Page 1
iC-HK, iC-HKB
OVERTEMP.−
SHUTDOWN
iC−HK/B
CI
LDK
EN1
EN2
AGND2AGND1
GND
8
3
1
5
42
6
VDD
7
LD
RK1 RK2
CLDA
M2M1
+3.5..5 V
V(CI)
155 MHz LASER SWITCH
Rev F2, Page 1/10
FEATURES
• Laser switch for frequencies from CW up to 155 MHz
• Spike-free switching of the laser current
• Dual switching inputs with independent current control
• Operates as a voltage-controlled current source
• Pulsed operation with up to 700 mA per channel
• CW operation with up to 150 mA per channel
• Simple power control at pin CI
• Thermal shutdown
• Protective ESD circuitry
• iC-HKB for driving blue laser diodes
• Option: extended temperature range
BLOCK DIAGRAM
APPLICATIONS
• Data transmission
• Laser scanning devices
• Optical storage devices
PACKAGES
SO8
thermal pad
thermal pad
MSOP8
Copyright © 2015 iC-Haus http://www.ichaus.com
Page 2
iC-HK, iC-HKB
1
2 3
4
5678
<A-CODE>
<P-CODE>
<P-CODE>
1
2 3
4
5678
<P-CODE>
<A-CODE>
155 MHz LASER SWITCH
DESCRIPTION
Rev F2, Page 2/10
Laser Switch iC-HK/B enables the spike-free switching of laser diodes with well-dened current pulses at
frequencies ranging from DC to 155 MHz.
The diode current is determined by the voltage at
pin CI and by the resistors RK1 and RK2. The two
fast switches are controlled independently via CMOS
inputs EN1 and EN2. The laser diode can thus be
PACKAGING INFORMATION SO8-TP, MSOP8-TP to JEDEC
PIN CONFIGURATION SO8-TP
turned on and off or switched between different current levels dened by the ratio of RK1 and RK2.
Each channel can be operated at 150 mA DC and up
to 700 mA pulsed current depending on the frequency,
duty cycle and heat dissipation.
The integrated thermal shutdown feature prevents
damage from excessive temperature.
PIN FUNCTIONS
No. Name Function
The Thermal Pad is to be connected to a Ground Plane
on the PCB.
1 EN1 Channel 1 Switching Input
2 AGND1 Channel 1 Reference Ground
3 LDK Driver Output (LD Cathode)
4 AGND2 Channel 2 Reference Ground
5 EN2 Channel 2 Switching Input
6 GND Ground
7 VDD +5 V Supply Voltage
8 CI Voltage Reference for Current Control
PIN CONFIGURATION MSOP8-TP
Page 3
iC-HK, iC-HKB
4.90
3.90
6
1.27
0.40
2.29
2.29
TOP
1.40
0.08
SIDE
45°
0.84
4°
FRONT
1.27
0.60
2.40
5.40
2.40
1.90
RECOMMENDED PCB-FOOTPRINT
dra_so8-tp-3_pack_1, 10:1
All dimensions given in mm. Tolerances of form and position according to JEDEC MS-012
155 MHz LASER SWITCH
PACKAGE DIMENSIONS SO8-TP
Rev F2, Page 3/10
Page 4
iC-HK, iC-HKB
0.30 0.65
3
3
4.90
2.39
1.73
TOP
0.08
0.85
SIDE
0.40
0.65
1.60
4
2.40
1.75
RECOMMENDED PCB-FOOTPRINT
0.60
4°
FRONT
dra_msop8-tp-1_pack_1, 10:1
All dimensions given in mm. Tolerances of form and position according to JEDEC MO-187.
155 MHz LASER SWITCH
PACKAGE DIMENSIONS MSOP8-TP
Rev F2, Page 4/10
Page 5
iC-HK, iC-HKB
155 MHz LASER SWITCH
Rev F2, Page 5/10
ABSOLUTE MAXIMUM RATINGS
Beyond these values damage may occur; device operation is not guaranteed.
