Hynix HMT112S6TFR8C, HMT125S6TFR8C User Manual
Rev. 1.2 / Jul. 2010 1
204pin DDR3 SDRAM SODIMM
*Hynix Semiconductor reserves the right to change products or specifications without notice.
DDR3 SDRAM
Unbuffered SODIMMs
Based on 1Gb T-die
HMT112S6TFR8C
HMT125S6TFR8C
Rev. 1.2 / Jul. 2010 2
Revision History
Revision No. History Draft Date Remark
0.1 Initial Release Sep.2009 Preliminary
1.0 JEDEC Update Nov. 2009 Web posting
1.1 Add supported CL5 Jun. 2010 Web posting
1.2 DIMM Outline Corrected Jul. 2010 Web posting
Rev. 1.2 / Jul. 2010 3
Description
Hynix Unbuffered Small Outline DDR3 SDRAM DIMMs (Unbuffered Small Outline Double Data Rate Synchronous DRAM Dual In-Line Memory Modules) are low power, high-speed operation memory modules
that use Hynix DDR3 SDRAM devices. These Unbuffered DDR3 SDRAM SODIMMs are intended for use as
main memory when installed in systems such as mobile personal computers.
Features
* This product is in compliance with the RoHS directive.
Ordering Information
Part Number Density Organization Component Composition
# of
ranks
HMT112S6TFR8C-G7/H9 1GB 128Mx64 128Mx8(H5TQ1G83TFR)*8 1
HMT125S6TFR8C-G7/H9 2GB 256Mx64 128Mx8(H5TQ1G83TFR)*16 2
• VDD=1.5V +/- 0.075V
• VDDQ=1.5V +/- 0.075V
• VDDSPD=3.0V to 3.6V
• Functionality and operations comply with the
DDR3 SDRAM datasheet
• 8 internal banks
• Data transfer rates: PC3-10600, PC3-8500, or
PC3-6400
• Bi-directional Differential Data Strobe
• 8 bit pre-fetch
• Burst Length (BL) switch on-the-fly: BL 8 or BC
(Burst Chop) 4
• On Die Termination (ODT) supported
• RoHS compliant
Rev. 1.2 / Jul. 2010 4
Key Parameters
Speed Grade
Address Table
MT/s Grade
tCK
(ns)
CAS
Latency
(tCK)
tRCD
(ns)
tRP
(ns)
tRAS
(ns)
tRC
(ns)
CL-tRCD-tRP
DDR3-1066 -G7 1.875 7 13.125 13.125 37.5 50.625 7-7-7
DDR3-1333 -H9 1.5 9 13.5 13.5 36 49.5 9-9-9
Grade
Frequency [MHz]
Remark
CL5 CL6 CL7 CL8 CL9 CL10
-G7 667 800 1066 1066
-H9 667 800 1066 1066 1333 1333
1GB(1Rx8) 2GB(2Rx8)
Refresh Method 8K/64ms 8K/64ms
Row Address A0-A13 A0-A13
Column Address A0-A9 A0-A9
Bank Address BA0-BA2 BA0-BA2
Page Size 1KB 1KB
Rev. 1.2 / Jul. 2010 5
Pin Descriptions
Pin Name Description
Num
ber
Pin Name Description
Num
ber
CK[1:0] Clock Input, positive line 2 DQ[63:0] Data Input/Output 64
CK
[1:0] Clock Input, negative line 2 DM[7:0] Data Masks 8
CKE[1:0] Clock Enables 2 DQS[7:0] Data strobes 8
RAS Row Address Strobe 1 DQS[7:0] Data strobes, negative line 8
CAS
Column Address Strobe 1 EVENT Temperature event pin 1
WE
Write Enable 1 TEST
Logic Analyzer specific test pin (No
connect on SODIMM)
1
S
[1:0] Chip Selects 2 RESET Reset Pin 1
A[9:0],A11,
A[15:13]
Address Inputs 14
V
DD
Core and I/O Power 18
A10/AP Address Input/Autoprecharge 1
V
SS
Ground 52
A12/BC
Address Input/Burst chop 1
BA[2:0] SDRAM Bank Addresses 3
V
REFDQ
Input/Output Reference
1
ODT[1:0] On Die Termination Inputs 2
V
REFCA
1
SCL
Serial Presence Detect (SPD)
Clock Input
1
V
TT
Termination Voltage 2
SDA SPD Data Input/Output 1
V
DDSPD
SPD Power 1
SA[1:0] SPD Address Inputs 2 NC Reserved for future use 2
Total:
204
Rev. 1.2 / Jul. 2010 6
Input/Output Functional Descriptions
Symbol Type Polarity Function
CK0/CK0
CK1/CK1
IN Cross Point
The system clock inputs. All address and command lines are sampl ed on the cr oss point
of the rising edge of CK and falling edge of CK
. A Delay Locked Loop (DLL) circuit is
driven from the clock inputs and output timing for read operations is synchronized to the
input clock.
CKE[1:0] IN
Active
High
Activates the DDR3 SDRAM CK signal when high and deactivates the CK signal when
low. By deactivating the clocks, CKE low initiates the Power Down mode or the Self
Refresh mode.
S
[1:0] IN
Active
Low
Enables the associated DDR3 SDRAM command decoder when low and disables the
command decoder when high. When the command decoder is disabl ed, new commands
are ignored but previous operations continue. Rank 0 is selected by S0
; Rank 1 is
selected by S1
.
ODT[1:0] IN
Active
High
Asserts on-die termination for DQ, DM, DQS, and DQS
signals if enabled via the DDR3
SDRAM mode register.
R
AS, CAS, WE IN
Active
Low
When sampled at the cross point of the rising edge of CK, signals CAS
, RAS, and WE
define the operation to be executed by the SDRAM.
V
REFDQ
V
REFCA
Supply Reference voltage for SSTL15 inputs.
BA[2:0] IN — Selects which SDRAM internal bank of eight is activated.
A[9:0],
A10/AP,
A11,
A12/BC
A[15:13]
IN —
During a Bank Activate command cycle, defines the row address when sampled at the
cross point of the rising edge of CK and falling edge of CK
. During a Read of Write command cycle, defines the column address when sampled at the cross point of the rising
edge of CK and falling edge of CK
. In addition to the column address, AP is used to
invoke autoprecharge operation at the end of the burst read or write cycle. If AP is high
autoprecharge is selected and BA0-BAn defines the bank to be precharged. If AP is low,
autoprecharge is disabled. During a Precharge command cycle, AP is used in conjunction
with BA0-BAn to control which bank(s) to precharge. If AP is high, all banks will be precharged regardless of the state of BA0-BAn inputs. If AP is low, then BA0-BAn are used
to define which bank to precharge. A12(BC
) is samples during READ and WRITE commands to determine if burst chop (on-the-fly) will be performed (HIGH, no burst chop:
LOW, burst chopped).
DQ[63:0] I/O — Data Input/Output pins.
DM[7:0] IN
Active
High
The data write masks, associated with one data byte. In Write mode, DM operates as a
byte mask by allowing input data to be written if it is low but blocks the write operation
if it is high. In Read mode, DM lines have no effect.
V
DD
, V
DDSPD
V
SS
Supply Power supplies for core, I/O, Serial Presence Detect, and ground for the module.
DQS[7:0],
DQS[7:0]
I/O Cross Point
The data strobes, associated with one data byte, sourced with data transfers. In Write
mode, the data strobe is sourced by the controller and is centered in the data window.
In Read mode, the data strobe is sourced by the DDR3 SDRAMs and is sent at the leading edge of the data window. DQS
signals are complements, and timing is relative to the
crosspoint of respective DQS and DQS
.
SA[1:0] IN —
These signals are tied at the system planar to either V
SS
or V
DDSPD
to configure the
serial SPD EEPROM address range.
Rev. 1.2 / Jul. 2010 7
SDA I/O —
This bidirectional pin is used to transfer data into or out of the SPD EEPROM. A resistor
must be connected from the SDA bus line to V
DDSPD
on the system planar to act as a
pullup.
SCL IN —
This signal is used to clock data into and out of the SPD EEPROM. A resistor may be connected from the SCL bus time to V
DDSPD
on the system planar to act as a pullup.
EVENT
OUT
(open
drain)
Active Low
This signal indicates that a thermal event has been d e tected in the thermal sensing
device.The system should guarantee the electrical level requirement is met for the
EVENT
pin on TS/SPD part.
No pull-up resister is provided on DIMM.
