ICSI IC62LV256L-15JI, IC62LV256L-15T, IC62LV256L-15TI, IC62LV256L-20J, IC62LV256L-20JI Datasheet

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IC62LV256L
Document Title
32K x 8 Low Power SRAM with 3.3V
Revision History
Revision No History Draft Date Remark
0A Initial Draft October 5,2001
Integrated Circuit Solution Inc. 1
ALSR008-0A 10/5/2001
IC62LV256L
32K x 8 LOW VOLTAGE CMOS STATIC RAM
FEATURES
• High-speed access time: 15, 20, 25 ns
• Automatic power-down when chip is deselected
• CMOS low power operation — 255 mW (max.) operating — 0.18 mW (max.) CMOS standby
• TTL compatible interface levels
• Single 3.3V power supply
• Fully static operation: no clock or refresh required
• Three-state outputs
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ICSI IC62LV256L is a very high-speed, low power, 32,768-word by 8-bit static RAM. It is fabricated using ICSI's high-performance CMOS technology. This highly reliable pro­cess coupled with innovative circuit design techniques, yields access times as fast as 15 ns maximum.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation is reduced to 50 µW (typical) with CMOS input levels.
Easy memory expansion is provided by using an active LOW Chip Enable (CE). The active LOW Write Enable (WE) controls both writing and reading of the memory.
The IC62LV256L is available in the JEDEC standard 28-pin 300mil SOJ and the 8*13.4mm TSOP-1 package.
A0-A14
VCC
GND
I/O0-I/O7
CE OE WE
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
DECODER
I/O
DATA
CIRCUIT
CONTROL
CIRCUIT
256 X 1024
MEMORY ARRAY
COLUMN I/O
2 Integrated Circuit Solution Inc.
ALSR008-0A 10/5/2001
IC62LV256L
PIN CONFIGURATION
28-Pin SOJ
A7 A6 A5 A4 A3 A2 A1 A0
1 2 3 4 5 6 7 8 9 10 11 12 13 14
A14 A12
I/O0 I/O1 I/O2
GND
PIN DESCRIPTIONS
28 27 26 25 24 23 22 21 20 19 18 17 16 15
VCC WE A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3
PIN CONFIGURATION
8x13.4mm TSOP-1
OE
A11
A9 A8
A13
WE
VCC
A14 A12
A7 A6 A5 A4 A3
TRUTH TABLE
22 23 24 25 26 27 28 1 2 3 4 5 6 7
21 20 19 18 17 16 15 14 13 12 11 10
A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0
9
A1
8
A2
A0-A14 Address Inputs
CE Chip Enable Input OE Output Enable Input WE Write Enable Input
I/O0-I/O7 Input/Output
Mode
WEWE
WE
WEWE
Not Selected X H X High-Z ISB1, ISB2 (Power-down)
Output Disabled H L H High-Z ICC1, ICC2 Read H L L DOUT ICC1, ICC2 Write L L X DIN ICC1, ICC2
CECE
OEOE
CE
OE I/O Operation Vcc Current
CECE
OEOE
Vcc Power GND Ground
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
VTERM Terminal Voltage with Respect to GND –0.5 to +4.6 V TBIAS Temperature Under Bias –55 to +125 °C TSTG Storage Temperature –65 to +150 °C PT Power Dissipation 0.5 W IOUT DC Output Current (LOW) 20 mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Integrated Circuit Solution Inc. 3
ALSR008-0A 10/5/2001
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