• Battery backup operation — 2V data retention voltage
(IDT6167LA only)
• Available in 20-pin CERDIP and Plastic DIP, and 20-pin
SOJ
• Produced with advanced CMOS high-performance
technology
• CMOS process virtually eliminates alpha particle softerror rates
• Separate data input and output
• Military product compliant to MIL-STD-883, Class B
DESCRIPTION:
The lDT6167 is a 16,384-bit high-speed static RAM organized as 16K x 1. The part is fabricated using IDT’s highperformance, high reliability CMOS technology.
FUNCTIONAL BLOCK DIAGRAM
A0
Access times as fast as 15ns are available. The circuit also
offers a reduced power standby mode. When CS goes HIGH,
the circuit will automatically go to, and remain in, a standby
mode as long as CS remains HIGH. This capability provides
significant system-level power and cooling savings. The lowpower (LA) version also offers a battery backup data retention
capability where the circuit typically consumes only 1µW
operating off a 2V battery.
All inputs and the output of the IDT6167 are TTL-compatible and operate from a single 5V supply, thus simplifying
system designs.
The IDT6167 is packaged in a space-saving 20-pin, 300 mil
Plastic DIP or CERDIP, Plastic 20-pin SOJ, providing high
board-level packing densities.
Military grade product is manufactured in compliance with
the latest revision of MIL-STD-883, Class B, making it ideally
suited to military temperature applications demanding the
highest level of performance and reliability.
A13
DIN
CS
WE
CONTROL
LOGIC
ADDRESS
DECODE
16,384-BIT
MEMORY ARRAY
I/O CONTROL
VCC
GND
DOUT
2981 drw 01
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
MILITARY AND COMMERCIAL TEMPERATURE RANGESMARCH 1996
1996 Integrated Device Technology, Inc.2981/5
For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.
5.2
1
IDT6167SA/LA
CMOS STATIC RAM 16K (16K x 1-BIT)MILITARY AND COMMERCIAL TEMPERATURE RANGES
RECOMMENDED OPERATING
TEMPERATURE AND SUPPLY VOLTAGE
GradeTemperatureGNDVCC
Military–55°C to +125°C0V5V ± 10%
Commercial0°C to +70°C0V5V ± 10%
2981 tbl 06
ABSOLUTE MAXIMUM RATINGS
(1)
SymbolRatingCom’l.Mil.Unit
V
TERMTerminal Voltage –0.5 to +7.0 –0.5 to +7.0V
with Respect
to GND
AOperating0 to +70–55 to +125°C
T
Temperature
BIASTemperature–55 to +125 –65 to +135°C
T
Under Bias
STGStorage–55 to +125 –65 to +150°C
T
Temperature
PTPower Dissipation1.01.0W
OUTDC Output5050mA
I
Current
NOTE:2981 tbl 03
1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
CAPACITANCE (TA = +25°C, f = 1.0MHz)
SymbolParameter
CINInput CapacitanceVIN = 0V7pF
OUTOutput CapacitanceVOUT = 0V7pF
C
NOTE:2981 tbl 04
1. This parameter is determined by device characterization, but is not
production tested.
(1)
ConditionsMax. Unit
RECOMMENDED DC OPERATING
CONDITIONS
SymbolParameterMin.Typ.Max. Unit
VCCSupply Voltage4.55.05.5V
GNDSupply Voltage000V
VIHInput High Voltage2.2—6.0V
ILInput Low Voltage–0.5
V
NOTE:2981 tbl 05
1. VIL (min.) = –3.0V for pulse width less than 20ns, once per cycle.
(1)
—0.8V
5.22
IDT6167SA/LA
CMOS STATIC RAM 16K (16K x 1-BIT)MILITARY AND COMMERCIAL TEMPERATURE RANGES