ICSI IS61LV3216-20TI, IS61LV3216-20T, IS61LV3216-20K, IS61LV3216-15TI, IS61LV3216-15T Datasheet
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IS61LV3216
IS61LV3216
32K x 16 LOW VOLTAGE CMOS STATIC RAM
FEATURES
• High-speed access time: 10, 12, 15, and 20 ns
• CMOS low power operation
— 150 mW (typical) operating
— 150 µW (typical) standby
• TTL compatible interface levels
• Single 3.3V ± 10% power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Industrial temperature available
• Available in 44-pin 400mil SOJ package and
44-pin TSOP-2
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ICSI IS61LV3216 is a high-speed, 512K static RAM
organized as 32,768 words by 16 bits. It is fabricated using
ICSI's high-performance CMOS technology. This highly reli-
able process coupled with innovative circuit design techniques,
yields fast access times with low power consumption.
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS61LV3216 is packaged in the JEDEC standard 44-pin
400mil SOJ and 44-pin 400mil TSOP-2.
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2
3
4
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A0-A14
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
CE
OE
WE
UB
LB
DECODER
I/O
DATA
CIRCUIT
CONTROL
CIRCUIT
7
32K x 16
MEMORY ARRAY
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9
COLUMN I/O
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11
12
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 1997, Integrated Silicon Solution Inc.
Integrated Circuit Solution Inc. 1
SR009-0B
IS61LV3216
PIN CONFIGURATIONS
44-Pin SOJ
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC
NC
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
A9
A8
A7
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44-Pin TSOP-2
NC
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
A9
A8
A7
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC
PIN DESCRIPTIONS
A0-A14 Address Inputs
I/O0-I/O15 Data Inputs/Outputs
CE Chip Enable Input
OE Output Enable Input
WE Write Enable Input
LB Lower-byte Control (I/O0-I/O7)
UB Upper-byte Control (I/O8-I/O15)
NC No Connection
Vcc Power
GND Ground
TRUTH TABLE
I/O PIN
Mode
WEWE
WE
WEWE
Not Selected X H X X X High-Z High-Z ISB1, ISB2
Output Disabled H L H X X High-Z High-Z ICC
X L X H H High-Z High-Z
Read H L L L H DOUT High-Z ICC
H L L H L High-Z DOUT
HLLLL DOUT DOUT
Write L L X L H DIN High-Z ICC
L L X H L High-Z DIN
LLXLL DIN DIN
CECE
CE
CECE
OEOE
OE
OEOE
LBLB
LB
LBLB
UBUB
UB I/O0-I/O7 I/O8-I/O15 Vcc Current
UBUB
2 Integrated Circuit Solution Inc.
SR009-0B
IS61LV3216
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VCC Supply Voltage with Respect to GND –0.5 to +4.6 V
VTERM Terminal Voltage with Respect to GND –0.5 to Vcc + 0.5 V
TSTG Storage Temperature –65 to +150 °C
PT Power Dissipation 1.0 W
IOUT DC Output Current (LOW) 20 mA
OPERATING RANGE
Range Ambient Temperature VCC
Commercial 0°C to +70°C 3.3V ± 10%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 — V
VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA — 0.4 V
(1)
Note:
1. Stress greater than those listed under
ABSOLUTE MAXIMUM RATINGS
may cause permanent damage to the
device. This is a stress rating only and
functional operation of the device at
these or any other conditions above
those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
1
2
3
4
5
VIH Input HIGH Voltage 2.2 VCC + 0.3 V
VIL Input LOW Voltage
ILI Input Leakage GND ≤ VIN ≤ VCC –2 2 µA
ILO Output Leakage GND ≤ VOUT ≤ VCC, Outputs Disabled –2 2 µA
Notes:
1. VIL (min.) = –3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS
Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Min. Max. Unit
ICC Vcc Dynamic Operating VCC = Max., Com. — 220 — 200 — 180 — 160 mA
Supply Current IOUT = 0 mA, f = fMAX Ind. — — — 230 — 200 — 180
ISB1 TTL Standby Current VCC = Max., Com. — 10 — 10 — 10 — 10 mA
(TTL Inputs) VIN = VIH or VIL Ind. — — — 20 — 20 — 20
ISB2 CMOS Standby VCC = Max., Com. — 5 — 5 — 5 — 5 mA
Current (CMOS Inputs) CE ≥ VCC – 0.2V, Ind. — — — 10 — 10 — 10
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
(1)
CE ≥ VIH , f = 0
VIN ≥ VCC – 0.2V, or
VIN ≤ 0.2V, f = 0
(1)
(Over Operating Range)
-10 ns -12 ns -15 ns -20 ns
–0.3 0.8 V
6
7
8
9
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12
Integrated Circuit Solution Inc. 3
SR009-0B
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