Integrated Device Technology Inc IDT49FCT805AD, IDT49FCT805ADB, IDT49FCT805AE, IDT49FCT805AEB, IDT49FCT805AL Datasheet
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Integrated Device Technology, Inc.
FAST CMOS
BUFFER/CLOCK DRIVER
IDT49FCT805/A
IDT49FCT806/A
FEATURES:
• 0.5 MICRON CMOS Technology
• Guaranteed low skew < 700ps (max.)
• Low duty cycle distortion < 1ns (max.)
• Low CMOS power levels
• TTL compatible inputs and outputs
• Rail-to-rail output voltage swing
• High drive: -24mA I
• Two independent output banks with 3-state control
• 1:5 fanout per bank
• ‘Heartbeat’ monitor output
• Available in DIP, SOIC, SSOP (805 only), QSOP (805
OH, 64mA IOL
DESCRIPTION:
The IDT49FCT805/A and IDT49FCT806/A are clock
drivers built using advanced dual metal CMOS technology.
The IDT49FCT805/A is a non-inverting clock driver and the
IDT49FCT806/A is an inverting clock driver. Each device
consists of two banks of drivers. Each bank drives five output
buffers from a standard TTL compatible input. The devices
feature a "heartbeat" monitor for diagnostics and PLL driving.
The MON output is identical to all other outputs and complies
with the output specifications in this document. The
IDT49FCT805/A and IDT49FCT806/A offer low capacitance
inputs with hysteresis. Rail-to-rail output swing improves
noise margin and allows easy interface with CMOS inputs.
only), Cerpack and LCC packages
• Military product compliant to MIL-STD-883, Class B
FUNCTIONAL BLOCK DIAGRAMS
IDT49FCT805 IDT49FCT806
OEA
OEA
INA
INB
OEB
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
5
5
OA1-OA5
OB1-OB5
MON
2574 drw 01
INA
INB
OEB
5
OA1-OA5
5
OB1-OB5
MON
2574 drw 02
MILITARY AND COMMERCIAL TEMPERATURE RANGES SEPTEMBER 1996
1996 Integrated Device Technology, Inc. 9.1 DSC-2574/10
1
IDT49FCT805/806/A
FAST CMOS BUFFER/CLOCK DRIVER MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
IDT49FCT805
V
CCA
OA1
OA2
OA3
GNDA
OA4
OA5
NC
OEA
INA
(1)
1
2
3
4
5
6
7
8
9
10
P20-1
D20-1
SO20-2
SO20-7
SO20-8
&
E20-1
20
19
18
17
16
15
14
13
12
11
VCCB
OB1
OB2
OB3
GNDB
OB4
OB5
MON
OEB
B
IN
INDEX
GND
NC
OA
OA
OA
(1)
OA2OA1V
3 2 20 19
4
3
A
5
4
6
5
7
1
L20-2
8
910111213
AINAINBOEB
OE
LCC
TOP VIEW
CCAVCCB
1
OB
18
17
16
15
14
MON
OB
OB
GND
OB
OB
2574 drw 04
2
3
B
4
5
DIP/SOIC/SSOP/QSOP/CERPACK
TOP VIEW
2574 drw 03
IDT49FCT806
CCA
V
OA1
OA
OA3
GNDA
OA4
OA5
NC
OEA
INA
(1)
1
2
2
3
4
P20-1
5
6
D20-1
SO20-2
&
E20-1
7
8
9
10 11
DIP/SOIC/CERPACK
TOP VIEW
20
19
18
17
16
15
14
13
12
VCCB
OB1
OB2
OB3
GNDB
OB4
OB5
MON
OEB
B
IN
2574 drw 05
PIN DESCRIPTION
Pin Names Description
OEA,
OE
B
INA, IN
B
OAn, OB
OAn,
OB
n
n
MON Monitor Output (FCT805)
MON
NOTE:
1. Pin 8 is not internally connected on devices with a "K" prefix in the date
code. On older devices, pin 8 is internally connected to GND. To insure
compatibility with all products, pin 8 should be connected to GND at the
board level.
