DD min from 3.135V to 3.0V.
IL min from VSSQ-0.3V to -0.3V.
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume
any responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.9 / July 2004
HY57V283220(L)T(P)/ HY5V22(L)F(P)
4 Banks x 1M x 32Bit Synchronous DRAM
DESCRIPTION
The Hynix HY57V283220(L)T(P) / HY5V22(L)F(P) is a 134,217,728-bit CMOS Synchronous DRAM, ideally suited for the
memory applications which require wide data I/O and high bandwidth. HY57V283220(L)T(P) / HY5V22(L)F(P) is organized as 4banks of 1,048,576x32.
HY57V283220(L)T(P) / HY5V22(L)F(P) is offering fully synchronous operation referenced to a positive edge of the
clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally
pipelined to achieve very high bandwidth. All input and output voltage levels are compatible with LVTTL.
Programmable options include the length of pipeline (Read latency of 2 or 3), the number of consecutive read or write
cycles initiated by a single control command (Burst length of 1,2,4,8 or full page), and the burst count
sequence(sequential or interleave). A burst of read or write cycles in progress can be terminated by a burst terminate
command or can be interrupted and replaced by a new burst read or write command on any cycle. (This pipelined
design is not restricted by a `2N` rule.)
FEATURES
•JEDEC standard 3.3V power supply
•Auto refresh and self refresh
•All device pins are compatible with LVTTL interface
• 86TSOP-II, 90Ball FBGA with 0.8mm of pin pitch
•All inputs and outputs referenced to positive edge of
system clock
•Data mask function by DQM0,1,2 and 3
•Internal four banks operation
ORDERING INFORMATION
Part No.Clock FrequencyOrganizationInterfacePackage
HY57V283220(L)T(P)-5
HY5V22(L)F(P)-5
HY57V283220(L)T(P)-55
HY5V22(L)F(P)-55
HY57V283220(L)T(P)-6
HY5V22(L)F(P)-6
HY57V283220(L)T(P)-7
HY5V22(L)F(P)-7
HY57V283220(L)T(P)-H
HY5V22(L)F(P)-H
HY57V283220(L)T(P)-8
HY5V22(L)F(P)-8
HY57V283220(L)T(P)-P
HY5V22(L)F(P)-P
HY57V283220(L)T(P)-S
HY5V22(L)F(P)-S
200MHz
183MHz
166MHz
143MHz
133MHz
125MHz
100MHz
100MHz
•4096 refresh cycles / 64ms
•Programmable Burst Length and Burst Type
- 1, 2, 4, 8 or full page for Sequential Burst
- 1, 2, 4 or 8 for Interleave Burst
•Programmable CAS
Latency ; 2, 3 Clocks
•Burst Read Single Write operation
4Banks x 1Mbits x32LVTTL
86TSOP-II
90Ball FBGA
Note) Hynix supports lead free part for each speed grade with same specification.
This document is a general product description and is subject to change without notice. Hynix Semiconductor Inc. does not assume
any responsibility for use of circuits described. No patent licenses are implied.
Rev. 0.9 / July 2004
HY57V283220(L)T(P) / HY5V22(L)F(P)
PIN CONFIGURATION ( HY57V283220(L)T(P) Series)
DD
DD
DD
V
V
V
DQ0
DQ0
DQ0
DDQ
DDQ
DDQ
V
V
V
DQ1
DQ1
DQ1
DQ2
DQ2
DQ2
SSQ
SSQ
SSQ
V
V
V
DQ3
DQ3
DQ3
DQ4
DQ4
DQ4
