• IDT7016 easily expands data bus width to 18 bits or
more using the Master/Slave select when cascading
more than one device
•M/S = H for
M/S = L for
BUSY
output flag on Master
BUSY
input on Slave
FUNCTIONAL BLOCK DIAGRAM
OE
L
CE
L
R/
W
L
• Busy and Interrupt Flags
• On-chip port arbitration logic
• Full on-chip hardware support of semaphore signaling
between ports
• Fully asynchronous operation from either port
• Devices are capable of withstanding greater than
2001V electrostatic discharge
• TTL-compatible, single 5V (±10%) power supply
• Available in ceramic 68-pin PGA, 68-pin PLCC, and
an 80-pin TQFP
• Industrial temperature range (–40°C to +85°C) is
available, tested to military electrical specifications
DESCRIPTION:
The IDT7016 is a high-speed 16K x 9 Dual-Port Static
RAMs. The IDT7016 is designed to be used as standalone Dual-Port RAM or as a combination MASTER/
SLAVE Dual-Port RAM for 18-bit-or-more wider systems.
OE
R
CE
R
R/
W
R
I/O0L- I/O
NOTES:
1. In MASTER mode:
In SLAVE mode:
2.
BUSY
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
outputs and
BUSY
8L
(1,2)
L
A
13L
A
0L
SEM
L
(2)
INT
L
BUSY
is an output and is a push-pull driver
BUSY
is input.
INT
outputs are non-tri-stated push-pull drivers.
Address
Decoder
CE
OE
R/
W
L
L
L
14
I/O
Control
MEMORY
ARRAY
ARBITRATION
INTERRUPT
SEMAPHORE
LOGIC
M/
S
I/O
Control
I/O0R-I/O
BUSY
Address
Decoder
14
CE
R
OE
R
R/
W
R
SEM
3190 drw 01
INT
8R
(1,2)
R
A
13R
A
0R
R
(2)
R
MILITARY AND COMMERCIAL TEMPERATURE RANGES OCTOBER 1996
For latest information contact IDT’s web site at www.idt.com or fax-on-demand at 408-492-8391.
6.131
IDT7016S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAMMILITARY AND COMMERCIAL TEMPERATURE RANGES
Using the IDT MASTER/SLAVE Dual-Port RAM approach in
18-bit or wider memory system applications results in fullspeed, error-free operation without the need for additional
discrete logic.
This device provides two independent ports with separate
control, address, and I/O pins that permit independent,
asynchronous access for reads or writes to any location in
memory. An automatic power down feature controlled by
CE
permits the on-chip circuitry of each port to enter a very low
Fabricated using IDT’s CMOS high-performance technol-
ogy, these devices typically operate on only 750mW of power.
The IDT7016 is packaged in a ceramic 68-pin PGA, a 64pin PLCC and an 80-pin TQFP (Thin Quad FlatPack). Military
grade product is manufactured in compliance with the latest
revision of MIL-STD-883, Class B, making it ideally suited to
military temperature applications demanding the highest level
of performance and reliability.
A
5L
4L
A
A
3L
A
2L
A
1L
A
0L
INT
L
BUSY
L
GND
M/
S
BUSY
R
INT
R
A
0R
A
1R
A
2R
A
3R
A
4R
R
R
R
OE
W
R/
R
SEM
CE
N/C
13R
A
12R
GND
A
11R
A
7R
8R
I/O
I/O
NOTES:
CC pins must be connected to power supply.
