ICSI IS61C6416-12KI, IS61C6416-12K, IS61C6416-10T, IS61C6416-10K, IS61C6416-20TI Datasheet
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IS61C6416
64K x 16 HIGH-SPEED CMOS STATIC RAM
FEATURES
• High-speed access time: 10, 12, 15, and 20 ns
• CMOS low power operation
— 1650 mW (max) @ -10ns Cycle
— 55 µW (max) CMOS Standby
• TTL compatible interface levels
• Single 5V ± 10% power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Industrial temperature available
• Available in 44-pin SOJ package and
44-pin TSOP-2
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ICSI IS61C6416 is a high-speed, 1,048,576-bit static
RAM organized as 65,536 words by 16 bits. It is fabricated
using ICSI's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields access times as fast as 10 ns with low power
consumption.
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS61C6416 is packaged in the JEDEC standard 44-pin
400mil SOJ and 44-pin 400mil TSOP-2.
A0-A15
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
CE
OE
WE
UB
LB
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
DECODER
I/O
DATA
CIRCUIT
CONTROL
CIRCUIT
64K x 16
MEMORY ARRAY
COLUMN I/O
Integrated Circuit Solution Inc. 1
SR012-0B
IS61C6416
PIN CONFIGURATIONS
44-Pin SOJ
A15
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
A9
A8
A7
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC
44-Pin TSOP-2
A15
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
A9
A8
A7
NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC
PIN DESCRIPTIONS
A0-A15 Address Inputs
I/O0-I/O15 Data Inputs/Outputs
CE Chip Enable Input
OE Output Enable Input
WE Write Enable Input
LB Lower-byte Control (I/O0-I/O7)
UB Upper-byte Control (I/O8-I/O15)
NC No Connection
Vcc Power
GND Ground
TRUTH TABLE
I/O PIN
Mode
WEWE
WE
WEWE
Not Selected X H X X X High-Z High-Z ISB1, ISB2
Output Disabled H L H X X High-Z High-Z ICC1, ICC2
X L X H H High-Z High-Z
Read H L L L H DOUT High-Z ICC1, ICC2
H L L H L High-Z DOUT
HLLLL DOUT DOUT
Write L L X L H DIN High-Z ICC1, ICC2
L L X H L High-Z DIN
LLXLL DIN DIN
CECE
CE
CECE
OEOE
OE
OEOE
LBLB
LB
LBLB
UBUB
UB I/O0-I/O7 I/O8-I/O15 Vcc Current
UBUB
2 Integrated Circuit Solution Inc.
SR012-0B
IS61C6416
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VTERM Terminal Voltage with Respect to GND –0.5 to +7.0 V
TSTG Storage Temperature –65 to +150 °C
PT Power Dissipation 1.5 W
I
OUT DC Output Current (LOW) 20 mA
OPERATING RANGE
Range Ambient Temperature Speed VCC
Commercial 0°C to +70°C -10, -12 5V ± 5%
Industrial –40°C to +85°C -12 5V ± 5%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 — V
VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA — 0.4 V
(1)
-15, -20 5V ± 10%
-15, -20 5V ± 10%
IOH = –100 µA — 3.95
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress
rating only and functional operation of the
device at these or any other conditions above
those indicated in the operational sections of
this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
1
2
3
4
5
6
VIH Input HIGH Voltage 2.2 VCC + 0.5 V
VIL Input LOW Voltage
ILI Input Leakage GND ≤ VIN ≤ VCC –2 2 µA
ILO Output Leakage GND ≤ VOUT ≤ VCC, Outputs Disabled –2 2 µA
Notes:
IL (min.) = –3.0V for pulse width less than 10 ns.
1. V
POWER SUPPLY CHARACTERISTICS
Symbol Parameter Test Conditions Min. Max. Min. Max. Min. Max. Min. Max. Unit
ICC Vcc Dynamic Operating VCC = Max., Com. — 300 — 280 — 260 — 235 mA
Supply Current IOUT = 0 mA, f = MAX Ind. — — — 300 — 290 — 255
ISB1 TTL Standby Current VCC = Max., Com. — 50 — 50 — 50 — 50 mA
(TTL Inputs) VIN = VIH or VIL Ind. — — — 55 — 55 — 55
ISB2 CMOS Standby VCC = Max., Com. — 10 — 10 — 10 — 10 mA
Current (CMOS Inputs) CE ≥ VCC – 0.2V, Ind. — — — 15 — 15 — 15
(1)
CE ≥ VIH , f = 0
VIN ≥ VCC – 0.2V, or
VIN ≤ 0.2V, f = 0
(1)
(Over Operating Range)
-10 -12 -15 -20
–0.5 0.8 V
7
8
9
10
11
12
Note:
1. At f = f
Integrated Circuit Solution Inc. 3
SR012-0B
MAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
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