DDQ
DDQ
DDQ
V
V
V
DQ5
DQ5
DQ5
DQ6
DQ6
DQ6
SSQ
SSQ
SSQ
V
V
V
DQ7
DQ7
DQ7
NC
NC
NC
DD
DD
DD
V
V
V
DQM0
DQM0
DQM0
/W E
/W E
/W E
/C AS
/C AS
/C AS
/R AS
/R AS
/R AS
/C S
/C S
/C S
A11
A11
A11
BA0
BA0
BA0
BA1
BA1
BA1
A10/AP
A10/AP
A10/AP
A0
A0
A0
A1
A1
A1
A2
A2
A2
DQM2
DQM2
DQM2
DD
DD
DD
V
V
V
NC
NC
NC
DQ16
DQ16
DQ16
SSQ
SSQ
SSQ
V
V
V
DQ17
DQ17
DQ17
DQ18
DQ18
DQ18
DDQ
DDQ
DDQ
V
V
V
DQ19
DQ19
DQ19
DQ20
DQ20
DQ20
SSQ
SSQ
SSQ
V
V
V
DQ21
DQ21
DQ21
DQ22
DQ22
DQ22
DDQ
DDQ
DDQ
V
V
V
DQ23
DQ23
DQ23
DD
DD
DD
V
V
V
1
1
1
2
2
2
3
3
3
4
4
4
5
5
5
6
6
6
7
7
7
8
8
8
9
9
9
10
10
10
11
11
11
12
12
12
13
13
13
14
14
14
15
15
15
16
16
16
17
17
17
18
18
18
19
19
19
20
20
20
21
21
21
22
22
22
23
23
23
24
24
24
25
25
25
26
26
26
27
27
27
28
28
28
29
29
29
30
30
30
31
31
31
32
32
32
33
33
33
34
34
34
35
35
35
36
36
36
37
37
37
38
38
38
39
39
39
40
40
40
41
41
41
42
42
42
43
43
43
86pin TSOP II
86pin TSO P II
400mil x 875mil
400m il x 875mil
0.5mm pin pitch
0.5m m pin pitch
86
86
86
SS
SS
SS
V
V
V
85
85
85
DQ15
DQ15
DQ15
84
84
84
SSQ
SSQ
SSQ
V
V
V
83
83
83
DQ14
DQ14
DQ14
82
82
82
DQ13
DQ13
DQ13
81
81
81
DDQ
DDQ
DDQ
V
V
V
80
80
80
DQ12
DQ12
DQ12
79
79
79
DQ11
DQ11
DQ11
78
78
78
SSQ
SSQ
SSQ
V
V
V
77
77
77
DQ10
DQ10
DQ10
76
76
76
DQ9
DQ9
DQ9
75
75
75
DDQ
DDQ
DDQ
V
V
V
74
74
74
DQ8
DQ8
DQ8
73
73
73
NC
NC
NC
72
72
72
SS
SS
SS
V
V
V
71
71
71
DQM1
DQM1
DQM1
70
70
70
NC
NC
NC
69
69
69
NC
NC
NC
68
68
68
CLK
CLK
CLK
67
67
67
CKE
CKE
CKE
66
66
66
A9
A9
A9
65
65
65
A8
A8
A8
64
64
64
A7
A7
A7
63
63
63
A6
A6
A6
62
62
62
A5
A5
A5
61
61
61
A4
A4
A4
60
60
60
A3
A3
A3
59
59
59
DQM3
DQM3
DQM3
58
58
58
SS
SS
SS
V
V
V
57
57
57
NC
NC
NC
56
56
56
DQ31
DQ31
DQ31
55
55
55
DDQ
DDQ
DDQ
V
V
V
54
54
54
DQ30
DQ30
DQ30
53
53
53
DQ29
DQ29
DQ29
52
52
52
SSQ
SSQ
SSQ
V
V
V
51
51
51
DQ28
DQ28
DQ28
50
50
50
DQ27
DQ27
DQ27
49
49
49
DDQ
DDQ
DDQ
V
V
V
48
48
48
DQ26
DQ26
DQ26
47
47
47
DQ25
DQ25
DQ25
46
46
46
SSQ
SSQ
SSQ
V
V
V
45
45
45
DQ24
DQ24
DQ24
44
44
SS
SS
SS
V
V
V
PIN DESCRIPTION
PINPIN NAMEDESCRIPTION
CLKClock
CKEClock Enable
CS
Chip SelectEnables or disables all inputs except CLK, CKE and DQM
BA0, BA1Bank Address
A0 ~ A11Address
Row Address Strobe,
RAS
, CAS, WE
Column Address Strobe,
Write Enable
DQM0~3Data Input/Output MaskControls output buffers in read mode and masks input data in write mode
DQ0 ~ DQ31Data Input/OutputMultiplexed data input / output pin
V
DD/VSSPower Supply/GroundPower supply for internal circuits and input buffers
V
DDQ/VSSQData Output Power/GroundPower supply for output buffers
NCNo ConnectionNo connection
The system clock input. All other inputs are registered to the SDRAM
on the rising edge of CLK.
Controls internal clock signal and when deactivated, the SDRAM will be one
of the states among power down, suspend or self refresh
Selects bank to be activated during RAS
Selects bank to be read/written during CAS