1. All V
2. All GND pins must be connected to ground supply.
3. This text does not imply orientation of Part-Mark.
10R
A
9R
A
8R
A
7R
A
6R
A
5R
A
3190 drw 02
PIN NAMES
Left PortRight PortNames
CE
L
R/
W
LR/WRRead/Write Enable
OE
L
A
0L – A13LA0R – A13RAddress
I/O
0L – I/O8LI/O0R – I/O8RData Input/Output
SEM
L
INT
L
BUSY
L
CE
RChip Enable
OE
ROutput Enable
SEM
RSemaphore Enable
INT
RInterrupt Flag
BUSY
RBusy Flag
M/
S
V
CCPower
GNDGround
Master or Slave Select
3190 tbl 01
6.132
IDT7016S/L
3190 drw 04
515048464442403836
53
55
57
59
61
63
65
676866
13579
111315
20
22
24
26
28
30
32
35
ABCDEFGH JKL
4745434134
21
23
25
27
29
31
33
246810121416
1819
17
56
58
60
62
64
11
10
09
08
07
06
05
04
03
02
01
5254493937
A
5L
INT
L
N/C
SEM
L
CE
L
V
CC
OE
L
R/
W
L
I/O
0L
I/O
8L
GNDGND
I/O
0R
V
CC
I/O
8R
OE
R
R/
W
R
SEM
R
CE
R
GND
BUSY
R
BUSY
L
M/
S
INT
R
N/C
GND
A
1R
INDEX
A
4LA2LA0L
A
3R
A
2R
A
4R
A
5R
A
7R
A
6R
A
9R
A
8R
A
11R
A
10R
A
12R
A
0R
A
7L
A
6L
A
3LA1L
A
9L
A
8L
A
11L
A
10L
A
12L
V
CC
I/O2RI/O3RI/O
5R
I/O
6R
I/O
1R
I/O
4R
I/O
7R
I/O
1L
I/O
2L
I/O
4L
I/O
7L
I/O
3L
I/O
5L
I/O
6L
A
13L
A
13R
IDT7016
G68-1
68-PIN PGA
TOP VIEW
(3)
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAMMILITARY AND COMMERCIAL TEMPERATURE RANGES
1. All Vcc pins must be connected to the power supply.
2. All GND pins must be connected to the ground supply.
3. This text does not indicate orientation of the actual part-marking.
6.133
IDT7016S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAMMILITARY AND COMMERCIAL TEMPERATURE RANGES
TRUTH TABLE I – NON-CONTENTION READ/WRITE CONTROL
Inputs
CECE
CE
CECE
R/
WW
W
WW
HXXHHigh-ZDeselected: Power-Down
LLXHDATA
LHLHDATA
XXHXHigh-ZOutputs Disabled
NOTE:3190 tbl 02
1. Condition: A0L — A13L is not equal to A0R — A13R.
(1)
OEOE
OE
OEOE
SEMSEM
SEM
SEMSEM
Outputs
0-8 Mode
I/O
INWrite to Memory
OUTRead Memory
TRUTH TABLE II – SEMAPHORE READ/WRITE CONTROL
InputsOutputs
CECE
CE
CECE
HHLLDATA
H
LXXL—Not Allowed
NOTE:
1. There are eight semaphore flags written to via I/O
ABSOLUTE MAXIMUM RATINGS
SymbolRatingCommercialMilitaryUnit
V
TERM
T
AOperating0 to +70–55 to +125°C
BIASTemperature–55 to +125–65 to +135°C
T
T
STGStorage–55 to +125–65 to +150°C
OUTDC Output5050mA
I
NOTES:3190 tbl 04
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
TERM must not exceed Vcc + 0.5V for more than 25% of the cycle time
2. V
or 10ns maximum, and is limited to
+ 0.5V.
CAPACITANCE
(TA = +25°C, f = 1.0MHz, TQFP ONLY)
SymbolParameterConditions
INInput CapacitanceVIN = 3dV9pF
C
OUTOutput CapacitanceVOUT = 3dV10pF
C
3190 tbl 07
NOTES:
1. This parameter is determined by device characteristics but is not produc-
tion tested.
2. 3dV references the interpolated capacitance when the input and output
signals switch from 0V to 3V or from 3V to 0V .
WW
R/
W
WW
u
(2)
Terminal Voltage –0.5 to +7.0–0.5 to +7.0V
OEOE
OE
OEOE
SEMSEM
SEM
SEMSEM
I/O
XLDATA
0-8 Mode
OUTRead Semaphore Flag Data Out (I/O0 - I/O8)
INWrite I/O0 into Semaphore Flag
0 and read from all I/O's(I/O0-I/O8). These eight semaphores are addressed by A0-A2.
(1)
with Respect
to GND
Temperature
Under Bias
Temperature
Current
< 20mA for the period of VTERM > Vcc
(1)
(2)
Max. Unit
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
GradeTemperatureGNDV
Military–55°C to +125°C0V5.0V ± 10%
Commercial0°C to +70°C0V5.0V ± 10%
RECOMMENDED DC OPERATING
CONDITIONS
SymbolParameterMin.Typ.Max. Unit
CCSupply Voltage4.55.05.5V
V
GNDSupply Voltage000V
IHInput High Voltage2.2—6.0
V
V
ILInput Low Voltage–0.5
NOTES:3190 tbl 06
1. VIL > -1.5V for pulse width less than 10ns.
TERM must not exceed Vcc + 0.5V.
2. V
(1)
Ambient
(1)
—0.8V
3190 tbl 03
CC
3190 tbl 05
(2)
V
6.134
IDT7016S/L
HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAMMILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE