HYNIX GM71CS17800CLJ-5, GM71CS17800CJ-7, GM71CS17800CJ-6, GM71CS17800CJ-5, GM71CS17800CT-7 Datasheet

The GM71C(S)17800C/CL is the new
generation dynamic RAM organized 2,097,152
x 8 bit. GM71C(S)17800C/CL has realized
higher density, higher performance and various
functions by utilizing advanced CMOS process
technology. The GM71C(S)17800C/CL offers
Fast Page Mode as a high speed access mode.
Multiplexed address inputs permit the
GM71C(S)17800C/CL to be packaged in
standard 400 mil 28pin plastic SOJ, and standard
400mil 28 pin plastic TSOP II. The package size
provides high system bit densities and is
compatible with widely available automated
testing and insertion equipment.

Description Features

* 2,097,152 Words x 8 Bit Organization
* Fast Page Mode Capability
* Single Power Supply (5V+/-10%)
* Fast Access Time & Cycle Time

(Unit: ns)

* Low Power
Active : 715/660/605mW (MAX)
Standby : 11mW (CMOS level : MAX)

0.83mW (L-version : MAX)
* RAS Only Refresh, CAS before RAS Refresh,
Hidden Refresh Capability
* All inputs and outputs TTL Compatible
* 2048 Refresh Cycles/32ms
* 2048 Refresh Cycles/128ms (L- version)
* Battery Back Up Operation (L- version)
* Self Refresh Operation (L-version)

Pin Configuration

2,097,152 WORDS x 8 BIT

CMOS DYNAMIC RAM

28 SOJ

(Top View)

VSS
I/O0
I/O1
I/O2
I/O3

1
2
3
4
5

WE

RAS

A10

A0
A1

7
8

9
10
11

6

A2
A3

VCC

12
13
14

VSS
I/O7
I/O6
I/O5
I/O4

24

25

26

27

28

OE

A8
A7
A6

18

19

20

21

22

CAS

23

A5
A4
VSS

15

16

17

NC A9

28 TSOP II

VSS
I/O0
I/O1
I/O2
I/O3

1
2
3
4
5

WE

RAS

A10

A0
A1

7
8

9
10
11

6

A2
A3

VCC

12
13
14

VSS
I/O7
I/O6
I/O5
I/O4

24

25

26

27

28

OE

NC

A8
A7
A6

18

19

20

21

22

CAS

23

A5
A4
VSS

15

16

17

A9

GM71C(S)17800C/CL-5
GM71C(S)17800C/CL-6

GM71C(S)17800C/CL-7

tRAC tCAC tRC tPC

5060131590

1103540

70 18 130 45

GM71C17800C

GM71CS17800CL

Rev 0.1 / Apr’ 01

GM71C17800C

GM71CS17800CL

Rev 0.1 / Apr’ 01

Pin Description

Pin Function Pin Function

A0-A10
A0-A10

I/O0-I/O7

RAS

WE

VCC

VSS
NC

Address Inputs
Refresh Address Inputs
Data-In/Out
Row Address Strobe

Read/Write Enable

Power (+5V)
Ground
No Connection

Ordering Information

CAS Column Address Strobe

OE Output Enable

Absolute Maximum Ratings*

PT 1.0

Power Dissipation

W

Note: Operation at or above Absolute Maximum Ratings can adversely affect device reliability.

Symbol Parameter Rating Unit

TA
TSTG
VIN/OUT
VCC
IOUT

0 ~ +70

-55 ~ +125

50

Ambient Temperature under Bias
Storage Temperature (Plastic)
Voltage on any Pin Relative to VSS
Voltage on VCC Relative to VSS
Short Circuit Output Current

C
C

V
V

mA

-1.0 ~ +7.0V

-1.0 ~ +7.0V

Recommended DC Operating Conditions (TA = 0 ~ +70C)

Symbol Parameter Unit

VCC

VIH
VIL

Supply Voltage
Input High Voltage
Input Low Voltage

V
V
V

Max

5.5

6.0

0.8

Typ

5.0

-

-

Min

4.5

2.4

-1.0

Note: All voltage referred to Vss.

Type No. Access Time Package

GM71C(S)17800CJ/CLJ -5
GM71C(S)17800CJ/CLJ -6
GM71C(S)17800CJ/CLJ -7

50ns
60ns
70ns

400 Mil
28 Pin
Plastic SOJ

50ns
60ns
70ns

400 Mil
28 Pin
Plastic TSOP II

GM71C(S)17800CT/CLT -5
GM71C(S)17800CT/CLT -6
GM71C(S)17800CT/CLT -7

GM71C17800C

GM71CS17800CL

Rev 0.1 / Apr’ 01

DC Electrical Characteristics (VCC = 5V+/-10%, Vss = 0V, TA = 0 ~ 70C)

Symbol Parameter Note

VOH

VOL

Output Level
Output "H" Level Voltage (IOUT = -5mA)

UnitMax

VCC

0.4

Min

2.4

0

Output Level
Output "L" Level Voltage (IOUT = 4.2mA)

ICC1

Operating Current
Average Power Supply Operating Current
(RAS, CAS Cycling: tRC = tRC min)

ICC2 Standby Current (TTL)

Power Supply Standby Current
(RAS, CAS = VIH, DOUT = High-Z)

2-

ICC3 RAS Only Refresh Current

Average Power Supply Current
RAS Only Refresh Mode

(tRC = tRC min)

ICC4

ICC5 Standby Current (CMOS)

Power Supply Standby Current
(RAS, CAS >= VCC - 0.2V, Dout = High-Z)

1

-

ICC6 CAS-before-RAS Refresh Current

(tRC = tRC min)

150

-

IL(I)

10-10

IL(O)

10-10

Input Leakage Current
Any Input (0V<=VIN<= 6V)

Output Leakage Current

(DOUT is Disabled, 0V<=VOUT<= 6V)
Note: 1. ICC depends on output load condition when the device is selected.
ICC(max) is specified at the output open condition.

2. Address can be changed once or less while RAS = VIL.

3. Address can be changed once or less while CAS = VIH.

4. CAS = L (<=0.2) while RAS = L (<=0.2).

5. L-version.

Fast Page Mode Current
Average Power Supply Current
Fast Page Mode
(tPC = tPC min)

110-50ns
60ns
70ns

100

90

-

-

-

110-50ns
60ns
70ns

100

90

-

-

100-50ns

60ns
70ns

90
85

-

110-50ns
60ns

70ns

-

-

100

90

ICC7

ICC8

V

V

mA

mA

uA

uA

uA

mA 1, 2

mA 2

mA 1, 3

mA

5-

Standby Current RAS = VIH

CAS = VIL
DOUT = Enable

mA 1

Battery Back Up Operating Current
(Standby with CBR Refresh)
(tRC=62.5us, tRAS<=0.3us, DOUT=High-Z)

500- 4,5uA

ICC9

uA

Self-Refresh Mode Current
(RAS, CAS<=0.2V, DOUT=High-Z)

300-

5

5