ICSI IC61C256AH-10U, IC61C256AH-12J, IC61C256AH-12JI, IC61C256AH-12N, IC61C256AH-12NI Datasheet

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IC61C256AH
Document Title
32K x 8 High Speed SRAM
Revision History
0A Initial Draft March 23,2001 0B Revise typo of t 0C Add SOP package type February 18,2002 0D Revise typo of sop size at page 2,9 April 19,2002
HA on page 7 October 18,2001
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
Integrated Circuit Solution Inc. 1
AHSR010-0D 4/19/2002
IC61C256AH
32K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
• High-speed access times: 10, 12, 15, 20, 25 ns
• Low active power: 400 mW (typical)
• Low standby power
-- 250 µW (typical) CMOS standby
-- 55 mW (typical) TTL standby
• Fully static operation: no clock or refresh required
• TTL compatible interface and outputs
• Single 5V power supply
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ICSI IC61C256AH is very high-speed, low power, 32,768 word by 8-bit static RAMs. They are fabricated using ICSI's high-performance CMOS technology. This highly reliable pro­cess coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum.
When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation is reduced to 50 µW (typical) with CMOS input levels.
Easy memory expansion is provided by using an active LOW Chip Enable (CE). The active LOW Write Enable (WE) controls both writing and reading of the memory.
The IC61C256AH is pin compatible with other 32k x 8 SRAMs and are available in 28-pin 300mil PDIP, 300mil SOJ, and 8*13.4mm TSOP-1 package, 330 mil SOP.
A0-A14
VCC
GND
I/O0-I/O7
CE
OE WE
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
DECODER
I/O
DATA
CIRCUIT
CONTROL
CIRCUIT
32K X 8
MEMORY ARRAY
COLUMN I/O
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PIN CONFIGURATION
28-Pin DIP and SOJ and SOP
A14 A12
A7 A6 A5 A4 A3 A2 A1
A0 I/O0 I/O1 I/O2
GND
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
PIN DESCRIPTIONS
VCC WE A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3
PIN CONFIGURATION
8x13.4mm TSOP-1
OE
A11
A9 A8
A13
WE
VCC
A14 A12
A7 A6 A5 A4 A3
TRUTH TABLE
22 23 24 25 26 27 28 1 2 3 4 5 6 7
21 20 19 18 17 16 15 14 13 12 11 10
A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0
9
A1
8
A2
A0-A14 Address Inputs
CE Chip Enable Input OE Output Enable Input WE Write Enable Input
I/O0-I/O7 Input/Output
Mode
WEWE
WE
WEWE
Not Selected X H X High-Z ISB1, ISB2 (Power-down)
Output Disabled H L H High-Z ICC1,ICC2 Read H L L DOUT ICC1, ICC2 Write L L X DIN ICC1, ICC2
CECE
OEOE
CE
OE I/O Operation Vcc Current
CECE
OEOE
Vcc Power GND Ground
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol Parameter Value Unit
VTERM Terminal Voltage with Respect to GND –0.5 to +7.0 V TBIAS Temperature Under Bias –55 to +125 °C TSTG Storage Temperature –65 to +150 °C PD Power Dissipation 1.5 W IOUT DC Output Current (LOW) 20 mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
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IC61C256AH
OPERATING RANGE
Range Ambient Temperature Speed VCC
Commercial 0°C to +70°C -10, -12 5V, ± 5%
-15, -20 5V ± 10%
Industrial –40°C to +85°C -12 5V ± 5%
-15, -20, -25 5V± 10%
Notes:
1. 8 ns is preliminary.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter Test Conditions Min. Max. Unit
VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 V VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA 0.4 V VIH Input HIGH Voltage VIL Input LOW Voltage ILI Input Leakage GND VIN VCC Com. –5 5 µA
(1)
(2)
2.2 VCC + 0.5 V
–0.5 0.8 V
Ind. –10 10
ILO Output Leakage GND VOUT VCC, Com. –5 5 µA
Outputs Disabled Ind. –10 10
Notes:
IH=VCC +3.0V for pulse width less than 10ns.
