HYNIX HY62UF08401C User Manual
查询HY62UF08401C供应商
HY62UF08401C Series
256Kx16bit full CMOS SRAM
Document Title
512K x 8bit 2.7 ~ 3.3V Super low Power FCMOS Slow SRAM
Revision History
Revision No History Draft Date Remark
00 Initial Draft Dec.18.2000 Final
01 Changed Logo Mar.23.2001 Final
02 Changed Isb1 values Jun.07.2001 Final
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility
for use of circuits described. No patent licenses are implied.
Rev.02 / Jun.01 Hynix Semiconductor
HY62UF08401C Series
SENSE AMP
WRITE DRIVER
DATA I/O
BUFFER
COLUMN
DECODER
BLOCK
DECODER
PRE DECODER
ADD INPUT
BUFFER
DESCRIPTION
The HY62UF08401C is a high speed, super low
power and 4Mbit full CMOS SRAM organized as
512K words by 8bits. The HY62UF08401C uses
high performance full CMOS process technology
and is designed for high speed and low power
circuit technology. It is particularly well-suited for
the high density low power system application.
This device has a data retention mode that
guarantees data to remain valid at a minimum
power supply voltage of 1.2V.
HY62UF08401C-I 2.7~3.3
Note 1. I : Industrial
Voltage
(V)
Speed (ns)
55/70 5 15 6 -40~85
2. Current value is max.
PIN CONNECTION BLOCK DIAGRAM
VCC
VCC
A11
A11
A9
A9
A8
A8
A13
A13
/WE
/WE
A18
A18
A15
A15
A17
A17
A16
A16
A14
A14
A12
A12
A7
A7
A6
A6
A5
A5
A4
A4
1
1
2
2
3
3
4
4
5
5
6
6
7
7
8
8
9
9
10
10
11
11
12
12
13
13
14
14
15
15
16
16
32-sTSOP Forward
PIN DESCRIPTION
Pin Name Pin Function Pin Name Pin Function
/CS Chip Select I/O1 ~ I/O8 Data Input/Output
/WE Write Enable Vcc Power (2.7V~3.3V)
/OE Output Enable Vss Ground
A0 ~ A18 Address Input
Operation
Current/Icc(mA)
/OE
32
/OE
32
A10
31
A10
31
/CS
30
/CS
30
I/O8
29
I/O8
29
I/O7
28
I/O7
28
I/O6
27
I/O6
27
I/O5
26
I/O5
26
I/O4
25
I/O4
25
VSS
24
VSS
24
I/O3
23
I/O3
23
I/O2
22
I/O2
22
I/O1
21
I/O1
21
A0
20
A0
20
A1
19
A1
19
A2
18
A2
18
A3
17
A3
17
FEATURES
• Fully static operation and Tri-state output
• TTL compatible inputs and outputs
• Battery backup
-. 1.2V(min) data retention
• Standard pin configuration
-. 32 - sTSOP - 8X13.4(Standard)
A18
/CS
/OE
/WE
Standby
Current(uA) Product No.
LL SL
A0
Temperature
ROW
MEMORY ARRAY
512K x 8
(°C)
I/O1
I/O8
Rev.02 / Jun.01
2
HY62UF08401C Series
ORDERING INFORMATION
Part No. Speed Power Temp
HY62UF08401C-DS(I) 55/70 LL-part I sTSOP
HY62UF08401C-SS(I) 55/70 SL-part I sTSOP
Note 1. I : Industrial
ABSOLUTE MAXIMUM RATINGS (1)
Symbol Parameter Rating Unit Remark
VIN, VOUT Input/Output Voltage -0.3 to 3.6 V
Vcc Power Supply -0.3 to 4.6 V
TA Operating Temperature -40 to 85
TSTG Storage Temperature -55 to 150
PD Power Dissipation 1.0 W
TSOLDER Ball Soldering Temperature & Time
Note
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is stress rating only and the functional operation of the device under these or
any other conditions above those indicated in the operation of this specification is not implied.
Exposure to the absolute maximum rating conditions for extended period may affect reliability.
TRUTH TABLE
/CS /WE /OE
H X X Deselected High-Z Standby
L
Note:
1. H=VIH, L=VIL, X=don't care (VIL or VIH)
H
L X Write Din
H Output Disabled
L Read Dout
MODE I/O OPERATION Supply Current
High-Z Active
.
Package
°C
°C
260 • 10 °C•sec
Active
HY62UF08401C-I
Rev.02 / Jun.01
2
Loading...