Item Symbol Parameter Conditions Unit
No. Min. Max.
G001 VDD Voltage at VDD -0.7 6 V
G002 I(VDD) Current in VDD -10 150 mA
G003 V(CI) Voltage at CI -0.7 6 V
G004 I(LDK) Current in LDK DC current -10 300 mA
G005 I(AGND1) Current in AGND1 DC current -150 10 mA
G006 I(AGND2) Current in AGND2 DC current -150 10 mA
G007 V() Voltage at EN1, EN2, AGND1 and
G008 V(LDK)
G009 Vd() Susceptibility to ESD at all pins HBM, 100 pF discharged through 1.5 kΩ 1 kV
G010 Tj Operating Junction Temperature -40 150 °C
G011 Ts Storage Temperature Range -40 150 °C
AGND2
Voltage at LDK
iC-HK -0.7 6 V
iC-HKB -0.7 15 V
-0.7 6 V
THERMAL DATA
Operating Conditions: VDD = 3.5...5.5 V
Item Symbol Parameter Conditions Unit
No. Min. Typ. Max.
T01 Ta
T02 Rthja
T03 Rthja Thermal Resistance Chip/Ambient
Operating Ambient Temperature Range
(extended range on request)
Thermal Resistance Chip/Ambient
(SO8)
(MSOP8)
-25 85 °C
soldered to PCB, no additional cooling areas 170 K/W
therm. pad soldered to approx. 2 cm² cooling
area
soldered to PCB, therm. pad soldered to
approx. 2 cm² cooling area
30 50 K/W
30 60 K/W
All voltages are referenced to ground unless otherwise stated.
All currents owing into the device pins are positive; all currents owing out of the device pins are negative.
Page 6
iC-HK, iC-HKB
155 MHz LASER SWITCH
Rev F2, Page 6/10
ELECTRICAL CHARACTERISTICS
Operating Conditions: VDD = 3.5...5.5 V, Tj = -25...125 °C unless otherwise stated
Item Symbol Parameter Conditions Tj Fig. Unit
No. °C Min. Typ. Max.
Total Device
001 VDD Permissible Supply Voltage 3.5 5.5 V
002 I(VDD) Supply Current in VDD CW operation 0 80 µA
003 I(VDD) Supply Current in VDD pulsed operation,
004
V(LDK) Permissible Voltage at LDK
005 Vc(CI)hi Clamp Voltage hi at CI Vc(CI) = V(CI) – VDD,
006 Vc(EN)hi Clamp Voltage hi at EN1, EN2 Vc(EN) = V(EN) – VDD,
007 Vc()lo
008 Ipd()
009 Toff Overtemperature Shutdown 110 150 °C
Laser Control LDK, CI, EN1, EN2
101 Icw(LDK)
102 Ipk(LDK)
107
Vs(LDK) Saturation Voltage at LDK
108 I0(LDK) Leakage Current in LDK ENx = lo, V(LDK) = VDD 0 10 µA
109 tr() LDK Current Rise Time Iop = 150 mA,
110 tf() LDK Current Fall Time Iop(LDK) = 150mA,
111 tp() Propagation Delay
112 Vt(ENx) Input Threshold Voltage 33 50 67 %VDD
113 V(CI) Permissible Voltage at CI 0 5.5 V
114 Vt(CI) Threshold Voltage at CI I(LDK) < 5 mA 0.75 1.15 V
115 CR()
Clamp Voltage lo at VDD, LDK,
CI, EN1, EN2, AGND1, AGND2
Pull-Down Current at CI, EN1,
EN2
Permissible CW Current in LDK
(per channel)
Permissible Pulsed Current in
LDK (per channel)
V(ENx) → I(LDK)
Current Matching Channel1/Channel2
f(EN1, EN2) = 150 MHz