V
DDSPD
Supply
Serial EEPROM positive power supply wired to a separate power pin at the connector
which supports from 3.0 Volt to 3.6 Volt (nominal 3.3V) operation.
RESET
IN
The RESET
pin is connected to the RESET pin on the register and to the RESET pin on
the DRAM.
TEST Used by memory bus analysis tools (unused (NC) on memory DIMMs)
Symbol Type Polarity Function
Rev. 1.2 / Jul. 2010 8
Pin Assignments
Pin #Front
Side
Pin #Back
Side
Pin #Front
Side
Pin #Back
Side
Pin #Front
Side
Pin #Back
Side
Pin #Front
Side
Pin #Back
Side
1
V
REF
DQ
2
V
SS
53 DQ19 54
V
SS
105
V
DD
106
V
DD
157 DQ42 158 DQ46
3
V
SS
4
DQ4
55
V
SS
56
DQ28
107
A10/AP
108
BA1
159
DQ43
160
DQ47
5 DQ0 6 DQ5 57 DQ24 58 DQ29 109 BA0 110 RAS 161
V
SS
162
V
SS
7DQ18
V
SS
59 DQ25 60
V
SS
111
V
DD
112
V
DD
163 DQ48 164 DQ52
9
V
SS
10
DQS0
61
V
SS
62
DQS3
113
WE
114
S0
165
DQ49
166
DQ53
11 DM0 12 DQS0 63 DM3 64 DQS3 115 CAS 116 ODT0 167
V
SS
168
V
SS
13
V
SS
14
V
SS
65
V
SS
66
V
SS
117
V
DD
118
V
DD
169
DQS6
170 DM6
15 DQ2 16 DQ6 67 DQ26 68 DQ30 119
A13
2
120 ODT1 171 DQS6 172
V
SS
17
DQ3
18
DQ7
69
DQ27
70
DQ31
121
S1
122
NC
173
V
SS
174
DQ54
19
V
SS
20
V
SS
71
V
SS
72
V
SS
123
V
DD
124
V
DD
175 DQ50 176 DQ55
21 DQ8 22 DQ12 73 CKE0 74 CKE1 125 TEST 126
V
REF
CA
177 DQ51 178
V
SS
23
DQ9
24
DQ13
75
V
DD
76
V
DD
127
V
SS
128
V
SS
179
V
SS
180
DQ60
25
V
SS
26
V
SS
77 NC 78
A15
2
129 DQ32 130 DQ36 181 DQ56 182 DQ61
27
DQS1
28 DM1 79 BA2 80
A14
2
131 DQ33 132 DQ37 183 DQ57 184
V
SS
29
DQS1
30
RESET
81
V
DD
82
V
DD
133
V
SS
134
V
SS
185
V
SS
186
DQS7
31
V
SS
32
V
SS
83 A12/BC 84 A11 135
DQS4
136 DM4 187 DM7 188 DQS7
33 DQ10 34 DQ14 85 A9 86 A7 137 DQS4 138
V
SS
189
V
SS
190
V
SS
35
DQ11
36
DQ15
87
V
DD
88
V
DD
139
V
SS
140
DQ38
191
DQ58
192
DQ62
37
V
SS
38
V
SS
89 A8 90 A6 141 DQ34 142 DQ39 193 DQ59 194 DQ63
39 DQ16 40 DQ20 91 A5 92 A4 143 DQ35 144
V
SS
195
V
SS
196
V
SS
41
DQ17
42
DQ21
93
V
DD
94
V
DD
145
V
SS
146
DQ44
197
SA0
198
EVENT
43
V
SS
44
V
SS
95 A3 96 A2 147 DQ40 148 DQ45 199
VDD
SPD
200 SDA
45
DQS2
46 DM2 97 A1 98 A0 149 DQ41 150
V
SS
201 SA1 202 SCL
47
DQS2
48
V
SS
99
V
DD
100
V
DD
151
V
SS
152
DQS5
203
V
TT
204
V
TT
49
V
SS
50 DQ22 101 CK0 102 CK1 153 DM5 154 DQS5
51 DQ18 52 DQ23 103 CK0 104 CK1 155
V
SS
156
V
SS
NC = No Connect; RFU = Reserved Future Use
1. TEST (pin 125) is reserved for bus analysis probes and is NC on normal memory modules.
2. This address might be connected to NC balls of the DRAMs (depending on density); either way they will be connected to the termination resistor.