1. V
2. V
IL = –3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-10 -12 -15 -20 -25
Sym. Parameter Test Conditions
Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
ICC Vcc Dynamic Operating VCC = Max., CE = VIL Com. — 145 — 135 — 125 — 120 — 120 mA
Supply Current IOUT = 0 mA, f = fMAX Ind. — 180 — 170 — 160 — 150 — 140
ISB1 TTL Standby Current VCC = Max., Com. 25 25 25 25 25 mA
(TTL Inputs) VIN = VIH or VIL Ind. 30 30 30 30 30
CE ≥VIH, f = 0
ISB2 CMOS Standby VCC = Max., Com. 2 2 2 2 2 mA
Current (CMOS Inputs) CE ≥ VCC – 0.2V, Ind. 10 10 10 10 10
VIN ≥ VCC – 0.2V, or VIN ≤ 0.2V, f = 0
Notes:
1. At f = f
MAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
CAPACITANCE
(1,2)
Symbol Parameter Conditions Max. Unit
CIN Input Capacitance VIN = 0V 8 pF COUT Output Capacitance VOUT = 0V 10 pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A = 25°C, f = 1 MHz, Vcc = 5V.
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READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-10 -12 -15 -20 -25
Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
tRC Read Cycle Time 10 12 15 20 25 ns tAA Address Access Time 10 12 15 20 25 ns tOHA Output Hold Time 2 2 2 2 2 ns tACE CE Access Time 10 12 15 2 0 25 ns tDOE OE Access Time 5 5 7 8 9 ns
(2)
tLZOE
OE to Low-Z Output 0 0 0 0 0 ns
(2)
tHZOE
OE to High-Z Output 5 6 7 9 10 ns
(2)
tLZCE
CE to Low-Z Output 2 3 3 3 3 ns
(2)
tHZCE
CE to High-Z Output 5 7 8 9 10 ns
(3)
tPU
CE to Power-Up 0 0 0 0 0 ns
(3)
tPD
CE to Power-Down 10 12 15 18 20 ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±200 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST CONDITIONS
Parameter Unit
Input Pulse Level 0V to 3.0V Input Rise and Fall Times 3 ns Input and Output Timing 1.5V
and Reference Levels Output Load See Figures 1 and 2
AC TEST LOADS
480
5V
OUTPUT
30 pF
Including
jig and
scope
255
OUTPUT
5V
Including
5 pF
jig and
scope
480
255
Figure 1. Figure 2.
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IC61C256AH
AC WAVEFORMS
READ CYCLE NO. 1
ADDRESS
D
OUT
READ CYCLE NO. 2
ADDRESS
OE
(1,2)
PREVIOUS DATA VALID
(1,3)
t
RC
t
AA
t
OHA
DATA VALID
t
RC
t
AA
t
OHA
t
OHA
t
DOE
t
CE
t
LZCE
OUT
D
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE = V
3. Address is valid prior to or coincident with CE LOW transitions.
HIGH-Z
LZOE
t
ACE
IL.
DATA VALID
t
HZCE
t
HZOE
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WRITE CYCLE SWITCHING CHARACTERISTICS
(1,2)
(Over Operating Range)
-10 -12 -15 -20 -25
Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit
tWC Write Cycle Time 10 12 15 20 25 ns tSCE CE to Write End 9 10 10 13 15 ns tAW Address Setup Time 9 10 12 15 20 ns
to Write End
tHA Address Hold 0 0 0 0 0 ns
from Write End
tSA Address Setup Time 0 0 0 0 0 ns
(4)
tPWE
WE Pulse Width 8 8 10 13 15 ns
tSD Data Setup to Write End 7 7 9 10 12 ns tHD Data Hold from Write End 0 0 0 0 0 ns
(2)
tHZWE
WE LOW to High-Z Output 6 6 7 8 10 ns
tLZWE WE HIGH to Low-Z Output 0 0 0 0 0 ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write.
