ICSI IS61LV12824-8B, IS61LV12824-12B, IS61LV12824-9B, IS61LV12824-10B Datasheet
FEATURES
• High-speed access time: 8, 9, 10, 12 ns
• CMOS low power operation
— 720 mW (typical) operating @ 9 ns
— 36 mW (typical) standby @ 9 ns
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Available in 119-pin 14x22mm PBGA
DESCRIPTION
The ICSI IS61LV12824 is a high-speed, static RAM organized
as 131,072 words by 24 bits. It is fabricated using ICSI's highperformance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.
When CE1, CE2 are HIGH and CE2 is LOW (deselected), the
device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs, CE1, CE2, CE2 and OE. The active
LOW Write Enable (WE) controls both writing and reading of
the memory.
The IS61LV12824 is packaged in the JEDEC standard
119-pin 14*22mm PBGA.
FUNCTIONAL BLOCK DIAGRAM
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
A0-A16
CE1
OE
WE
128K x 24
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
CE2
CE2
I/O0-I/O23
IS61LV12824
128K x 24 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
Integrated Circuit Solution Inc. 1
SR021-0B
IS61LV12824
128K x 24 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
IS61LV12824
2 Integrated Circuit Solution Inc.
SR021-0B
PIN DESCRIPTIONS
A0-A16 Address Inputs
I/O0-I/O23 Data Inputs/Outputs
CE1, CE2 Chip Enable Input LOW
CE2 Chip Enable Input HIGH
OE Output Enable Input
WE Write Enable Input
NC No Connection
Vcc Power
VCCQ I/O Power
GND Ground
PIN CONFIGURATION
119-pin 14x22mm PBGA
1234567
A NC A11 A14 A15 A16 A4 NC
B NC A12 A13 CE1 A5 A3 NC
C I/O16 NC CE2 NC CE2 NC I/O0
D I/O17 VCCQ GND GND GND VCCQ I/O1
E I/O18 GND VCC GND VCC GND I/O2
F I/O19 VCCQ GND GND GND VCCQ I/O3
G I/O20 GND VCC GND VCC GND I/O4
H I/O21 VCCQ GND GND GND VCCQ I/O5
J VCCQ GND VCC GND VCC GND VCCQ
K I/O22 VCCQ GND GND GND VCCQ I/O6
L I/O23 GND VCC GND VCC GND I/O7
M I/O12 VCCQ GND GND GND VCCQ I/O8
N I/O13 GND VCC GND VCC GND I/O9
P I/O14 VCCQ GND GND GND VCCQ I/O10
R I/O15NCNCNCNCNCI/O11
T NC A10 A8 WE A0 A1 NC
U NC A9 A7 OE A6 A2 NC
IS61LV12824
Integrated Circuit Solution Inc. 3
SR021-0B
1
2
3
4
5
6
7
8
9
10
11
12
OPERATING RANGE
Range Ambient Temperature VCC (8, 9, 10 ns) VCC (12 ns)
Commercial 0°C to +70°C 3.3V + 10%, – 5% 3.3V ± 10%
Industrial –40°C to +85°C 3.3V + 10%, – 5% 3.3V ± 10%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 — V
VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA — 0.4 V
VIH Input HIGH Voltage 2.2 VCC + 0.3 V
VIL Input LOW Voltage
(1)
–0.3 0.8 V
ILI Input Leakage GND ≤ VIN ≤ VCC –1 1 µA
ILO Output Leakage GND ≤ VOUT ≤ VCC, Outputs Disabled –1 1 µA
Note:
1. V
IL (min.) = –0.3V DC; VIL (min.) = –2.0V AC (pulse width ≤ 2.0 ns).
VIH (max.) = VCC + 0.3V DC; VIH (max.) = VCC + 2.0V AC (pulse width ≤ 2.0 ns).
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
VCC Power Supply Voltage Relative to GND –0.5 to 5.0 V
VTERM Terminal Voltage with Respect to GND –0.5 to Vcc + 0.5 V
TSTG Storage Temperature –65 to + 150 °C
TBIAS Temperature Under Bias: Com. –10 to + 85 °C
Ind. –45 to + 90 °C
PT Power Dissipation 2.0 W
IOUT DC Output Current ±20 mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or
any other conditions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
TRUTH TABLE
Mode
WEWE
WEWE
WE
CE1CE1
CE1CE1
CE1 CE2
CE2CE2
CE2CE2
CE2
OEOE
OEOE
OE I/O0-I/O23 Vcc Current
Not Selected X H X X X High-Z ISB1, ISB2
Output Disabled H L H L H High-Z ICC
X L H L X High-Z
Read H L H L L DOUT 1CC
H L H L H High-Z
Write L L H L X D
IN ICC
LLHLH HIHG-Z
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