IDT IDT7164S, IDT7164L User Manual
Integrated Device Technology, Inc.
CMOS STATIC RAM
64K (8K x 8-BIT)
IDT7164S
IDT7164L
FEATURES:
• High-speed address/chip select access time
— Military: 20/25/30/35/45/55/70/85ns (max.)
— Commercial: 15/20/25/35/70ns (max.)
• Low power consumption
• Battery backup operation — 2V data retention voltage
(L Version only)
• Produced with advanced CMOS high-performance
technology
• Inputs and outputs directly TTL-compatible
• Three-state outputs
• Available in:
— 28-pin DIP and SOJ
• Military product compliant to MIL-STD-883, Class B
FUNCTIONAL BLOCK DIAGRAM
A
0
DESCRIPTION:
The IDT7164 is a 65,536 bit high-speed static RAM organized as 8K x 8. It is fabricated using IDT’s high-performance,
high-reliability CMOS technology.
Address access times as fast as 15ns are available and the
circuit offers a reduced power standby mode. When
HIGH or CS2 goes LOW, the circuit will automatically go to,
and remain in, a low-power stand by mode. The low-power (L)
version also offers a battery backup data retention capability
at power supply levels as low as 2V.
All inputs and outputs of the IDT7164 are TTL-compatible
and operation is from a single 5V supply, simplifying system
designs. Fully static asynchronous circuitry is used, requiring
no clocks or refreshing for operation.
The IDT7164 is packaged in a 28-pin 300 mil DIP and SOJ;
and 28-pin 600 mil DIP.
Military grade product is manufactured in compliance with
the latest revision of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.
V
CC
CS
1 goes
ADDRESS
DECODER
A
12
I/O
0
I/O7
CS
1
CS
2
OE
WE
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
CONTROL
LOGIC
65,536 BIT
MEMORY ARRAY
0
I/O CONTROL
7
GND
2967 drw 01
MILITARY AND COMMERCIAL TEMPERATURE RANGES MAY 1996
1996 Integrated Device Technology, Inc. 2967/8
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
6.1
1
IDT7164S/L
CMOS STATIC RAM 64K (8K x 8-BIT) MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
1
NC
2
A12
3
A7
4
A6
5
A5
6
A4
7
A3
8
A2
9
A1
10
A0
I/O0
I/O1
I/O2
GND
11
12
13
14
DIP/SOJ
TOP VIEW
PIN DESCRIPTIONS
Name Description
A
0–A12 Address
I/O
0–I/O7 Data Input/Output
CS
1 Chip Select
CS
2 Chip Select
WE
OE
GND Ground
VCC Power
D28-1
D28-3
P28-1
P28-2
SO28-5
Write Enable
Output Enable
VCC
28
WE
27
CS
26
A
25
24
A9
A11
23
OE
22
A
21
CS
20
I/O7
19
I/O
18
17
I/O5
16
I/O4
15
I/O3
2967 drw 02
8
10
2
TRUTH TABLE
WEWECS
X H X X High-Z Deselected – Standby (I
X X L X High-Z Deselected – Standby (I
1
6
XV
XXVLC X High-Z Deselected –Standby (ISB1)
1 CS2
CS
HC VHC or X High-Z Deselected –Standby (ISB1)
(1,2,3)
OE
OE
LC
V
I/O Function
SB)
SB)
H L H H High-Z Output Disabled
H L H L Data
L L H X Data
NOTES: 2967 tbl 02
1. CS2 will power-down
2. H = V
3. V
IH, L = VIL, X = don't care.
LC = 0.2V, VHC = VCC - 0.2V
CS
1, but CS1 will not power-down CS2.
OUT Read Data
IN Write Data
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
Grade Temperature GND VCC
Military –55°C to +125°C 0V 5V ± 10%
2967 tbl 01
Commercial 0°C to +70°C 0V 5V ± 10%
2967 tbl 04
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Rating Com’l. Mil. Unit
(2)
V
TERM
Terminal Voltage –0.5 to +7.0 –0.5 to +7.0 V
with Respect
to GND
T
A Operating 0 to +70 –55 to +125 °C
Temperature
T
BIAS Temperature –55 to +125 –65 to +135 °C
Under Bias
T
STG Storage –55 to +125 –65 to +150 °C
Temperature
P
T Power Dissipation 1.0 1.0 W
I
OUT DC Output 50 50 mA
Current
NOTES: 2967 tbl 03
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
TERM must not exceed VCC + 0.5V.
