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HI-SINCERITY
MICROELECTRONICS CORP.
HTIP50
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP50 is designed for line operated audio output amplifier
switch-mode power supply drivers and other switching applications.
Spec. No. : HE6761
Issued Date : 1994.10.06
Revised Date : 2002.02.26
Page No. : 1/3
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stor age Temperature............................................................................................ -50 ~ +150 °C
Junction Temperature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)..................................................................................... 40 W
Total Power Dissipation (Ta=25°C)....................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 500 V
BVCEO Collector to Emitter Voltage.................................................................................. 400 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................... 1 A
TO-220
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 500 - - V IC=1mA, IE=0
BVCEO 400 - - V IC=30mA, IB=0
BVEBO 5 - - V IE=0.1mA, IC=0
IEBO - - 1 mA VEB=5V, IC=0
ICEO - - 1 mA VCE=300V, IB=0
ICES - - 1 mA VCE=500V, VEB=0
*VCE(sat) - - 1 V IC=1A, IB=0.2A
VBE(on) - - 1.5 V IC=1A, VCE=10V
*hFE1 30 - 150 IC=0.3A, VCE=10V
*hFE2 10 - - IC=1A, VCE=10V
fT 10 - - MHz IC=0.2A, VCB=10V, f=2MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
HTIP50 HSMC Product Specification
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HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6761
Issued Date : 1994.10.06
Revised Date : 2002.02.26
Page No. : 2/3
1000
hFE @ VCE=10V
100
hFE
10
1 10 100 1000
125oC
25oC
75oC
Collector Current- IC (mA)
ON Voltage & C ollector Current
1000
25oC
75oC
Current Gai n & Collector Current
1000
Sat uration Voltage & Collect or Cur rent
CE(sat)
V
100
125oC
Satur ation Voltage ( m V)
10
1 10 100 1000
100
Cutoff Frequency & Collector Current
B
@ IC=5I
75oC
Collector Current- IC (mA)
VCE=10V
25oC
125oC
ON Voltage ( m V)
100
1 10 100 1000
100
10
Capacitance (pF)
Ca pacitance & Reverse-Biased Voltage
Collector Current- IC (mA)
BE(ON)
V
@ VCE=10V
Cob
Cutoff Frequency (MHz)...
10
1 10 100 1000
Collector Current (mA)
Safe Operating Area
10
PT=1ms
PT=100ms
PT=1s
(mA)
C
Collector Current-I
1
0.1
0.01
1
1 10 100
Reverse Biased Volt age ( V)
0.001
1 10 100 1000
Forwar d Voltage-VCE (V)
HTIP50 HSMC Product Specification