HSMC HML1225, HXL1225 Datasheet

HI-SINCERITY

MICROELECTRONICS CORP.

HML1225/HXL1225

0.8A 300/380 VOLTAGE SCRS IGT<200 uA

Description

The HML1225/HXL1225 series silicon controlled rectifiers are high
performance planner diffused PNPN devices. These parts are intended for
low cost high volume applications.

Spec. No. : Preliminary Data
Issued Date : 1992.11.25
Revised Date : 2001.06.29
Page No. : 1/2

Absolute Maximum Ratings

Parameter Part No. Symbol Min Max Unit Test Conditions
Repetitive Peak Off State
Voltage
On-State Current IT(rms) 0.8 - A
Average On-State Current IT(AV) 0.5 - A
Peak Reverse Gate
Voltage
Peak Gate Current IGM 1 - A 10us max
Gate Dissipation PG(AV) 0.1 - W 20ms max
Operating Temperature Tj -40 125
Storage Temperature Tstg -40 125
Soldering Temperature Tsld - 250

HXL1225

HML1225

(Ta=25°C)

VDRM
VDRM

VGRM 8 - V IGR=10uA

380
300

-

-

V
V

C

°

C

°

C

°

Tj=40°C to 125°C (RGK=1K)
TC=40°C

Half Cycle=180°,TC=40°C

1.6mm from case 10s max

Classification Of IGT

Rank AA AB AC AD B C

HML1225 10-18 uA 12-23 uA 17-28 uA 22-55 uA 45-105 uA -

HXL1225 10-18 uA 12-23 uA 17-28 uA 22-55 uA 45-105 uA 95-155 uA

Electrical Characteristics

Parameter Symbol Min Max Unit Test Conditions
Off-State Leakage Current IDRM - 0.1 mA
Off-State Leakage Current IDRM - 5 uA

On-State Voltage VT
On-State Threshold Voltage VT(TO) - 0.95 V

On-State Slops Resistance rT - 600 Ohm
Gate T rigger Current IGT - 200 uA VD=7V
Gate T r i gger Volt age VGT - 0.8 V VD=7V
Holding Current IH - 5 mA RGK=1K(ohm)
Latching Current IL - 6 mA RGK=1K(ohm)
Critical Rate of Voltage Rise dv/dt 25 - V/us
Crtical Rate of Current Rise di/dt 30 - A/us
Gate Controlled Delay Time tgd - 500 ns IG=10mA,diG/dt=0.1A/us

Commutated Turn-off Time tg - 200 us
Thermal Resistance junc.to case

Thermal Resistance junc. to amb

(Ta=25°C)

Rθjc
Rθja

-1.4V

-2.2V

100 - K/W
200 - K/W

@VDRM (RGK=1K), Tj=125°C
@VDRM (RGK=1K), Tj=25°C
at IT=0.4A, Tj=25°C
at IT=0.8A, Tj=25°C
Tj=125°C
Tj=125°C

VD=0.67*VDRM(RGK=1K), Tj=125°C
IG=10mA,diG/dt=0.1A/us, Tj=125°C

Tc=85°C,VD=0.67*VDRM
VR=35V,IT=IT(AV)

HML1225, HXL1225 HSMC Product Specification

HI-SINCERITY

g

MICROELECTRONICS CORP.

TO-92 Dimension

A

Spec. No. : Preliminary Data
Issued Date : 1992.11.25
Revised Date : 2001.06.29
Page No. : 2/2

α

2

Marking :

C

B

31

2

α

3

HSMC Logo

Part Number

Date Code

HSMC Logo

D

Part Number

H

α

I

1

G

Style : Pin 1.Cathode 2.Gate 3. Anode

Product Series

Rank

Laser Mark

Product Series

Ink Mark

E

DIM

F

Inches Millimeters Inches Millimeters

Min. Max. Min. Max.

3-Lead TO-92 Plastic Package

HSMC Packa

e Code : A

DIM

Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H ­C 0.5000 - 12.70 - I ­D 0.0142 0.0220 0.36 0.56
E-*0.0500 -

1.27

*

F 0.1323 0.1480 3.36 3.76

Notes :

Material :

• Lead : 42 Alloy ; solder plating

• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0

1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.

2.Controlling dimension : millimeters.

3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.

4.If there is any question with packing specification or packing method, please contact your l ocal HSMC sales office.

1

α

2

α

3

α

-

-

-

0.1000 -

*

0.0500 -

*

5

°

*

2

°

*

2

°

*

-

-

-

*:Typical

2.54

*

1.27

*

5

°

*

2

°

*

2

°

*

Important Notice:

• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.

• HSMC reserves the right to make changes to its products without notice.

•

HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.

• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or appl ication assistance.

Head Office And Factory :

•

Head Office

Tel : [phone] Fax : [phone]

•

Factory 1 :

Tel : [phone]~5 Fax : [phone]

HML1225, HXL1225 HSMC Product Specification

(Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.

No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C