HSMC HTL294J Datasheet

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : HJ200201
Issued Date : 2000.12.21
Revised Date : 2002.01.23
Page No. : 1/3

HTL294J

PNP EPITAXIAL PLANAR TRANSISTOR

Description

The HTL294J is designed for application that requires high voltage.

Features

• High Breakdown Voltage: 400(Min.) at IC=1mA

• High Current: IC=300mA at 25°C

Absolute Maximum Ratings

• Maximum Temperatures

Stor age Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature.................................................................................... +150 °C Maximum

TO-252

• Maximum Power Dissipation

Total Power Dissipation (Ta=25°C).................................................................................... 1.5 W

• Maximum Voltages and Currents (Ta=25°C)

VCBO Collector to Base Voltage...................................................................................... -400 V

VCEO Collector to Emitter Voltage................................................................................... -400 V

VEBO Emitter to Base Voltage............................................................................................. -6 V

IC Collector Current ...................................................................................................... -300 mA

Characteristics (Ta=25°C)

Symbol Min. Typ. Max. Unit Test Conditions

BVCBO -400 - - V IC=-100uA, IE=0
BVCEO -400 - - V IC=-1mA, IB=0
BVEBO -6 - - V IE=-10uA, IC=0

ICBO - - -1 uA VCB=-400V, IE=0
ICES - - -10 uA VCE=-400V, IC=0

IEBO - - -0.2 uA VEB=-6V, VBE=0
*VCE(sat)1 - - -300 mV IC=-10mA, IB=-1mA
*VCE(sat)2 - - -500 mV IC=-50mA, IB=-5mA

*VBE(sat) - - -750 mV IC=-10mA, IB=-1mA

*hFE1 50 - - VCE=-10V, IC=-1mA
*hFE2 60 - 250 VCE=-10V, IC=-20mA
*hFE3 50 - - VCE=-10V, IC=-80mA

ft 50 - - MHz VCE=-20V, IE=-10mA, f=1MHz

Cob - - 30 pF VCB=-20V, f=1MHz, IE=0

*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%

HTL294J HSMC Product Specification

HI-SINCERITY

V

MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HJ200201
Issued Date : 2000.12.21
Revised Date : 2002.01.23
Page No. : 2/3

1000

100

hFE

10

0.1 1 10 100 1000

hFE @ VCE=10

Collector Current-IC (mA)

Sat urati on Voltage & C ol lector C urrent

1000

Current Gain & Coll ector Current

BE(sat)

V

@ IC=10I

B

10000

1000

CE(sat)

V

100

Saturation Voltage (mV)

10

1 10 100 1000

B

@ IC=20I

Collector Current-IC (mA)

CE(sat)

V

@ IC=10I

Capacit ance & Reverse-Biased Volt age

100

Sasturatio n Voltage & C ollector Cu rrent

B

Saturat ion Voltag e ( m V)

100

1 10 100 1000

Collector Current-IC (mA)

Safe Operati ng Area

10

PT=1mS

(A)

1

C

0.1

Collect or Curre n t-I

PT=100mS

PT=1S

10

Capacitance (pF)

1

0.1 1 10 100

Cob

Reverse Biased Voltage ( V)

Power Dera ting

1.6

1.4

1.2

1

0.8

0.6

0.4

PD(W), Power Dissipation

0.2

0.01
1 10 100 1000

Forwar d Biased Vol tage-VCE (V)

0

0 50 100 150 200

Ta(oC) , Ambient Temper ature

HTL294J HSMC Product Specification