Integrated Device Technology Inc IDT54827CL, IDT54827CLB, IDT54827CP, IDT54827CPB, IDT54827CSO Datasheet

Integrated Device Technology, Inc.

MILITARY AND COMMERCIAL TEMPERATURE RANGES MAY 1992

1992 Integrated Device Technology, Inc. 7.20 DSC-4612/2



FEATURES:

• Faster than AMD’s Am29827 series

• Equivalent to AMD’s Am29827 bipolar buffers in pinout/
function, speed and output drive over full temperature
and voltage supply extremes

• IDT54/74FCT827A equivalent to FAST

• IDT54/74FCT827B 35% faster than FAST

• IDT54/74FCT827C 45% faster than FAST

•IOL = 48mA (commercial), and 32mA (military)

• Clamp diodes on all inputs for ringing suppression

• CMOS power levels (1mW typ. static)

• TTL input and output level compatible

• CMOS output level compatible

• Substantially lower input current levels than AMD’s
bipolar Am29800 series (5µA max.)

• Product available in Radiation Tolerant and Radiation
Enhanced versions

• Military product compliant to MIL-STD-883, Class B

DESCRIPTION:

The IDT54/74FCT800 series is built using an advanced

dual metal CMOS technology.

The IDT54/74FCT827A/B/C 10-bit bus drivers provide
high-performance bus interface buffering for wide data/ ad­dress paths or buses carrying parity. The 10-bit buffers have
NAND-ed output enables for maximum control flexibility.

All of the IDT54/74FCT800 high-performance interface
family are designed for high-capacitance load drive capability,
while providing low-capacitance bus loading at both inputs
and outputs. All inputs have clamp diodes and all outputs are
designed for low-capacitance bus loading in high-impedance
state.

IDT54/74FCT827A
IDT54/74FCT827B
IDT54/74FCT827C

D0

Y0

D1

Y1

D2

Y2

D3

Y3

D4

Y4

D5

Y5

D6

Y6

D7

Y7

D8

Y8

D9

Y9

OE1 OE2

2609 drw 01

HIGH-PERFORMANCE
CMOS BUFFERS

The IDT logo is a registered trademark of Integrated Device Technology, Inc.
FAST is a trademark of National Semiconductor Co.

FUNCTIONAL BLOCK DIAGRAM

PRODUCT SELECTOR GUIDE

2609 tbl 01

1

10-Bit Buffer

Non-inverting IDT54/74FCT827A/B/C

7.20 2

IDT54/74FCT827A/B/C
HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES

LOGIC SYMBOLPIN CONFIGURATIONS

PIN DESCRIPTION FUNCTION TABLE

(1)

NOTE: 2609 tbl 03

1. H = HIGH, L = LOW, X = Don’t Care, Z = High Impedance

2609 tbl 02

ABSOLUTE MAXIMUM RATINGS

(1)

CAPACITANCE (TA = +25°C, f = 1.0MHz)

NOTES: 2609 tbl 04

1. Stresses greater than those listed under ABSOLUTE MAXIMUM
RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other
conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating con­ditions for extended periods may affect reliability. No terminal voltage may
exceed V

CC by +0.5V unless otherwise noted.

2. Input and VCC terminals only.

3. Outputs and I/O terminals only.

Symbol Parameter

(1)

Conditions Typ. Max. Unit

CIN Input

Capacitance

VIN = 0V 6 10 pF

COUT Output

Capacitance

VOUT = 0V 8 12 pF

NOTE: 2609 tbl 05

1. This parameter is measured at characterization but not tested.

DIP/CERPACK/SOIC

TOP VIEW

LCC

TOP VIEW

Symbol Rating Commercial Military Unit

VTERM

(2)

Terminal Voltage
with Respect to
GND

–0.5 to +7.0 –0.5 to +7.0 V

VTERM

(3)

Terminal Voltage
with Respect to
GND

–0.5 to V

CC –0.5 to VCC V

TA Operating

Temperature

0 to +70 –55 to +125 °C

TBIAS Temperature

Under Bias

–55 to +125 –65 to +135 °C

TSTG Storage

Temperature

–55 to +125 –65 to +150 °C

PT Power Dissipation 0.5 0.5 W
IOUT DC Output

Current

120 120 mA

OE1

D0-9 Y0-9

10

OE2

OE1

D0
D1
D2
D3
D4
D5
D6
D7

GND

Y

0

Y1
Y2
Y3
Y4

Y6

Y5

Y7

VCC1
2
3
4
5
6
7
8
9
10

13

14

15

16

17

18

19

20

P24-1
D24-1
E24-1

&

SO24-2

11
12

21

22

23

24

D

8

D9

Y8

Y9

INDEX

D2

Y2
Y3
Y4
NC
Y

5

OE

1

D

1

NC

V

CCY0

D

8

GND

OE

2

Y

9

Y

8

32

20
19

1

4

5
6
7
8

1817161514

9
10

11

1213

L28-1

D3
D4

NC

D

5

D6
D7

D

0

Y

1

Y6
Y7

21

22

23

24

25

262728

D

9

NC

OE2

10

2609 drw 02

2609 drw 03

2609 drw 04

Name I/O Description

OE

I I When both are LOW, the outputs are

enabled. When either one or both are
HIGH, the outputs are High Z.