Rev. 1.2 / Jul. 2010 9
Functional Block Diagram
1GB, 128Mx64 Module(1Rank of x8)
DQS0
DQS0
DM0
DQ[0:7]
DQS
DQS
DM
DQ [0:7]
D0
RAS
CAS
S0
WE
CK0
CK0
CKE0
ODT0
240ohm
ZQ
+/-1%
RAS
CAS
CS
WE
CK
CK
CKE
ODT
A[O:N]/BA[O:N]
DQS
DQS
DM
DQ [0:7]
D4
240ohm
ZQ
+/-1%
RAS
CAS
CS
WE
CK
CK
CKE
ODT
A[O:N]/BA[O:N]
DQS2
DQS2
DM2
DQS
DQS
DM
DQ [0:7]
D1
240ohm
ZQ
+/-1%
RAS
CAS
CS
WE
CK
CK
CKE
ODT
A[O:N]/BA[O:N]
DQS
DQS
DM
DQ [0:7]
D5
240ohm
ZQ
+/-1%
RAS
CAS
CS
WE
CK
CK
CKE
ODT
A[O:N]/BA[O:N]
DQS4
DQS4
DM4
DQS
DQS
DM
DQ [0:7]
D2
240ohm
ZQ
+/-1%
RAS
CAS
CS
WE
CK
CK
CKE
ODT
A[O:N]/BA[O:N]
LDQS
LDQS
LDM
DQ [0:7]
D6
240ohm
ZQ
+/-1%
RAS
CAS
CS
WE
CK
CK
CKE
ODT
A[O:N]/BA[O:N]
DQS3
DQS3
DM3
DQS
DQS
DM
DQ [0:7]
D3
240ohm
ZQ
+/-1%
RAS
CAS
CS
WE
CK
CK
CKE
ODT
A[O:N]/BA[O:N]
LDQS
LDQS
LDM
DQ [0:7]
D7
240ohm
ZQ
+/-1%
RAS
CAS
CS
WE
CK
CK
CKE
ODT
A[O:N]/BA[O:N]
DQS1
DQS1
DM1
DQ[8:15]
DQS3
DQS3
DM3
DQ[24:31]
DQS5
DQS5
DM5
DQ[40:47]
DQS7
DQS7
DM7
DQ[56:63]
A2
Temp Sensor
SDA
D0–D7
VDDSPD
SPD/TS
D0–D7
V
REF
CA
SCL
V
tt
D0–D7
V
DD
EVENT
A1
A0
SCL
SA0
SA1
(with SPD)
EVENT
A2
SDA
SCL
WP
A1
A0
SCL
SA0
SA1
(SPD)
Vtt
V
REF
DQ
V
SS
CK0
CK1
CK0
CK1
S1
ODT1
D0–D7, SPD, Temp sensor
D0–D7
D0–D7
NC
NC
NOTES
1. DQ wiring may differ from that
shown however, DQ, DM, DQS, and
DQS
relationships are maintained as
shown
Address and Control Lines
Rank 0
The SPD may be
integrated with the Temp
Sensor or may be
a separate component
D0 D1 D2 D3
Vtt
D4 D5 D6 D7
Vtt
V1
V2 V4V3
V1
V2 V4V3
CKE1
EVENT
RESET
Temp Sensor
D0-D7
NC
Terminated near
card edge
Rev. 1.2 / Jul. 2010 10
2GB, 256Mx64 Module(2Rank of x8)
DQS3
DQS3
DM3
DQ[24:31]
DQS
DQS
DM
DQ [0:7]
D11
RAS
CAS
S1
WE
CK1
CK1
CKE1
ODT1
A[O:N]/BA[O:N]
240ohm
ZQ
+/-1%
Vtt
RAS
CAS
CS
WE
CK
CK
CKE
ODT
A[O:N]/BA[O:N]
LDQS
LDQS
LDM
DQ [0:7]
D3
240ohm
ZQ
+/-1%
RAS
CAS
CS
WE
CK
CK
CKE
ODT
A[O:N]/BA[O:N]
CK0
CK0
CKE0
ODT0
S0
A2
Temp S ens or
SDA
D0–D15
VDDSPD
SPD/TS
D0–D15
V
REF
CA
SCL
V
tt
D0–D15
V
DD
EVENT
A1
A0
SCL
SA0
SA1
(with SPD)
EVENT
A2
SDA
SCL
WP
A1
A0
SCL
SA0
SA1
(SPD)
V
tt
V
REF
DQ
V
SS
CK0
CK0
CK1
CK1
CKE0
CKE1
D0–D15, SPD, Temp sensor
