HT 2SC2881 Schematic [ru]
2SC2881
TRANSISTOR (NPN)
FEATURES
SOT-89-3L
1. BASE
z Small Flat Package
z High Transition Frequency
z High Voltage
2. COLLECTOR
3. EMITTER
z Complementary to 2SA1201
APPLICATIONS
z Power Amplifier and Voltage Amplifier
MAXIMUM RATINGS (T
=25℃ unless otherwise noted)
a
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
IC
PC
R
θJA
Tj
T
stg
Collector-Base Voltage 120 V
Collector-Emitter Voltage 120 V
Emitter-Base Voltage 5 V
Collector Current 800 mA
Collector Power Dissipation 500 mW
Thermal Resistance From Junction To Ambient 250
Junction Temperature 150
Storage Temperature -55~+150
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
=25℃ unless otherwise specified)
a
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
(BR)CBOIC
V
(BR)CEO
V
(BR)EBOIE
I
CBO
I
EBO
VCE=5V, IC=100mA 80 240
h
FE
V
CE(sat)
VBE VCE=5V, IC=0.5A 1 V
fT VCE=5V,IC=100mA
Cob VCB=10V, IE=0, f=1MHz 30 pF
=1mA,IE=0 120 V
IC=10mA,IB=0 120 V
=1mA,IC=0 5 V
VCB=120V,IE=0 0.1 µA
VEB=5V,IC=0 0.1 µA
IC=500mA,IB=50mA 1 V
120
MHz
CLASSIFICATION OF hFE
O Y
80–160 120–240
CO1 CY1
RANK
RANGE
MARKING
１
JinYu
semiconductor
www.htsemi.com
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