4. Tested with OE HIGH.
AC WAVEFORMS
WRITE CYCLE NO. 1
ADDRESS
CE
WE
OUT
D
D
IN
(WE Controlled)
t
SA
DATA UNDEFINED
(1,2 )
t
WC
VALID ADDRESS
t
SCE
t
AW
t
PWE1
t
PWE2
t
HZWE
HIGH-Z
t
SD
DATAIN VALID
t
HA
t
LZWE
t
HD
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IC61C256AH
WRITE CYCLE NO. 2
ADDRESS
OE
CE
LOW
WE
t
OUT
D
DIN
(CE Controlled)
SA
DATA UNDEFINED
(1,2)
VALID ADDRESS
t
AW
t
HZWE
t
WC
t
PWE1
HIGH-Z
t
SD
DATAIN VALID
t
HA
t
LZWE
t
HD
Notes:
1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write.
2. I/O will assume the High-Z state if OE ≥ V
IH.
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IC61C256AH
ORDERING INFORMATION: IC61C256AH Commercial Range: 0°C to +70°C
Speed (ns) Order Part No. Package
10 IC61C256AH-10N 300mil DIP 10 IC61C256AH-10J 300mil SOJ 10 IC61C256AH-10T 8*13.4mm TSOP-1 10 IC61C256AH-10U 330mil SOP
12 IC61C256AH-12N 300mil DIP 12 IC61C256AH-12J 300mil SOJ 12 IC61C256AH-12T 8*13.4mm TSOP-1 12 IC61C256AH-12U 330mil SOP
15 IC61C256AH-15N 300mil DIP 15 IC61C256AH-15J 300mil SOJ 15 IC61C256AH-15T 8*13.4mm TSOP-1 15 IC61C256AH-15U 330mil SOP
20 IC61C256AH-20N 300mil DIP 20 IC61C256AH-20J 300mil SOJ 20 IC61C256AH-20T 8*13.4mm TSOP-1 20 IC61C256AH-20U 330mil SOP
ORDERING INFORMATION: IC61C256AH Industrial Range: –40°C to +85°C
Speed (ns) Order Part No. Package
12 IC61C256AH-12NI 300mil DIP 12 IC61C256AH-12JI 300mil SOJ 12 IC61C256AH-12TI 8*13.4mm TSOP-1 12 IC61C256AH-12UI 330mil SOP
15 IC61C256AH-15NI 300mil DIP 15 IC61C256AH-15JI 300mil SOJ 15 IC61C256AH-15TI 8*13.4mm TSOP-1 15 IC61C256AH-15UI 330mil SOP
20 IC61C256AH-20NI 300mil DIP 20 IC61C256AH-20JI 300mil SOJ 20 IC61C256AH-20TI 8*13.4mm TSOP-1 20 IC61C256AH-20UI 330mil SOP
25 IC61C256AH-25NI 300mil DIP 25 IC61C256AH-25JI 300mil SOJ 25 IC61C256AH-25TI 8*13.4mm TSOP-1 25 IC61C256AH-25UI 330mil SOP
Integrated Circuit Solution Inc.
HEADQUARTER:
NO.2, TECHNOLOGY RD. V, SCIENCE-BASED INDUSTRIAL PARK,
HSIN-CHU, TAIWAN, R.O.C.
TEL: 886-3-5780333
Fax: 886-3-5783000
BRANCH OFFICE:
7F, NO. 106, SEC. 1, HSIN-TAI 5TH ROAD,
HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C.
TEL: 886-2-26962140
FAX: 886-2-26962252
http://www.icsi.com.tw
Integrated Circuit Solution Inc. 9
AHSR010-0D 4/19/2002
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