iC-HK 0 5.5 V
iC-HKB 0 12 V
I(CI) = 10 mA, other pins open
I(EN) = 1 mA, other pins open
I() = -10 mA, other pins open -1.25 -0.4 V
f > 100 kHz, thi/T < 1:10 700 mA
I(LDK) = 40 mA 1.2 V
I(LDK) = 60 mA 1.3 V
I(LDK) = 150 mA, iC-HK 1.5 V
I(LDK) = 150 mA, iC-HKB 1.8 V
I(LDK): 10% → 90%Iop
I(LDK): 90% → 10%Iop
ENx hi ↔ lo, V(50%) → I(50%) 1
V(CI) = 0...VDD,
I(LDK) = 30...300 mA, RK1= RK2
0 150 mA
0.4 1.25 V
0.4 1.25 V
1 5 µA
150 mA
3 1.5
3 1.5
∗
0.9 1 1.1
∗
ns
∗
ns
∗
3
ns
∗
Projected values by sample characterization
Page 7
iC-HK, iC-HKB
I(LDK)
t
I
op
10 % I
op
90 % I
op
t
r
t
f
RKx= 0 Ω
RKx= 1 Ω
RKx= 2 Ω
RKx= 3 Ω
RKx= 4 Ω
RKx= 5 Ω
RKx= 6 Ω
RKx= 8 Ω
RKx= 10 Ω
RKx= 15 Ω
RKx= 20 Ω
RKx= 30 Ω
RKx= 50 Ω
I(LDK)
V(CI)
1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 V
0
50
100
150
200
250
300 mA
RKx = 0Ω
RKx = 1Ω
RKx = 2Ω
RKx = 3Ω
RKx = 4Ω
RKx = 6Ω
RKx = 8Ω
RKx = 10Ω
RKx = 15Ω
RKx = 20Ω
RKx = 30Ω
RKx = 50Ω
I(LDK)
RKx = 5Ω
700 mA
2.2 2.4 2.6 2.8 3 3.2 3.4 3.6 3.8V
0
100
200
300
400
500
600
V(CI)
V(CI)
I(LDK)
3.5 4 4.5
5 V
0
200
400
600
800
1000
1200 mA
RKx = 0Ω
RKx = 1Ω
RKx = 2Ω
RKx = 3Ω
RKx = 4Ω
RKx = 5Ω
RKx = 6Ω
RKx = 8Ω
RKx = 10Ω
RKx = 15Ω
RKx = 20Ω
RKx = 30Ω
RKx = 50Ω
0 0.5 1 1.5 2
0
50
100
150
200
V(CI)
max
min
I(LDK)
250 mA
RKx = 0Ω
0 1 2 3 4 5 V
0
0.5
1
1.5 A
V(CI)
max
min
I(LDK)
RKx = 0Ω
155 MHz LASER SWITCH
ELECTRICAL CHARACTERISTICS DIAGRAMS
Rev F2, Page 7/10
Figure 1: Laser current pulse in LDK
Figure 3: Diode current vs. V(Cl) at Tj = 27 °C
Figure 2: Diode current vs. V(Cl) at Tj = 27 °C
Figure 4: Diode current vs. V(Cl) at Tj = 27 °C
Figure 5:
Diode current variation vs. V(CI) at
V(LDK) = 3 V
Figure 6:
Diode current variation vs. V(CI) at
V(LDK) = 3 V
Page 8
iC-HK, iC-HKB
RKx= 0 Ω
RKx= 1 Ω
RKx= 2 Ω
RKx= 3 Ω
RKx= 4 Ω
RKx= 5 Ω
RKx= 6 Ω
RKx= 8 Ω
RKx= 10 Ω
RKx= 15 Ω
RKx= 20 Ω
RKx= 30 Ω
RKx= 50 Ω
I(LDK)
V(CI)
1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 V
0
50
100
150
200
250
300 mA
1.75
3
1
2
155 MHz LASER SWITCH
V(CI)
0.8
0.6
0.4
I(LDK) [A]
0.2
0
Figure 7: Output Characteristics of LDK
0 V
1 V
2 V
3 V
4 V
5 V
1 2 3 4 5 6
V(LDK) [V]
Rev F2, Page 8/10
DESCRIPTION OF FUNCTIONS
Laser current dependency of V(Cl), RK1, RK2
Depending on the laser diode different diode currents
are necessary to obtain the required laser power. The
values for V(CI), RK1 and RK2 can be determined for
the required diode current at room temperature from
the opposite diagram. A parallel to the x axis must be
drawn through the desired diode current. Either RKx
can be obtained for a required value of V(CI) or the
respective value of V(VI) can be achieved for a given
RKx.
