ICSI IS61LV6424-12TQ, IS61LV6424-15TQ, IS61LV6424-10TQ, IS61LV6424-9TQ Datasheet

IS61LV6424

64K x 24 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY

FEATURES

• High-speed access time: 9, 10, 12, 15 ns

• CMOS low power operation

— 594 mW (max.) operating @ 9 ns
— 36 mW (max.) CMOS standby

• TTL compatible interface levels

• Single 3.3V power supply

• Fully static operation: no clock or refresh
required

• Three state outputs

• Available in 100-pin LQFP

FUNCTIONAL BLOCK DIAGRAM

V

CC

GND

A0-A14

ROW

DECODER

DESCRIPTION

The ICSI IS61LV6424 is a high-speed, static RAM organized
as 65,536 words by 24 bits. It is fabricated using ICSI's high­performance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields ac­cess times as fast as 9 ns with low power consumption.

When CE1 is HIGH and CE2 is LOW (deselected), the device
assumes a standby mode at which the power dissipation can
be reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable and
Output Enable inputs, CE1, CE2, and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory.

The IS61LV6424 is packaged in the JEDEC standard
100-pin 14*20*1.4mm LQFP.

64K x 24

MEMORY ARRAY

A15

X/Y
V/S

CE1
CE2

OE

WE

ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.

MULTIPLEX

ADDRESS
CONTROL

CONTROL

CIRCUIT

COLUMN

DECODER

I/O DATA

CIRCUIT

I/O0-I/O23

Integrated Circuit Solution Inc. S2-95

AHSR012-0D

IS61LV6424

PIN CONFIGURATION
100-Pin LQFP

NC
NC
NC
NC

NC
I/O12
I/O13
I/O14
I/O15

GNDQ

CCQ

V
I/O16
I/O17

NC

V

NC

GND
I/O18
I/O19
V

CCQ

GNDQ

I/O20
I/O21
I/O22
I/O23

NC
NC
NC
NC
NC

A14

A15

CE1

CE2NCNCNCX/Y

99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81

100
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15

CC

16
17
18
19
20
21
22
23
24
25
26
27
28
29
30

31 32 33 34 35 36 37 38 39 40 41 42 43 44 45

V/S

VCCGNDNCWENCOENCNCNCA0

46 47 48 49 50

A1

80

NC

79

NC

78

NC

77

NC

76

NC

75

I/O11

74

I/O10

73

I/O9

72

I/O8

71

GNDQ

70

CCQ

V

69

I/O7

68

I/O6

67

GND

66

NC

65

CC

V

64

NC

63

I/O5

62

I/O4

61

CCQ

V

60

GNDQ

59

I/O3

58

I/O2

57

I/O1

56

I/O0

55

NC

54

NC

53

NC

52

NC

51

NC

A9

A12

A11

A10

A8

NC

NC

NC

A13

GND

CC

V

NC

NC

A7A6A5A4A3

A2

NC

PIN DESCRIPTIONS

A0-A14 Address Inputs

A15, X/Y Multiplexed Address

I/O0-I/O23 Data Inputs/Outputs

CE1, CE2 Chip Enable Input
OE Output Enable Input
WE Write Enable Input

V/S Address Multiplexer

NC No Connection

Vcc Power

VCCQ Isolated Output Buffer Supply

GND Ground

GNDQ solated Output Buffer Ground

S2-96 Integrated Circuit Solution Inc.

AHSR012-0D

IS61LV6424

TRUTH TABLE

Mode

Not Selected HXXXX High-Z ISB1, ISB2

Read Using X/Y LHLHH DOUT ICC
Read Using A15 L H L H L DOUT ICC
Write Using X/Y LHXLH DIN ICC
Write Using A15 L H X L L DIN ICC
Output Disable L H H H X High-Z ICC

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

VCC Power Supply Voltage Relative to GND –0.5 to 5.0 V
VTERM Terminal Voltage with Respect to GND –0.5 to Vcc + 0.5 V
TSTG Storage Temperature –65 to + 150 °C

BIAS Temperature Under Bias: Com. –10 to + 85 °C

T

PT Power Dissipation 2.0 W
IOUT DC Output Current ±20 mA

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

CE1CE1

CE1 CE2

CE1CE1

X H X X X High-Z

OEOE

WEWE

OE

WE V/

OEOE

WEWE

(1)

Ind. –45 to + 90 °C

SS

S I/O0-I/O23 Vcc Current

SS

1

2

3

4

5

6

7

OPERATING RANGE

Range Ambient Temperature VCC (9, 10 ns) VCC (12, 15 ns)

Commercial 0°C to +70°C 3.3V + 10%, – 5% 3.3V ± 10%
Industrial –40°C to +85°C 3.3V + 10%, – 5% 3.3V ± 10%

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol Parameter Test Conditions Min. Max. Unit

VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 — V

VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA — 0.4 V

VIH Input HIGH Voltage 2.2 VCC + 0.3 V

VIL Input LOW Voltage

ILI Input Leakage GND ≤ VIN ≤ VCC –1 1 µA
ILO Output Leakage GND ≤ VOUT ≤ VCC, Outputs Disabled –1 1 µA

Note:

1. V

IL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width ≤ 2.0 ns).

V

IH (max.) = VCC + 0.3V DC; VIH (max.) = VCC + 2.0V AC (pulse width ≤ 2.0 ns).

Integrated Circuit Solution Inc. S2-97

AHSR012-0D

(1)

–0.3 0.8 V

8

9

10

11

12