W
A
D
C
,
CMOS Static RAM
16K (16K x 1-Bit)
Features
◆◆
◆
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High-speed (equal access and cycle time)
– Military: 25/35/45/55/70/85/100ns (max.)
– Commercial: 15/20/25ns (max.)
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◆
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Low power consumption
◆◆
◆
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Battery backup operation — 2V data retention voltage
(IDT6167LA only)
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Available in 20-pin CERDIP and Plastic DIP, and 20-pin SOJ
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Produced with advanced CMOS high-performance
technology
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CMOS process virtually eliminates alpha particle
soft-error rates
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Separate data input and output
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Military product compliant to MIL-STD-883, Class B
Description
The lDT6167 is a 16,384-bit high-speed static RAM organized
as 16K x 1. The part is fabricated using IDT’s high-performance,
IDT6167SA
IDT6167LA
high reliability CMOS technology.
Access times as fast as 15ns are available. The circuit also offers
a reduced power standby mode. When CS goes HIGH, the circuit
will automatically go to, and remain in, a standby mode as long as CS
remains HIGH. This capability provides significant system-level power
and cooling savings. The low-power (LA) version also offers a battery
backup data retention capability where the circuit typically consumes
only 1µW operating off a 2V battery.
All inputs and the output of the IDT6167 are TTL-compatible and
operate from a single 5V supply, thus simplifying system designs.
The IDT6167 is packaged in a space-saving 20-pin, 300 mil Plastic
DIP or CERDIP and a Plastic 20-pin providing high board-level packing
densities.
Military grade product is manufactured in compliance with the
latest revision of MIL-STD-883, Class B, making it ideally suited to
military temperature applications demanding the highest level of
performance and reliability.
Functional Block Diagram
A
0
V
CC
GND
ADDRESS
DECODE
13
IN
S
E
CONTROL
LOGIC
16,384-BIT
MEMORY ARRAY
I/O CONTROL
D
OUT
2981 drw 01
FEBRUARY 2001
©2000 Integrated Device Technology, Inc.
1
DSC-2981/08
IDT6167SA/LA
D
,
CMOS Static RAM 16K (16K x 1-Bit) Military and Commercial Temperature Ranges
Pin Configurations
A
0
1
A
1
2
A
2
3
A
3
4
5
6
7
8
9
10
P20-1
D20-1
A
A
A
OUT
WE
GND
4
5
6
DIP
Top View
Pin Descriptions
20
19
18
17
16
15
14
13
12
11
V
CC
13
A
A
12
A
11
A
10
A
9
A
8
A
7
D
IN
CS
2981 drw 02
Absolute Maximum Ratings
Symbol Rating Com'l. Mil. Unit
V
TERM
A
T
T
BIAS
STG
T
T
P
I
OUT
NOTE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those
indicated in the operational sections of this specification is not implied. Exposure
to absolute maximum rating conditions for extended periods may affect
reliability.
Terminal Voltage
-0.5 to +7.0 -0.5 to +7.0 V
with Re s p e c t
to G ND
Operating
0 to +70 -55 to +125oC
Temperature
Temperature
-55 to +125 -65 to +135oC
Under Bias
Storag e Tempe rature -55 to +125 -65 to +150oC
Po we r Dis sip ati on 1. 0 1. 0 W
DC Output Current 50 50 mA
(1)
Name Description
2981 tbl 03
A
0
- A
D
CS
WE
V
D
OUT
13
CC
IN
Address Inputs
Chip Se le ct
Write Enable
Power
DATA
IN
DAT A
OUT
GND Ground
Truth Table
Mode
(1)
CS WE
Output Power
Standby H X High-Z Standby
Read L H DAT A
OUT
Active
Write L L High-Z Active
NOTE:
1. H = VIH, L = VIL, X = Don't Care.
Recommended Operating
Temperature and Supply Voltage
Grade Temperature GND Vcc
O
Military -55
Commercial 0
C to + 125OC0V 5V ± 10%
O
C to +70OC0V 5V ± 10%
2 9 81 t b l 01
2981 tbl 02
2981 tbl 06
Capacitance (TA = +25°C, f = 1.0MHz)
Symbol Parameter
C
IN
C
OUT
NOTE:
1. This parameter is determined by device characterization, but is not production
tested.
Inp ut Cap ac i tance VIN = 0V 7 pF
Outp ut Cap ac itanc e V
(1)
Conditions Max. Unit
OUT
= 0V 7 pF
2981 tbl 04
Recommended DC Operating
Conditions
Symbol Parameter Min. Typ. Max. Unit
V
CC
Supp ly Voltage 4.5 5.0 5.5 V
GND Ground 0 0 0 V
V
IH
Inp ut High Vol tage 2.2
V
IL
Inp ut Low Vo ltag e -0. 5
NOTE:
1. VIL (min.) = –3.0V for pulse width less than 20ns, once per cycle.
____
6.0 V
(1)
____
0.8 V
2981 tbl 05
2
IDT6167SA/LA
CMOS Static RAM 16K (16K x 1-Bit) Military and Commercial Temperature Ranges
DC Electrical Characteristics
(1)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC – 0.2V)
6167SA/LA15 6167SA/LA20
6167SA/LA25
Symbol Parameter Power
CC1
I
I
CC2
I
SB
I
SB1
DC Electrical Characteristics
Operating Power Supply Current
CS <
VIL, Outputs Open
CC
= Max., f = 0
V
(3)
Dynamic Operating Current
VIL, Outputs Open
CS <
V
CC
= Max., f = f
MAX
(3)
Standby Power Supply Current (TTL Level)
CS >
VIH, Outputs Open
V
CC
= Max ., f = f
MAX
(3)
Full Standby Power Supply Curre nt (CMOS Level)
CS >
VHC, VCC = Max.,
V
IN
> VHC or VIN < VLC, f = 0
(3)
(1)
(con't.)
(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC – 0.2V)
6167SA/LA35
Symbol Parameter Power
I
CC1
Operating Power Supply Current
CS < V
IL
CC
= Max., f = 0
V
, Outputs Ope n
(3)
SA 90 90 90 90 mA
LA 60 60 60 60
Com'l. Com'l.
Com'l. Mil.
SA 90 90 90 90
LA 55 55 55 60
SA 120 100 100 100
LA 100 80 70 75
SA 50 35 35 35
LA 35 30 25 25
SA 5 5 5 10
LA 0.9 0.05 0.05 0.9
(2)
6167SA/LA45
(2)
6167SA/LA55
(2)
6167SA/LA70
Unit
mA
mA
mA
mA
2981 tb l 07
(2)
UnitMil. Mil. Mil. Mil.
CC2
I
SB
I
I
SB1
NOTES:
1. All values are maximum guaranteed values.
2. –55°C to +125°C temperature range only. Also available; 85ns and 100ns Military devices.
3. fMAX = 1/tRC, only address inputs cycling at fMAX. f = 0 means no address inputs change.
Dynamic Operating Current
CS < V
IL
CC
= Max ., f = f
V
, Outputs Ope n
MAX
(3)
Standby Power Supply Current
(TTL Le ve l )
CS >
VIH, Outputs Ope n
V
CC
= Max ., f = f
MAX
(3)
Full Stand by Po wer Supply
Current (CMOS Le v e l)
VHC, VCC = Max.,
CS >
V
IN
> VHC or VIN < VLC, f = 0
SA 100 100 100 100 mA
LA 70 65 60 60
SA 35 35 35 35
LA 20 20 20 15
SA 10 10 10 10
(3)
LA 0.9 0.9 0.9 0.9
mA
mA
2981 tbl 08
6.42
3
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