
INCHANGE Semiconductor
Collector-Emitter Voltage
ICCollector Current-Continuous
Total Power Dissipation
@ TC=25℃
Storage Temperature Range
isc
Silicon NPN Power Transistor
DESCRIPTION
·Silicon NPN triple diffused planar transistor
·Collector-Emitter Breakdown Voltage-
:V
= 300(V)(Min.)
(BR)CEO
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Series regulator,switch and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
2SC2023
isc website:www.iscsemi.com isc & iscsemi is registered trademark

INCHANGE Semiconductor
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
fTCurrent-Gain—Bandwidth Product
isc
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
2SC2023
NOTICE:
ISC reserves the rights to make changes of the content herein the datasheet at any time
without notification. The information contained herein is presented only as a guide for the
applications of our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in
equipment which could have applications in hazardous environments, aerospace industry, or
medical field. Please contact us if you intend our products to be used in these special
applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any
particular purpose, nor does ISC assume any liability arising from the application or use of
any products, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages.
isc website:www.iscsemi.com isc & iscsemi is registered trademark