Thermal Shutdown
iC-HK/B is protected by an integrated thermal shutdown
feature. When the shutdown temperature is reached
both channels are unconditionally switched off.
APPLICATION NOTES
Figure 8: Diode current vs. V(Cl) at Tj = 27 °C
Application notes for iC-HK/B are available as a separate document.
Page 9
iC-HK, iC-HKB
155 MHz LASER SWITCH
Rev F2, Page 9/10
REVISION HISTORY
Rel Rel.Date Chapter Modication Page
F2 15-04-22 FEATURES Combination with iC-WK/L removed 1
F2 PACKAGES Drawings exchanged for more recent ones 1
F2 BLOCK DIAGRAM Combination with iC-WK/L removed 1
F2 DESCRIPTION Obsolete schematics removed 2
F2 PACKAGING INFORMATION Drawings exchanged for more recent ones 2
PACKAGING INFORMATION Package Dimensions added 3, 4
F2 ELECTRICAL
F2 ELECTRICAL
F2 ORDERING INFORMATION Updated order designations 10
CHARACTERISTICS
CHARACTERISTICS
109, 110, 111: Footnotes regarding test coverage added 6
Output characteristics added 8
iC-Haus expressly reserves the right to change its products and/or specications. An info letter gives details as to any amendments and additions made to the
relevant current specications on our internet website www.ichaus.com/infoletter; this letter is generated automatically and shall be sent to registered users by
email.
Copying – even as an excerpt – is only permitted with iC-Haus’ approval in writing and precise reference to source.
iC-Haus does not warrant the accuracy, completeness or timeliness of the specication and does not assume liability for any errors or omissions in these
materials.
The data specied is intended solely for the purpose of product description. No representations or warranties, either express or implied, of merchantability, tness
for a particular purpose or of any other nature are made hereunder with respect to information/specication or the products to which information refers and no
guarantee with respect to compliance to the intended use is given. In particular, this also applies to the stated possible applications or areas of applications of
the product.
iC-Haus products are not designed for and must not be used in connection with any applications where the failure of such products would reasonably be expected
to result in signicant personal injury or death (Safety-Critical Applications) without iC-Haus’ specic written consent. Safety-Critical Applications include, without
limitation, life support devices and systems. iC-Haus products are not designed nor intended for use in military or aerospace applications or environments or in
automotive applications unless specically designated for such use by iC-Haus.
iC-Haus conveys no patent, copyright, mask work right or other trade mark right to this product. iC-Haus assumes no liability for any patent and/or other trade
mark rights of a third party resulting from processing or handling of the product and/or any other use of the product.
Page 10
iC-HK, iC-HKB
155 MHz LASER SWITCH
Rev F2, Page 10/10
ORDERING INFORMATION
Type Package Options Order Designation
iC-HK SO8 Thermal Pad iC-HK SO8-TP
iC-HK MSOP8 Thermal Pad iC-HK MSOP8-TP
iC-HKB SO8 Thermal Pad iC-HKB SO8-TP
iC-HKB MSOP8 Thermal Pad iC-HKB MSOP8-TP
For technical support, information about prices and terms of delivery please contact:
iC-Haus GmbH Tel.: +49 (0) 61 35 - 92 92 - 0
Am Kuemmerling 18 Fax: +49 (0) 61 35 - 92 92 - 192
D-55294 Bodenheim Web: http://www.ichaus.com
GERMANY E-Mail: sales@ichaus.com
Appointed local distributors: http://www.ichaus.com/sales_partners
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