ICSI IS62C1024-70W, IS62C1024-70TI, IS62C1024-70T, IS62C1024-55WI, IS62C1024-55TI Datasheet
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IS62C1024
A0-A16
CE1
OE
WE
512 x 2048
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
CE2
IS62C1024
128K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
• High-speed access time: 35, 45, 55, 70 ns
• Low active power: 450 mW (typical)
• Low standby power: 500 µW (typical) CMOS
standby
• Output Enable (OE) and two Chip Enable
(CE1 and CE2) inputs for ease in applications
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 5V (±10%) power supply
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ICSI IS62C1024 is a low power,131,072-word by 8-bit
CMOS static RAM. It is fabricated using ICSI's highperformance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields higher
performance and low power consumption devices.
When CE1 is HIGH or CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation can
be reduced by using CMOS input levels.
Easy memory expansion is provided by using two Chip Enable
inputs, CE1 and CE2. The active LOW Write Enable (WE)
controls both writing and reading of the memory.
The IS62C1024 is available in 32-pin 600mil DIP, 450mil SOP
and 8*20mm TSOP-1 packages.
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
Integrated Circuit Solution Inc. 1
SR016-0B
IS62C1024
PIN CONFIGURATION
32-Pin SOP and DIP
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
VCC
A15
CE2
WE
A13
A8
A9
A11
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
PIN DESCRIPTIONS
A0-A16 Address Inputs
PIN CONFIGURATION
32-Pin 8x20mm TSOP-1
A11
A9
A8
A13
WE
CE2
A15
VCC
NC
A16
A14
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE1
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
CE1 Chip Enable 1 Input
CE2 Chip Enable 2 Input
OE Output Enable Input
WE Write Enable Input
I/O0-I/O7 Input/Output
Vcc Power
GND Ground
OPERATING RANGE
Range Ambient Temperature VCC
Commercial 0°C to +70°C 5V ± 10%
Industrial –40°C to +85°C 5V ± 10%
TRUTH TABLE
Mode
WEWE
WE
WEWE
Not Selected X H X X High-Z ISB1, ISB2
(Power-down) X X L X High-Z ISB1, ISB2
Output Disabled H L H H High-Z ICC
Read H L H L DOUT ICC
Write L L H X DIN ICC
CE1CE1
CE1 CE2
CE1CE1
OEOE
OE I/O Operation Vcc Current
OEOE
2 Integrated Circuit Solution Inc.
SR016-0B
IS62C1024
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
VTERM Terminal Voltage with Respect to GND –0.5 to +7.0 V
TBIAS Temperature Under Bias –10 to +85 °C
TSTG Storage Temperature –65 to +150 °C
PT Power Dissipation 1.5 W
IOUT DC Output Current (LOW) 20 mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
CAPACITANCE
(1,2)
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 6 pF
COUT Output Capacitance VOUT = 0V 8 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A = 25°C, f = 1 MHz, Vcc = 5.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VCC = Min., IOH = –1.0 mA 2.4 — V
VOL Output LOW Voltage VCC = Min., IOL = 2.1 mA — 0.4 V
VIH Input HIGH Voltage 2.2 VCC + 0.5 V
VIL Input LOW Voltage
ILI Input Leakage GND ≤ VIN ≤ VCC Com. –5 5 µA
ILO Output Leakage GND ≤ VOUT ≤ VCC Com. –5 5 µA
Notes:
IL = –3.0V for pulse width less than 10 ns.
1. V
POWER SUPPLY CHARACTERISTICS
Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Min. Max. Unit
ICC Vcc Dynamic Operating VCC = Max., CE = VIL Com. — 150 — 135 — 120 — 90 mA
Supply Current IOUT = 0 mA, f = fMAX Ind. — 160 — 145 — 130 — 100
ISB1 TTL Standby Current VCC = Max., Com. — 40 — 40 — 40 — 40 mA
(TTL Inputs) VIN = VIH or VIL, CE1 ≥ VIH, Ind. — 60 — 60 — 60 — 60
ISB2 CMOS Standby VCC = Max., Com. — 30 — 30 — 30 — 30 mA
Current (CMOS Inputs) CE1 ≥ VCC – 0.2V, Ind. — 40 — 40 — 40 — 40
(1)
(1)
(Over Operating Range)
or CE2 ≤ VIL, f = 0
CE2 ≤ 0.2V, VIN > VCC – 0.2V,
or VIN ≤ 0.2V, f = 0
–0.3 0.8 V
Ind. –10 10
Ind. –10 10
-35 ns -45 ns -55 ns -70 ns
Notes:
1. At f = f
MAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Integrated Circuit Solution Inc. 3
SR016-0B
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