DI I 10-bit data input.
YI O 10-bit data output.

Inputs Output

OE

OE

1

OE

OE

2 DI YI Function

L
L

L
L

L

H

L

H

Transparent

H
X

X
H

X
X

Z
Z

Three-State

IDT54/74FCT827A/B/C
HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES

7.20 3

DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE

Following Conditions Apply Unless Otherwise Specified: VLC = 0.2V; VHC = VCC – 0.2V
Commercial: TA = 0°C to +70°C, VCC = 5.0V ± 5%; Military: TA = –55°C to +125°C, VCC = 5.0V ± 10%

NOTES: 2609 tbl 06

1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.

2. Typical values are at V

CC = 5.0V, +25°C ambient and maximum loading.

3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.

4. This parameter is guaranteed but not tested.

Symbol Parameter Test Conditions

(1)

Min. Typ.

(2)

Max. Unit

VIH Input HIGH Level Guaranteed Logic HIGH Level 2.0 — — V
VIL Input LOW Level Guaranteed Logic LOW Level — — 0.8 V
II H Input HIGH Current VCC = Max. VI = VCC —— 5µA

VI = 2.7V — — 5

(4)

II L Input LOW Current VI = 0.5V — — –5

(4)

VI = GND — — –5

IOZH Off State (High Impedance) VCC = Max. VO = VCC ——10µA

Output Current VO = 2.7V — — 10

(4)

IOZL VO = 0.5V — — –10

(4)

VO = GND — — –10
VIK Clamp Diode Voltage VCC = Min., IN = –18mA — –0.7 –1.2 V
IOS Short Circuit Current VCC = Max.

(3)

, VO = GND –75 –120 — mA

VOH Output HIGH Voltage VCC = 3V, VIN = VLC or VHC, IOH = –32µAVHC VCC —V

VCC = Min. IOH = –300µA VHC VCC —

VIN = VIH or VIL IOH = –15mA MIL. 2.4 4.3 —

IOH = –24mA COM'L. 2.4 4.3 —
VOL Output LOW Voltage VCC = 3V, VIN = VLC or VHC, IOL = 300µA — GND VLC V

VCC = Min. IOL = 300µA — GND VLC

(4)

VIN = VIH or VIL IOL = 32mA MIL. — 0.3 0.5

IOL = 48mA COM'L. — 0.3 0.5

7.20 4

IDT54/74FCT827A/B/C
HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES

POWER SUPPLY CHARACTERISTICS VLC = 0.2V; VHC = VCC – 0.2V

NOTES: 2609 tbl 07

1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.

2. Typical values are at V

CC = 5.0V, +25°C ambient.

3. Per TTL driven input (V

IN = 3.4V); all other inputs at VCC or GND.

4. This parameter is not directly testable, but is derived for use in Total Power Supply calculations.

5. Values for these conditions are examples of the I

CC formula. These limits are guaranteed but not tested.

6. I

C = IQUIESCENT + IINPUTS + IDYNAMIC

IC = ICC + ∆ICC DHNT + ICCD (fCP/2 + fiNi)
I

CC = Quiescent Current

∆I

CC = Power Supply Current for a TTL High Input (VIN = 3.4V)

D

H = Duty Cycle for TTL Inputs High

N

T = Number of TTL Inputs at DH

ICCD = Dynamic Current Caused by an Input Transition Pair (HLH or LHL)
f

CP = Clock Frequency for Register Devices (Zero for Non-Register Devices)

f

i = Input Frequency

N

i = Number of Inputs at fi

All currents are in milliamps and all frequencies are in megahertz.

Symbol Parameter Test Conditions

(1)

Min. Typ.

(2)

Max. Unit

ICC

Quiescent Power Supply Current VCC = Max.

V

IN ≥ VHC; V IN ≤ VLC

— 0.2 1.5 mA

∆ICC

Quiescent Power Supply Current
TTL Inputs HIGH

VCC = Max.
V

IN = 3.4V

(3)

— 0.5 2.0 mA

ICCD Dynamic Power Supply Current

(4)

VCC = Max.
Outputs Open

OE

1 = OE2 = GND

One Input Toggling
50% Duty Cycle

V

IN ≥ VHC

VIN ≤ VLC

— 0.15 0.25 mA/

MHz

IC Total Power Supply Current

(6)

VCC = Max.
Outputs Open
fi = 10MHz

VIN ≥ VHC

VIN ≤ VLC

(FCT)

— 1.7 4.0 mA

50% Duty Cycle

OE

1 = OE2 = GND

One Bit Toggling

V

IN = 3.4V

V

IN = GND

— 2.0 5.0

VCC = Max.
Outputs Open
fi = 2.5MHz

VIN ≥ VHC

VIN ≤ VLC

(FCT)

— 3.2 6.5

(5)

50% Duty Cycle

OE

1 = OE2 = GND

Eight Bits Toggling

V

IN = 3.4V

V

IN = GND

— 5.2 14.5

(5)

IDT54/74FCT827A/B/C
HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES

7.20 5

SWITCHING CHARACTERISTICS OVER OPERATING RANGE

NOTES: 2609 tbl 08

1. See test circuit and waveforms.

2. Minimum limits are guaranteed but not tested on Propagation Delays.

3. These parameters are guaranteed but not tested.

IDT54/74FCT827A IDT54/74FCT827B IDT54/74FCT827C

Com'l. Mil. Com'l. Mil. Com'l. Mil.

