directly TTL-compatible
• Three-state outputs
• Available in:
— 28-pin DIP and SOJ
• Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The IDT7164 is a 65,536 bit high-speed static RAM organized as 8K x 8. It is fabricated using IDT’s high-performance,
high-reliability CMOS technology.
Address access times as fast as 15ns are available and the
circuit offers a reduced power standby mode. When
CS
1 goes
HIGH or CS2 goes LOW, the circuit will automatically go to,
and remain in, a low-power stand by mode. The low-power (L)
version also offers a battery backup data retention capability
at power supply levels as low as 2V.
All inputs and outputs of the IDT7164 are TTL-compatible
and operation is from a single 5V supply, simplifying system
designs. Fully static asynchronous circuitry is used, requiring
no clocks or refreshing for operation.
The IDT7164 is packaged in a 28-pin 300 mil DIP and SOJ;
and 28-pin 600 mil DIP.
Military grade product is manufactured in compliance with
the latest revision of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.
FUNCTIONAL BLOCK DIAGRAM
ADDRESS
DECODER
65,536 BIT
MEMORY ARRAY
I/O CONTROL
2967 drw 01
WE
CS
V
CC
GND
I/O
0
I/O7
CONTROL
LOGIC
OE
2
CS
1
A
0
A
12
0
7
6.1
1
IDT7164S
IDT7164L
CMOS STATIC RAM
64K (8K x 8-BIT)
6.1 2
IDT7164S/L
CMOS STATIC RAM 64K (8K x 8-BIT) MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
PIN DESCRIPTIONS
Name Description
A
0–A12 Address
I/O
0–I/O7 Data Input/Output
CS
1 Chip Select
CS
2 Chip Select
WE
Write Enable
OE
Output Enable
GND Ground
VCC Power
2967 tbl 01
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Rating Com’l. Mil. Unit
V
TERM
(2)
Terminal Voltage –0.5 to +7.0 –0.5 to +7.0 V
with Respect
to GND
T
A Operating 0 to +70 –55 to +125 °C
Temperature
T
BIAS Temperature –55 to +125 –65 to +135 °C
Under Bias
T
STG Storage –55 to +125 –65 to +150 °C
Temperature
P
T Power Dissipation 1.0 1.0 W
I
OUT DC Output 50 50 mA
Current
NOTES: 2967 tbl 03
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. V
TERM must not exceed VCC + 0.5V.
DIP/SOJ
TOP VIEW
TRUTH TABLE
(1,2,3)
WEWECS
CS
1 CS2
OEOEI/O Function
X H X X High-Z Deselected – Standby (I
SB)
X X L X High-Z Deselected – Standby (I
SB)
XV
HC VHC or X High-Z Deselected –Standby (ISB1)
V
LC
XXVLC X High-Z Deselected –Standby (ISB1)
H L H H High-Z Output Disabled
H L H L Data
OUT Read Data
L L H X Data
IN Write Data
NOTES: 2967 tbl 02
1. CS2 will power-down
CS
1, but CS1 will not power-down CS2.
2. H = V
IH, L = VIL, X = don't care.
3. V
LC = 0.2V, VHC = VCC - 0.2V
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade Temperature GND VCC
Military –55°C to +125°C 0V 5V ± 10%
Commercial 0°C to +70°C 0V 5V ± 10%
2967 tbl 04
RECOMMENDED DC OPERATING
CONDITIONS
Symbol Parameter Min. Typ. Max. Unit
V
CC Supply Voltage 4.5 5.0 5.5 V
GND Supply Voltage 0 0 0 V
V
IH Input HIGH Voltage 2.2 — VCC + 0.5 V
V
IL Input LOW Voltage –0.5
(1)
— 0.8 V
NOTE: 2967 tbl 05
1. VIL (min.) = –1.5V for pulse width less than 10ns, once per cycle.
2967 drw 02
5
6
7
8
9
10
11
12
A12
1
2
3
4
24
23
22
21
20
19
18
17
D28-1
D28-3
P28-1
P28-2
SO28-5
13
14
28
27
26
25
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
VCC
WE
A
8
A9
A11
OE
A
10
CS
1
I/O7
16
15
I/O2
GND
I/O
6
I/O5
I/O4
I/O3
NC
CS
2
6.1 3
IDT7164S/L
CMOS STATIC RAM 64K (8K x 8-BIT) MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS
(1)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
7164S15 7164S20 7164S25 7164S30
7164L15 7164L20 7164L25 7164L30
Symbol Parameter Power Com’l. Mil. Com’l. Mil. Com’l. Mil. Com’l. Mil. Unit
I
CC1 Operating Power Supply S 110 — 100 110 90 110 — 100 mA
Current,
CS
1 = VIL, CS2 = VIH,
Outputs Open, V
CC = Max., f = 0
(3)
L 100 — 90 100 80 100 — 90
I
CC2 Dynamic Operating Current S 180 — 170 180 170 180 — 170 mA
CS
1 = VIL, CS2 = VIH,
Outputs Open, V
CC = Max., f = fMAX
(3)
L 150 — 150 160 150 160 — 150
I
SB Standby Power Supply Current S 20 — 20 20 20 20 — 20 mA
(TTL Level),
CS
1 ≥ VIH or CS2 ≤ VIL
VCC = Max., Outputs Open, f = fMAX
(3)
L 3—353 5—5
I
SB1 Full Standby Power Supply Current S 15 — 15 20 15 20 — 20 mA
(CMOS Level), f = 0
(3)
, VCC = Max.
1. CS1 ≥ V
HC and CS2 ≥ VHC, or L 0.2 — 0.2 1 0.2 1 — 1
2. CS
2 ≤ VLC
CAPACITANCE (TA = +25°C, f = 1.0MHz)
Symbol Parameter
(1)
Conditions Max. Unit
C
IN Input Capacitance VIN = 0V 8 pF
C
I/O I/O Capacitance VOUT = 0V 8 pF
NOTE: 2967 tbl 06
1. This parameter is determined by device characterization, but is not
production tested.
DC ELECTRICAL CHARACTERISTICS
(1)
(Continued)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
7164S35 7164S45 7164S55 7164S70
(2)
/85
(4)
7164L35 7164L45 7164L55 7164L70
(2)
/85
(4)
Symbol Parameter Power Com’l. Mil. Com’l. Mil. Com’l. Mil. Com’l. Mil. Unit
I
CC1 Operating Power Supply S 90 100 — 100 — 100 90 100 mA
Current,
CS
1 = VIL, CS2 = VIH,
Outputs Open, VCC = Max., f = 0
(3)
L 8090—90—90 8090
I
CC2 Dynamic Operating Current S 150 160 — 160 — 160 150 160 mA
CS
1 = VIL, CS2 = VIH,
Outputs Open, VCC = Max., f = fMAX
(3)
L 130 140 — 130 — 125 130 120
I
SB Standby Power Supply Current S 20 20 — 20 — 20 20 20 mA
(TTL Level),
CS
1 ≥ VIH, or CS2 ≤ VIL
VCC = Max., Outputs Open, f = fMAX
(3)
L35—5—5 35
I
SB1 Full Standby Power Supply Current S 15 20 — 20 — 20 15 20 mA
(CMOS Level), f = 0
(3)
, VCC = Max.
1.
CS
1 ≥ VHC and CS2 ≥ VHC, or L 0.2 1 — 1 — 1 0.2 1
2. CS
2 ≤ VLC
NOTES: 2967 tbl 07
1. All values are maximum guaranteed values.
2. 70 ns available in both military and commercial devices.
3. f
MAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing.
4. Also available: 100ns military devices.
Loading...