D0–D7
D8–D15
D0-D7
D8-D15
NOTES
1. DQ wiring may differ from that shown
however, DQ, DM, DQS, and DQS
rela-
tionships are maintained as shown
Rank 0
D0–D7
D8–D15
Rank 1
DQS1
DQS1
DM1
DQ[8:15]
DQS
DQS
DM
DQ [0:7]
D1
240ohm
ZQ
+/-1%
RAS
CAS
CS
WE
CK
CK
CKE
ODT
A[O:N]/BA[O:N]
LDQS
LDQS
LDM
DQ [0:7]
D9
240ohm
ZQ
+/-1%
RAS
CAS
CS
WE
CK
CK
CKE
ODT
A[O:N]/BA[O:N]
DQS0
DQS0
DM0
DQ[0:7]
DQS
DQS
DM
DQ [0:7]
D0
240ohm
ZQ
+/-1%
RAS
CAS
CS
WE
CK
CK
CKE
ODT
A[O:N]/BA[O:N]
LDQS
LDQS
LDM
DQ [0:7]
D8
240ohm
ZQ
+/-1%
RAS
CAS
CS
WE
CK
CK
CKE
ODT
A[O:N]/BA[O:N]
DQS4
DQS4
DM4
DQ[32:39]
DQS6
DQS6
DM6
DQ[48:55]
DQS7
DQS7
DM7
DQ[56:43]
DQS5
DQS5
DM5
DQ[40:47]
Vtt Vtt
VDD VDD
Cterm Cterm
D12
D4
DQS
DQS
DM
DQ [0:7]
240ohm
ZQ
+/-1%
RAS
CAS
CS
WE
CK
CK
CKE
ODT
A[O:N]/BA[O:N]
DQS
DQS
DM
DQ [0:7]
240ohm
ZQ
+/-1%
RAS
CAS
CS
WE
CK
CK
CKE
ODT
A[O:N]/BA[O:N]
D6
D14
DQS
DQS
DM
DQ [0:7]
ZQ
+/-1%
RAS
CAS
CS
WE
CK
CK
CKE
ODT
A[O:N]/BA[O:N]
DQS
DQS
DM
DQ [0:7]
ZQ
+/-1%
RAS
CAS
CS
WE
CK
CK
CKE
ODT
A[O:N]/BA[O:N]
240ohm 240ohm
D7
D15
DQS
DQS
DM
DQ [0:7]
ZQ
+/-1%
RAS
CAS
CS
WE
CK
CK
CKE
ODT
A[O:N]/BA[O:N]
DQS
DQS
DM
DQ [0:7]
ZQ
+/-1%
RAS
CAS
CS
WE
CK
CK
CKE
ODT
A[O:N]/BA[O:N]
240ohm 240ohm
DQS2
DQS2
DM2
DQ[6:23]
DQS
DQS
DM
DQ [0:7]
D2
240ohm
ZQ
+/-1%
RAS
CAS
CS
WE
CK
CK
CKE
ODT
A[O:N]/BA[O:N]
LDQS
LDQS
LDM
DQ [0:7]
D10
240ohm
ZQ
+/-1%
RAS
CAS
CS
WE
CK
CK
CKE
ODT
A[O:N]/BA[O:N]
D5
D13
DQS
DQS
DM
DQ [0:7]
ZQ
+/-1%
RAS
CAS
CS
WE
CK
CK
CKE
ODT
A[O:N]/BA[O:N]
DQS
DQS
DM
DQ [0:7]
ZQ
+/-1%
RAS
CAS
CS
WE
CK
CK
CKE
ODT
A[O:N]/BA[O:N]
240ohm 240ohm
S0
ODT0
S1
ODT1
EVENT
RESET
D0–D7
D8–D15
Temp Sensor
D0-D15
D0–D7
D8–D15
The SPD may be
integrated with the Temp
Sensor or may be
a separate component
D0
V1
V9
D1 D11
D2 D13
D4 D14
D15
D9
D8 D10
D3 D12
D5 D7
D6
Vtt
V1V2
V3
V4 V5 V6
V8
V7
V6
V8
V7
V5
V9V1
V4
V3
V2
Rev. 1.2 / Jul. 2010 11
Absolute Maximum Ratings
Absolute Maximum DC Ratings
Notes:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rat
-
ing conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement
conditions, please refer to JESD51-2 standard.
