HYNIX GL3276A Datasheet

1
GL3276A
Waveform
shaper
Initial
Description
The GL3276A is a bipolar analog ICs specifically developed for use in infrared remote control system receiving preamplifiers. Capable of accepting a photodiode directly, these ICs house a high gain initial amplifier, a limiter, a band-pass filter, a detection circuit and a waveform shaping circuit assembled on a single chip.
Features
Less changes of malfunction associated with
a high-frequency lighting fluorscent lamp internal trap circuit.
The central frequency can be varied with an
external resistance: fo=30 to 80KHz fo rimming reduce central frequency variance.
Few external parts.
Internal pull-up resistance and power filter resistance.
Lower-capacitance external capacitor
Open collector output
Open collector output with a pull-up resistance.
Block Diagram
IN+
20
Stage
ABLC
IN-
7 5 20
R
1
C
1
Limiter
GND
Pin configuration
V
CC1
Out
V
CC2
fo
4 3 1
f
0
BPF
TRAP
Detector
+
C
D
V
C
2
R
(SOP)
1
2
3
4
CC2
S
GL3276A
GL3276A
IN+
8
IN-
7
CD 6
GND
5
V
CC1
R
L
OUT
2
OUTPUT
2
GL3276A
Absolute Maximum Ratings(Ta=25
¡É)
SYMBOL PARAMETER VALUE UNIT
VCC Supply voltage 6.0 V I
Output Current 2.5 mA
OUT
PD
T
Operating temperature
OPR
T
Storage temperature -40 to +125 ¡É
STG
Allowable power
dissipation
270 mW
- 20 to +75 ¡É
Recommended Operating Condition
SYMBOL PARAMETER
VCC Supply voltage 4.5 5.0 5.5 V
fIN Input frequency
Electrical characteristics (VCC = 5.0V, Ta = 2.5
SYMBOL PARAMETER TEST CONDITION MIN TYP MAX UNIT REMARK
ICC Supply current 1.2 2.8 mA
VIN Input voltage
AV Voltage gain
FBW BPF bandwidth
rIN Input impedance
t
PW1
t
PW2
VOL VOH
Note 1 : rIN =
Output pulse width
Low Level output voltage Low Level output voltage
47
V
IN
(
X
K§Ù(where VIN=input level, VX=test value)
1)V
MIN TYP MAX UNIT
30 38 80 KHz
¡É)
IIN = 0A IIN=-330 µA
fIN=38kHz VIN=30 µV
P-P
-3dB Bandwidth VIN=30 µV
P-P
fIN=38kHz CW VIN=0.2 µV
P-P
2.0
0.6 70 76 80 dB
2.0 2.5 3.0 KHz 80 110 160 K§Ù note * 1
2.5
0.8
3.1 V
1.7
fIN=38kHz burstwave VIN=500 µV
P-P
440 770 µS
fIN=38kHz burstwave VIN=50mV
P-P
440 770 µS
0.2 0.4 V
4.8 5.0 V
note * 1
2 : input burst wave form
output pulse
600 µS
600 µS
38KHz Carrier
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