3-State Output Enable Inputs (Active LOW)
Clock Inputs
Clock Outputs (FCT805)
Clock Outputs (FCT806)
Monitor Output (FCT806
2574 tbl 01
INDEX
GND
NC
OA
OA
OA
1
OB
OA2OA1V
CCAVCCB
3 2 20 19
3
4
A
5
4
6
7
5
(1)
8
1
L20-2
18
17
16
15
14
OB
OB
GND
OB
OB
2
3
B
4
5
910111213
A
INAIN
OE
TOP VIEW
LCC
B
B
OE
MON
2574 drw 06
9.1 2
IDT49FCT805/806/A
FAST CMOS BUFFER/CLOCK DRIVER MILITARY AND COMMERCIAL TEMPERATURE RANGES
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Description Max. Unit
(2)
VTERM
Terminal Voltage with Respect to
–0.5 to +7.0 V
GND
(3)
VTERM
Terminal Voltage with Respect to
GND
–0.5 to
V
CC +0.5
V
TSTG Storage Temperature –65 to +150 °C
IOUT DC Output Current –60 to +120 mA
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the device. This is a stress rating only
and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is
not
implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability. No terminal voltage may exceed
CC by +0.5V unless otherwise noted.
V
2. Input and V
3. Output and I/O terminals.
CC terminals.
2574 lnk 03
CAPACITANCE (TA = +25°C, f = 1.0MHz)
Symbol Parameter
CIN Input
Capacitance
COUT Output
Capacitance
NOTE:
1. This parameter is measured at characterization but not tested.
FUNCTION TABLE
Inputs
OE
A,
OE
OE
NOTE:
1. H = HIGH, L = LOW, Z = High Impedance
B INA, INB OAn, OBn MON
OE
LLLLHH
LHHHLL
HLZLZH
HHZHZL
(1)
Conditions Typ. Max. Unit
VIN = 0V 4.5 6.0 pF
VOUT = 0V 5.5 8.0 pF
(1)
Outputs
49FCT805 49FCT806
OA
n,
OB
OA
OB
n
2574 lnk 04
MON
MON
2574 tbl 02
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified: VLC = 0.2V; VHC = VCC – 0.2V
Commercial: TA = 0°C to +70°C, VCC = 5.0V ± 5%; Military: TA = –55°C to +125°C, VCC = 5.0V ± 10%
Symbol Parameter Test Conditions
(1)
Min. Typ.
VIH Input HIGH Level Guaranteed Logic HIGH Level 2.0 — — V
VIL Input LOW Level Guaranteed Logic LOW Level — — 0.8 V
(5)
(5)
(5)
(5)
VCC = Max. VI = VCC ——±1µA
VCC = Max. VI = GND ——±1µA
VCC = Max. VO = VCC ——±1µA
VO = GND ——±1µA
II H Input HIGH Current
II L Input LOW Current
IOZH Off State (HIGH Z)
IOZL Output Current
VIK Clamp Diode Voltage VCC = Min., IIN= –18mA — –0.7 –1.2 V
IOS Short Circuit Current VCC = Max.
(3)
, VO = GND –60 –120 — mA
VOH Output HIGH Voltage VCC = 3V, VIN = VLC or VHC, IOH = –32µAVHC VCC —V
VCC = Min. IOH = –300µAVHC VCC —
VIN = VIH or VIL IOH = –12mA MIL.
I
OH = –15mA COM'L.
IOH = -24mA MIL.
IOH = -24mA COM'L.
3.6 4.3 —
2.4 3.8 —
VOL Output LOW Voltage VCC = 3V, VIN = VLC or VHC, IOL= 300µA — GND VLC V
VCC = Min. IOH = 300µA — GND VLC
VIN = VIH or VIL IOL = 48mA MIL. — 0.3 0.55
IOL = 64mA COM'L.
VH Input Hysteresis for all inputs — — 200 — mV
ICC Quiescent Power Supply Current VCC = Max., VIN = GND or VCC — 5 500 µA
NOTES: 2574 tbl 05
1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.
4. This parameter is guaranteed but not tested.
5. The test limit for this parameter is ± 5µA at T
CC = 5.0V, +25°C ambient.
A = –55°C.
(2)
Max. Unit
(4)
9.1 3
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