3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must not be greater than
0.6XVDDQ,When VDD and VDDQ are less than 500mV; VREF may be equal to or less than 300mV.
DRAM Component Operating Temperature Range
Notes:
1. Operating Temperature TOPER is the case surface temperature on the center / top side of the DRAM. For measurement conditions, please refer to the JEDEC document JESD51-2.
2. The Normal Temperature Range specifies the temperatures where all DRAM specifications will be supported. During operation, the DRAM case temperature must be maintained between 0 - 85oC under all operating conditions.
3. Some applications require operation of the DRAM in the Extended Temperature Range between 85oC and 95oC
case temperature. Full specifications are guaranteed in this range, but the following additional conditions apply:
a. Refresh commands must be doubled in frequency, therefore reducing the Refresh interval tREFI to 3.9 µs. It
is also possible to specify a component with 1X refresh (tREFI to 7.8µs) in the Extended Temperature Range.
Please refer to the DIMM SPD for option availability
b. If Self-Refresh operation is required in the Extended Temperature Range, then it is mandatory to either use
the Manual Self-Refr esh mode with Extended Temperature Range capability (MR2 A6 = 0b and MR2 A7 = 1b)
or enable the optional Auto Self-Refresh mode (MR2 A6 = 1b and MR2 A7 = 0b). Hynix DDR3 SDRAMs sup
port Auto Self-Refresh and Extended Temperature Range and please refer to Hynix component datasheet
and/or the DIMM SPD for tREFI requirements in the Extended Temperature Range.
Absolute Maximum DC Ratings
Symbol Parameter Rating Units Notes
VDD
Voltage on VDD pin relative to Vss
- 0.4 V ~ 1.975 V V 1,
VDDQ
Voltage on VDDQ pin relative to Vss
- 0.4 V ~ 1.975 V V 1,
V
IN
, V
OUT
Voltage on any pin relative to Vss
- 0.4 V ~ 1.975 V V 1
T
STG
Storage Temperature
-55 to +100
o
C1, 2
Temperature Range
Symbol Parameter Rating Units Notes
T
OPER
Normal Operating Temperature Range
0 to 85
o
C 1,2
Extended Temperature Range
85 to 95
o
C1,3
Rev. 1.2 / Jul. 2010 12
AC & DC Operating Conditions
Recommended DC Operating Conditions
Notes:
1. Under all conditions, VDDQ must be less than or equal to VDD.
2. VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
AC & DC Input Measurement Levels
AC and DC Logic Input Levels for Single-Ended Signals
AC and DC Input Levels for Single-Ended Command and Address Signals
Notes:
1. For input only pins except RESET
, Vref = VrefCA (DC).
2. Refer to “Overshoot and Undershoot Specifications” on page 25.
3. The ac peak noise on V
Ref
may not allow V
Ref
to deviate from V
RefCA(DC)
by more than +/-1% VDD (for
reference: approx. +/- 15 mV).
4. For reference: approx. VDD/2 +/- 15 mV.
Recommended DC Operating Conditions
Symbol Parameter
Rating
Units Notes
Min. Typ. Max.
VDD
Supply Voltage
1.425 1.500 1.575 V 1,2
VDDQ
Supply Voltage for Output
1.425 1.500 1.575 V 1,2
Single Ended AC and DC Input Levels for Command and ADDress
Symbol Parameter
DDR3-800/1066/1333
Unit Notes
Min Max
VIH.CA(DC100) DC input logic high Vref + 0.100 VDD V 1
VIL.CA(DC100) DC input logic low VSS Vref - 0.100 V 1
VIH.CA(AC175) AC input logic high Vref + 0.175 Note2 V 1, 2
VIL.CA(AC175) AC input logic lo w Note2 Vref - 0.175 V 1, 2
VIH.CA(AC150) AC Input logic high Vref + 0.150 Note2 V 1, 2
VIL.CA(AC150) AC input logic lo w Note2 Vref - 0.150 V 1, 2
V
RefCA(DC
)
Reference Voltage for ADD, CMD inputs 0.49 * VDD 0.51 * VDD V 3, 4
Rev. 1.2 / Jul. 2010 13
AC and DC Input Levels for Single-Ended Signals
DDR3 SDRAM will support two Vih/Vil AC levels for DDR3-800 and DDR3-1066 as specified in the table
below. DDR3 SDRAM will also support corresponding tDS values (Table 41 and Table 47 in “ DDR3 Device
Operation”) as well as derating tables in Table 44 of “DDR3 Device Operation” depending on Vih/Vil AC lev-
els.
