ICSI IC61LV12816-10T, IC61LV12816-10TI, IC61LV12816-12B, IC61LV12816-12BI, IC61LV12816-12K Datasheet
...
IC61LV12816
Document Title
128K x 16 Hight Speed SRAM with 3.3V
Revision History
Revision No History Draft Date Remark
0A Initial Draft September 12,2001
1
2
3
4
5
6
7
8
9
10
11
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
Integrated Circuit Solution, Inc. 1
AHSR024-0A 09/12/2001
12
IC61LV12816
128K x 16 HIGH-SPEED CMOS STATIC RAM
WITH 3.3V SUPPLY
FEATURES
• High-speed access time: 8, 10, 12, and 15 ns
• CMOS low power operation
• TTL and CMOS compatible interface levels
• Single 3.3V ± 10%power supply
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ICSI IC61LV12816 is a high-speed, 2,097,152-bit static
RAM organized as 131,072 words by 16 bits. It is fabricated
using ICSI's high-performance CMOS technology. This highly
reliable process coupled with innovative circuit design
techniques, yields access times as fast as 8 ns with low power
consumption.
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down with
CMOS input levels.
Easy memory expansion is provided by using Chip Enable and
Output Enable inputs, CE and OE. The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IC61LV12816 is packaged in the JEDEC standard 44-pin
400mil SOJ, 44-pin 400mil TSOP-2, and 48-pin 6*8mm TFBGA.
A0-A16
VCC
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
CE
OE
WE
UB
LB
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution, Inc.
DECODER
I/O
DATA
CIRCUIT
CONTROL
CIRCUIT
128K x 16
MEMORY ARRAY
COLUMN I/O
2 Integrated Circuit Solution, Inc.
AHSR024-0A 09/12/2001
IC61LV12816
PIN CONFIGURATIONS
44-Pin SOJ
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
NC
44-Pin TSOP-2
A4
A3
A2
A1
A0
CE
I/O0
I/O1
I/O2
I/O3
Vcc
GND
I/O4
I/O5
I/O6
I/O7
WE
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
Vcc
I/O11
I/O10
I/O9
I/O8
NC
A8
A9
A10
A11
NC
1
2
3
4
5
6
48-Pin TF-BGA
1 2 3 4 5 6
A
B
C
D
E
F
G
H
LB
I/O
I/O
GND
Vcc
I/O
I/O
NC
0
1
6
7
OE
UB A3
I/O2A5
I/O
3
I/O
4
I/O
5
NC
A8
A0
NC
NC
A14
A12
A9
A1
A4
A6
A7
A16
A15
A13
A10
A2
N/C
CE I/O
I/O10I/O
I/O11Vcc
I/O
GND
12
I/O
I/O
13
WE
I/O
A11 NC
7
8
9
8
9
10
11
14
15
12
Integrated Circuit Solution, Inc. 3
AHSR024-0A 09/12/2001
IC61LV12816
PIN DESCRIPTIONS
A0-A16 Address Inputs
I/O0-I/O15 Data Inputs/Outputs
CE Chip Enable Input
OPERATING RANGE
Range Ambient Temperature Vcc
Commercial 0°C to +70°C 3.3V ± 10%
Industrial –40°C to +85°C 3.3V ± 10%
OE Output Enable Input
WE Write Enable Input
LB Lower-byte Control (I/O0-I/O7)
UB Upper-byte Control (I/O8-I/O15)
NC No Connection
Vcc Power
GND Ground
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
VCC Power Supply Voltage Relative to GND –0.5 to 4.0 V
VTERM Terminal Voltage with Respect to GND –0.5 to Vcc+0.5 V
TSTG Storage Temperature –65 to +150 °C
TBIAS Temperature Under Bias: Com. –65 to +85 °C
Ind. –45 to +90 °C
PT Power Dissipation 2.0 W
IOUT DC Output Current (LOW) +20 mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation
of the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 — V
VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA — 0.4 V
VIH Input HIGH Voltage 2 VCC + 0.3 V
VIL Input LOW Voltage
ILI Input Leakage GND ≤ VIN ≤ VCC Com. –1 1 µA
ILO Output Leakage GND ≤ VOUT ≤ VCC, Com. –1 1 µA
Notes:
1. VIL (min.) = –2.0V for pulse width less than 10 ns.
2. The Vcc operating range for 8 ns is 3.3V +10%, -5%.
(1)
–0.3 0.8 V
Ind. –5 5 µA
Outputs Disabled Ind. –5 5 µA
4 Integrated Circuit Solution, Inc.
AHSR024-0A 09/12/2001
Loading...