Parameter Description Conditions

(1)

Min.

(2)

Max. Min.

(2)

Max. Min.

(2)

Max. Min.

(2)

Max. Min.

(2)

Max. Min.

(2)

Max.

Unit

t

PLH

t

PHL

Propagation Delay
D

I

to Y

I

CL = 50pF
R

L

= 500

Ω

1.5 8.0 1.5 9.0 1.5 5.0 1.5 6.5 1.5 4.4 1.5 5.0 ns

CL = 300pF

(3)

RL = 500

Ω

1.5 15.0 1.5 17.0 1.5 13.0 1.5 14.0 1.5 10.0 1.5 11.0

t

PZH

t

PZL

Output Enable Time

OE

I

to Y

I

CL = 50pF
R

L

= 500

Ω

1.5 12.0 1.5 13.0 1.5 8.0 1.5 9.0 1.5 7.0 1.5 8.0 ns

CL = 300pF

(3)

RL = 500

Ω

1.5 23.0 1.5 25.0 1.5 15.0 1.5 16.0 1.5 14.0 1.5 15.0

t

PHZ

t

PLZ

Output Disable Time

OE

I

to Y

I

CL = 5pF

(3)

RL = 500

Ω

1.5 9.0 1.5 9.0 1.5 6.0 1.5 7.0 1.5 5.7 1.5 6.7 ns

CL = 50pF
R

L

= 500

Ω

1.5 10.0 1.5 10.0 1.5 7.0 1.5 8.0 1.5 6.0 1.5 7.0

7.20 6

IDT54/74FCT827A/B/C
HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES

TEST CIRCUITS AND WAVEFORMS
TEST CIRCUITS FOR ALL OUTPUTS

ENABLE AND DISABLE TIMESPROPAGATION DELAY

SET-UP, HOLD AND RELEASE TIMES PULSE WIDTH

Pulse

Generator

DATA

INPUT

TIMING

INPUT

ASYNCHRONOUS CONTROL

PRESET

CLEAR

ETC.

SYNCHRONOUS CONTROL

PRESET

CLEAR

CLOCK ENABLE

ETC.

3V

1.5V
0V

3V

1.5V
0V

3V

1.5V
0V

3V

1.5V
0V

t

SU

t

H

t

REM

H

tSU

RT

D.U.T.

VCC

VIN

CL

VOUT

50pF

500Ω

500Ω

7.0V

SAME PHASE

INPUT TRANSITION

3V

1.5V
0V

1.5V

V

OH

V

OL

t

PLH

t

PHL

OUTPUT

OPPOSITE PHASE

INPUT TRANSITION

CONTROL

INPUT

3V

1.5V
0V

3.5V

0V

OUTPUT

NORMALLY

LOW

OUTPUT

NORMALLY

HIGH

SWITCH
CLOSED

SWITCH
OPEN

V

OL

V

OH

3V

1.5V
0V

t

PLH

t

PHL

0.3V

0.3V

t

PLZ

t

PZL

t

PZH

t

PHZ

3.5V

0V

1.5V

1.5V

ENABLE DISABLE

HIGH-LOW-HIGH

PULSE

LOW-HIGH-LOW

PULSE

t

W

1.5V

1.5V

t

NOTES 2609 drw 11

1. Diagram shown for input Control Enable-LOW and input Control
Disable-HIGH.

2. Pulse Generator for All Pulses: Rate ≤ 1.0 MHz; Z

O ≤ 50Ω; tF ≤ 2.5ns;

t

R ≤ 2.5ns.

SWITCH POSITION

Test Switch

Open Drain

Disable Low Closed

Enable Low

All Other Tests Open

DEFINITIONS: 2609 tbl 09

CL = Load capacitance: includes jig and probe capacitance.
R

T = Termination resistance: should be equal to ZOUT of the Pulse

Generator.

IDT54/74FCT827A/B/C
HIGH-PERFORMANCE CMOS BUFFERS MILITARY AND COMMERCIAL TEMPERATURE RANGES

7.20 7

ORDERING INFORMATION

2609 cnv* 10

IDTXXFCT

XX

Device TypeXPackage

X

Process

Blank
B

P
D
E
L
SO

827A
827B
827C

Commercial
MIL-STD-883, Class B

Plastic DIP
CERDIP
CERPACK
Leadless Chip Carrier
Small Outline IC

Non-Inverting 10-Bit Buffer
Fast Non-Inverting 10-Bit Buffer
Super Fast Non-Inverting 10-Bit Buffer

54
74

–55

°C to +125°C

0

°C to +70°C