Notes:
1. Vref = VrefDQ (DC).
2. Refer to “Overshoot and Undershoot Specifications” on page 25.
3. The ac peak noise on V
Ref
may not allow V
Ref
to deviate from V
RefDQ(DC)
by more than +/-1% VDD (for
reference: approx. +/- 15 mV).
4. For reference: approx. VDD/2 +/- 15 mV.
Single Ended AC and DC Input Levels for DQ and DM
Symbol Parameter
DDR3-800/1066 DDR3-1333
Unit Notes
Min Max Min Max
VIH.CA(DC100) DC input logic high Vref + 0.100 VDD Vref + 0.100 VDD V 1
VIL.CA(DC100) DC input logic low VSS Vref - 0.100 VSS Vref - 0.100 V 1
VIH.CA(AC175) AC input logic high Vref + 0.175 Note2 - - V 1, 2
VIL.CA(AC175) AC input logic low Note2 Vref - 0.175 - - V 1, 2
VIH.CA(AC150) AC Input logic high Vref + 0.150 Note2 Vref + 0.150 Note2 V 1, 2
VIL.CA(AC150) AC input logic low Note2 Vref - 0.150 Note2 Vref - 0.150 V 1, 2
V
RefDQ(DC
)
Reference Voltage for DQ,
DM inputs
0.49 * VDD 0.51 * VDD 0.49 * VDD 0.51 * VDD V 3, 4
Rev. 1.2 / Jul. 2010 14
Vref Tolerances
The dc-tolerance limits and ac-noise limits for the reference voltages
VRefCA
and V
RefDQ
are illustrated in
figure below. It shows a valid reference voltage V
Ref
(t) as a function of time. (V
Ref
stands for V
RefCA
and
V
RefDQ
likewise).
V
Ref
(DC) is the linear average of V
Ref
(t) over a very long period of time (e.g. 1 sec). This average has to
meet the min/max requirements in the table “Differential Input Slew Rate Definition” on page 20. Furthermore V
Ref
(t) may temporarily deviate from V
Ref (DC)
by no more than +/- 1% VDD.
Illustration of V
Ref(DC)
tolerance and V
Ref
ac-noise limits
The voltage levels for setup and hold time measurements V
IH(AC)
, V
IH(DC)
, V
IL(AC)
, and V
IL(DC)
are depen-
dent on V
Ref
.
“V
Ref
” shall be understood as V
Ref(DC)
, as defined in figure above.
This clarifies that dc-variations of V
Ref
affect the absolute voltage a signal has to reach to achieve a valid
high or low level and therefore the time to which setup and hold is measured. System timing and voltage
budgets need to account for V
Ref(DC)
deviations from the optimum position within the data-eye of the input
signals.
This also clarifies that the DRAM setup/hold specification and derating values need to include time and
voltage associated with V
Ref
ac-noise. Timing and voltage effects due to ac-noise on V
Ref
up to the speci-
fied limit (+/- 1% of VDD) are included in DRAM timings and their associated deratings.
VDD
VSS
VDD/2
V
Ref(DC)
V
Ref
ac-noise
voltage
time
V
Ref(DC)max
V
Ref(DC)min
V
Ref
(t)
Rev. 1.2 / Jul. 2010 15
AC and DC Logic Input Levels for Differential Signals
Differential signal definition
Definition of differential ac-swing and “time above ac-level” t
DVAC
time
Differential Input Voltage(i.e.DQS - DQS#, CK - CK#)
V
IL.DIFF.AC.MAX
V
IL.DIFF.MAX
0
V
IL.DIFF.MIN
V
IL.DIFF.AC.MIN
t
DVAC
half cycle
t
DVAC
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