0AInitial DraftMarch 23,2001
0BRevise typo of t
0CAdd SOP package typeFebruary 18,2002
0DRevise typo of sop size at page 2,9April 19,2002
HA on page 7October 18,2001
The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and
products. ICSI will answer to your questions about device. If you have any questions, please contact the ICSI offices.
Integrated Circuit Solution Inc.1
AHSR010-0D 4/19/2002
IC61C256AH
32K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
• High-speed access times: 10, 12, 15, 20, 25 ns
• Low active power: 400 mW (typical)
• Low standby power
-- 250 µW (typical) CMOS standby
-- 55 mW (typical) TTL standby
• Fully static operation: no clock or refresh
required
• TTL compatible interface and outputs
• Single 5V power supply
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION
The ICSI IC61C256AH is very high-speed, low power, 32,768
word by 8-bit static RAMs. They are fabricated using ICSI's
high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields
access times as fast as 8 ns maximum.
When CE is HIGH (deselected), the device assumes a standby
mode at which the power dissipation is reduced to
50 µW (typical) with CMOS input levels.
Easy memory expansion is provided by using an active LOW
Chip Enable (CE). The active LOW Write Enable (WE) controls
both writing and reading of the memory.
The IC61C256AH is pin compatible with other 32k x 8 SRAMs
and are available in 28-pin 300mil PDIP, 300mil SOJ, and
8*13.4mm TSOP-1 package, 330 mil SOP.
VTERMTerminal Voltage with Respect to GND–0.5 to +7.0V
TBIASTemperature Under Bias–55 to +125°C
TSTGStorage Temperature–65 to +150°C
PDPower Dissipation1.5W
IOUTDC Output Current (LOW)20mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Integrated Circuit Solution Inc.3
AHSR010-0D 4/19/2002
IC61C256AH
OPERATING RANGE
RangeAmbient TemperatureSpeedVCC
Commercial0°C to +70°C-10, -125V, ± 5%
-15, -205V ± 10%
Industrial–40°C to +85°C-125V ± 5%
-15, -20, -255V± 10%
Notes:
1. 8 ns is preliminary.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
SymbolParameterTest ConditionsMin.Max.Unit
VOHOutput HIGH VoltageVCC = Min., IOH = –4.0 mA2.4—V
VOLOutput LOW VoltageVCC = Min., IOL = 8.0 mA—0.4V
VIHInput HIGH Voltage
VILInput LOW Voltage
ILIInput LeakageGND ≤ VIN≤ VCCCom.–55µA
(1)
(2)
2.2VCC + 0.5V
–0.50.8V
Ind.–1010
ILOOutput LeakageGND ≤ VOUT≤ VCC,Com.–55µA
Outputs DisabledInd.–1010
Notes:
IH=VCC +3.0V for pulse width less than 10ns.
1. V
2. V
IL = –3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-10-12-15-20-25
Sym.ParameterTest Conditions
Min. Max.Min. Max.Min. Max.Min. Max.Min. Max.Unit
ICCVcc Dynamic OperatingVCC = Max., CE = VILCom.— 145— 135— 125— 120— 120 mA
tWCWrite Cycle Time10—12—15—20—25—ns
tSCECE to Write End9—10—10—13—15—ns
tAWAddress Setup Time9—10—12—15—20—ns
to Write End
tHAAddress Hold0—0—0—0—0—ns
from Write End
tSAAddress Setup Time0—0—0—0—0—ns
(4)
tPWE
WE Pulse Width8—8—10—13—15—ns
tSDData Setup to Write End7—7—9—10—12—ns
tHDData Hold from Write End0—0—0—0—0—ns
(2)
tHZWE
WE LOW to High-Z Output—6—6—7—8—10ns
tLZWEWE HIGH to Low-Z Output0—0—0—0—0—ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V
and output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
4. Tested with OE HIGH.
AC WAVEFORMS
WRITE CYCLE NO. 1
ADDRESS
CE
WE
OUT
D
D
IN
(WE Controlled)
t
SA
DATA UNDEFINED
(1,2 )
t
WC
VALID ADDRESS
t
SCE
t
AW
t
PWE1
t
PWE2
t
HZWE
HIGH-Z
t
SD
DATAIN VALID
t
HA
t
LZWE
t
HD
Integrated Circuit Solution Inc.7
AHSR010-0D 4/19/2002
IC61C256AH
WRITE CYCLE NO. 2
ADDRESS
OE
CE
LOW
WE
t
OUT
D
DIN
(CE Controlled)
SA
DATA UNDEFINED
(1,2)
VALID ADDRESS
t
AW
t
HZWE
t
WC
t
PWE1
HIGH-Z
t
SD
DATAIN VALID
t
HA
t
LZWE
t
HD
Notes:
1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
2. I/O will assume the High-Z state if OE ≥ V
IH.
8Integrated Circuit Solution Inc.
AHSR010-0D 4/19/2002
IC61C256AH
ORDERING INFORMATION:
IC61C256AH
Commercial Range: 0°C to +70°C