HSMC HTL294D Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 2001.03.01
Revised Date : 2001.03.29
Page No. : 1/3
HTL294D
PNP EPITAXIAL PLANAR TRANSIST OR
Description
The HTL294D is designed for application that requires high voltage.
Features
High Breakdown Voltage: 400(Min.) at IC=1mA
•
High Current: IC=300mA at 25°C
•
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Ta=25°C)................................................................................... 1.5 W
Maximum Voltages and Currents (Ta=25°C)
•
VCBO Collector to Base Voltag e..................................................................................... -400 V
VCEO Collector to Emitter Voltage .................................................................................. -400 V
VEBO Emitter to Base Voltage ............................................................................................ -6 V
IC Collector Current ..................................................................................................... -250 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -400 - - V IC=-100uA, IE=0
BVCEO -400 - - V IC=-1mA, IB=0
BVEBO -6 - - V IE=-10uA, IC=0
ICBO - - -1 uA VCB=-400V, IE=0
ICES - - -10 uA VCE=-400V, IC=0
IEBO - - -0.2 uA VEB=-6V, VBE=0
*VCE(sat)1 - - -300 mV IC=-10mA, IB=-1mA
*VCE(sat)2 - - -500 mV IC=-50mA, IB=-5mA
*VBE(sat) - - -750 mV IC=-10mA, IB=-1mA
*hFE1 50 - - VCE=-10V, IC=-1mA
*hFE2 60 - 250 VCE=-10V, IC=-20mA
*hFE3 50 - - VCE=-10V, IC=-80mA
ft 50 - - MHz VCE=-20V, IE=-10mA, f=1MHz
Cob - - 30 pF VCB=-20V, f=1MHz, IE=0
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HTL294D HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : Preliminary Data
Issued Date : 2001.03.01
Revised Date : 2001.03.29
Page No. : 2/3
1000
100
hFE
10
0.1 1 10 100 1000
Current Gain & Collector Current
hFE @ VCE=10V
Collector Current-IC (mA)
Saturation Volt age & Coll ector Current
1000
BE(sat)
V
@ IC=10I
B
10000
Sasturation Voltage & Collector Current
1000
CE(sat)
V
100
Saturation Voltage (mV)
10
1 10 100 1000
100
Capacitance & Reverse-Biased Volt age
Collector Current-IC (mA)
@ IC=20I
B
CE(sat)
V
@ IC=10I
B
Saturation Voltage (mV)
100
1 10 100 1000
10
(A)
1
C
0.1
Collector Current-I
Collector Current-IC (mA)
Safe Operating Area
PT=1mS
PT=100mS
PT=1S
10
Capac itanc e (pF)
1
0.1 1 10 100
1.6
1.4
1.2
1
0.8
0.6
0.4
PD(W) , Power Dissipation
0.2
Cob
Reverse Biased Volt a ge ( V)
Power Derating
0.01
1 10 100 1000
Forwar d Biased Vol tage-VCE (V)
0
0 50 100 150 200
Ta(oC) , Ambient T em peratu r e
HTL294D HSMC Product Specification
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