HSMC HTL294MJ Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HJ200202
Issued Date : 2000.12.21
Revised Date : 2002.01.23
Page No. : 1/3
HTL294MJ
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTL294MJ is designed for high voltage low power switching
applications especially for use in telephone and telecommunication
circuits.
TO-252
Absolute Maximum Ratings
• Maximum Temperatures
Stor age Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature...................................................................................... 150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C).................................................................................... 1.5 W
• Maximum Voltages and Currents (Ta=25°C)
VCBO Collector to Base Voltage...................................................................................... -400 V
VCEO Collector to Emitter Voltage................................................................................... -400 V
VEBO Emitter to Base Voltage............................................................................................. -6 V
IC Collector Current....................................................................................................... -800 mA
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -400 - - V IC=-100uA, IE=0
BVCEO -400 - - V IC=-1mA, IB=0
BVEBO -6 - - V IE=10uA
ICBO - - -1 uA VCB=-400V, IE=0
ICES - - -10 uA VCE=-400V, IE=0
IEBO - - -0.2 uA VEB=-6V, IC=0
*VCE(sat)1 - - -200 mV IC=-10mA, IB=-1mA
*VCE(sat)2 - - -300 mV IC=-50mA, IB=-5mA
*VCE(sat)3 - - -1.2 V IC=-80mA, IB=-4mA
*VBE(sat) - - -750 mV IC=-10mA, IB=-1mA
*hFE1 50 - - VCE=-10V, IC=-1mA
*hFE2 60 - 250 VCE=-10V, IC=-20mA
*hFE3 50 - - VCE=-10V, IC=-80mA
fT 30 - - MHz VCE=-20V, IE=-10mA, f=1MHz
Cob - - 30 pF VCB=-20V, f=1MHz , IE=0
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HTL294MJ HSMC Product Specification
HI-SINCERITY
V
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HJ200202
Issued Date : 2000.12.21
Revised Date : 2002.01.23
Page No. : 2/3
1000
Current Gain & Coll ector Current
hFE @ VCE=10
100
hFE
10
1
0.1 1 10 100 1000
Collec tor Current-IC (mA)
Sat urati on Voltage & Collector Current
10000
100000
10000
1000
CE(sat)
Satur ation Voltag e (mV)
100
10
V
1 10 100 1000
B
@ IC=20I
V
Collector Current-IC (mA)
CE(sat)
@ IC=10I
Capacit ance & Reverse-Biased Volt age
100
Cob
Sasturation Voltage & Collector Current
B
1000
Saturat ion Voltag e ( m V)
100
1 10 100 1000
BE(sat)
V
Collector Current-IC (mA)
@ IC=10I
B
Safe Operating Area
10
PT=1mS
(A)
1
C
0.1
Collect or Curre n t-I
PT=100mS
PT=1S
10
Capacitance (pF)
1
0.1 1 10 100
Rev e r se Biased Voltage ( V)
Power Derating
1.6
1.4
1.2
1
0.8
0.6
0.4
PD(W), Power Dissipation
0.2
0.01
1 10 100 1000
Forwar d Biased Vol tage-VCE (V)
0
0 50 100 150 200
Ta(oC), Ambient Temper ature
HTL294MJ HSMC Product Specification
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