2. V
RECOMMENDED DC OPERATING
CONDITIONS
Symbol Parameter Min. Typ. Max. Unit
V
CC Supply Voltage 4.5 5.0 5.5 V
GND Supply Voltage 0 0 0 V
V
IH Input HIGH Voltage 2.2 — VCC + 0.5 V
V
IL Input LOW Voltage –0.5
NOTE: 2967 tbl 05
1. VIL (min.) = –1.5V for pulse width less than 10ns, once per cycle.
6.1 2
(1)
— 0.8 V
IDT7164S/L
CMOS STATIC RAM 64K (8K x 8-BIT) MILITARY AND COMMERCIAL TEMPERATURE RANGES
CAPACITANCE (TA = +25°C, f = 1.0MHz)
Symbol Parameter
C
IN Input Capacitance VIN = 0V 8 pF
C
I/O I/O Capacitance VOUT = 0V 8 pF
NOTE: 2967 tbl 06
1. This parameter is determined by device characterization, but is not
production tested.
(1)
Conditions Max. Unit
DC ELECTRICAL CHARACTERISTICS
(1)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
7164S15 7164S20 7164S25 7164S30
7164L15 7164L20 7164L25 7164L30
Symbol Parameter Power Com’l. Mil. Com’l. Mil. Com’l. Mil. Com’l. Mil. Unit
I
CC1 Operating Power Supply S 110 — 100 110 90 110 — 100 mA
Current,
Outputs Open, V
I
CC2 Dynamic Operating Current S 180 — 170 180 170 180 — 170 mA
CS
Outputs Open, V
I
SB Standby Power Supply Current S 20 — 20 20 20 20 — 20 mA
(TTL Level),
VCC = Max., Outputs Open, f = fMAX
I
SB1 Full Standby Power Supply Current S 15 — 15 20 15 20 — 20 mA
(CMOS Level), f = 0
1. CS1 ≥ V
2. CS
DC ELECTRICAL CHARACTERISTICS
CS
1 = VIL, CS2 = VIH,
CC = Max., f = 0
1 = VIL, CS2 = VIH,
CC = Max., f = fMAX
1 ≥ VIH or CS2 ≤ VIL
CS
(3)
, VCC = Max.
HC and CS2 ≥ VHC, or L 0.2 — 0.2 1 0.2 1 — 1
2 ≤ VLC
(3)
(3)
(3)
L 100 — 90 100 80 100 — 90
L 150 — 150 160 150 160 — 150
L 3—353 5—5
(1)
(Continued)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)
(2)
7164S35 7164S45 7164S55 7164S70
7164L35 7164L45 7164L55 7164L70
Symbol Parameter Power Com’l. Mil. Com’l. Mil. Com’l. Mil. Com’l. Mil. Unit
CC1 Operating Power Supply S 90 100 — 100 — 100 90 100 mA
I
Current,
Outputs Open, VCC = Max., f = 0
I
CC2 Dynamic Operating Current S 150 160 — 160 — 160 150 160 mA
CS
Outputs Open, VCC = Max., f = fMAX
SB Standby Power Supply Current S 20 20 — 20 — 20 20 20 mA
I
(TTL Level),
VCC = Max., Outputs Open, f = fMAX
I
SB1 Full Standby Power Supply Current S 15 20 — 20 — 20 15 20 mA
(CMOS Level), f = 0
1.
2. CS
NOTES: 2967 tbl 07
1. All values are maximum guaranteed values.
2. 70 ns available in both military and commercial devices.
MAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing.
3. f
4. Also available: 100ns military devices.
CS
1 = VIL, CS2 = VIH,
1 = VIL, CS2 = VIH,
CS
1 ≥ VIH, or CS2 ≤ VIL
(3)
, VCC = Max.
CS
1 ≥ VHC and CS2 ≥ VHC, or L 0.2 1 — 1 — 1 0.2 1
2 ≤ VLC
(3)
(3)
(3)
L 8090—90—90 8090
L 130 140 — 130 — 125 130 120
L35—5—5 35
(2)
/85
/85
(4)
(4)
6.1 3
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