HSMC HTL294MI Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 2000.12.21
Revised Date : 2001.03.08
Page No. : 1/3
HTL294MI
PNP EPITAXIAL PLANAR TRANSIST OR
Description
The HTL294MI is designed for high voltage low power switching
applications especially for use in telephone and telecommunication
circuits.
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature..................................................................................... 150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)...................................................................................... 1 W
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltag e..................................................................................... -400 V
VCEO Collector to Emitter Voltage .................................................................................. -400 V
VEBO Emitter to Base Voltage ............................................................................................ -6 V
IC Collector Current...................................................................................................... -400 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -400 - - V IC=-100uA, IE=0
BVCEO -400 - - V IC=-1mA, IB=0
BVEBO -6 - - V IE=10uA
ICBO - - -1 uA VCB=-400V, IE=0
ICES - - -10 uA VCE=-400V, IE=0
IEBO - - -0.2 uA VEB=-6V, IC=0
*VCE(sat)1 - - -200 mV IC=-10mA, IB=-1mA
*VCE(sat)2 - - -300 mV IC=-50mA, IB=-5mA
*VCE(sat)3 - - -1.2 V IC=-80mA, IB=-4mA
*VBE(sat) - - -750 mV IC=-10mA, IB=-1mA
*hFE1 50 - - VCE=-10V, IC=-1mA
*hFE2 60 - 250 VCE=-10V, IC=-20mA
*hFE3 50 - - VCE=-10V, IC=-80mA
fT 30 - - MHz VCE=-20V, IE=-10mA, f=1MHz
Cob - - 30 pF VCB=-20V, f=1MHz , IE=0
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HTL294MI HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : Preliminary Data
Issued Date : 2000.12.21
Revised Date : 2001.03.08
Page No. : 2/3
1000
Current Gain & Collector Current
100
hFE @ VCE=10V
hFE
10
1
0.1 1 10 100 1000
Collector Current-IC (mA)
Saturation Volt age & Coll ector Current
10000
100000
10000
1000
CE(sat)
V
Saturation Voltage (mV)
100
10
1 10 100 1000
Collector Current-IC (mA)
@ IC=20I
B
CE(sat)
V
@ IC=10I
Capacitance & Reverse-Biased Volt age
100
Cob
Saturation Volt age & Coll ector Current
B
1000
BE(sat)
V
Saturation Voltage (mV)
100
1 10 100 1000
Collector Current-IC (mA)
@ IC=10I
B
Safe Operating Area
10
PT=1mS
(A)
1
C
0.1
Collector Current-I
PT=100mS
PT=1S
10
Capac itanc e (pF)
1
0.1 1 10 100
Reverse Biased Volt a ge ( V)
Power Derating
1.2
1
0.8
0.6
0.4
PD(W) , Power Dissipation
0.2
0.01
1 10 100 1000
Forwar d Biased Vol tage-VCE (V)
0
0 50 100 150 200
Ta(oC) , Ambient T em peratu r e
HTL294MI HSMC Product Specification
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