HSMC HTIP41C Datasheet

HI-SINCERITY

MICROELECTRONICS CORP.

HTIP41C

NPN EPITAXIAL PLANAR TRANSISTOR

Description

The HTIP41C is designed for use in general purpose amplifier and
switching applications.

Spec. No. : HE6707
Issued Date : 1993.01.13
Revised Date : 2002.03.04
Page No. : 1/3

Absolute Maximum Ratings (Ta=25°C)

• Maximum Temperatures

Stor age Temperature............................................................................................ -55 ~ +150 °C

Junction Temperature.................................................................................... +150 °C Maximum

• Maximum Power Dissipation

Total Power Dissipation (Tc=25°C)..................................................................................... 65 W

Total Power Dissipation (Ta=25°C)....................................................................................... 2 W

• Maximum Voltages and Currents

BVCBO Collector to Base Voltage..................................................................................... 100 V

BVCEO Collector to Emitter Voltage.................................................................................. 100 V

IC Collector Current............................................................................................................... 6 A

TO-220

Characteristics (Ta=25°C)

Symbol Min. Typ. Max. Unit Test Conditions

BVCBO 100 - - V IC=1mA, IE=0
BVCEO 100 - - V IC=30mA, IB=0

ICES - - 400 uA VCE=100V, IB=0
ICEO - - 700 uA VCE=60V, IB=0
IEBO - - 1 mA VEB=5V, IC=0

*VCE(sat) - - 1.5 V IC=6A, IB=600mA

*VBE(on) - - 2 V IC=6A, VCE=4V

*hFE1 30 - - IC=0.3A, VCE=4V
*hFE2 15 - 75 IC=3A, VCE=4V

fT 3 - - MHZ VCE=10V, IC=500mA, f=1MHz

*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%

Classification Of hFE2

Rank A B
hFE2 15-50 40-75

HTIP41C HSMC Product Specification

HI-SINCERITY

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MICROELECTRONICS CORP.

Characteristics Curve

Spec. No. : HE6707
Issued Date : 1993.01.13
Revised Date : 2002.03.04
Page No. : 2/3

100

Cur rent G ain & C o llector Current

125oC

25oC

hFE

hFE @ VCE=4V

10

1 10 100 1000 10000

10000

Collector Current- IC (mA)

ON Voltage & Collector Current

75oC

1000

Sat uration Voltage & Collect or Cur rent

CE(sat)

V

100

Satur ation Voltage ( m V)

10

1 10 100 1000 10000

10

1

Switching Time & Collector Current

B

@IC=10I

Collector Current- IC (mA)

25oC

75oC

125oC

Tstg

1000

ON Voltage (mV

BE(ON)

V

@ VCE=4V

25oC

75oC125oC

100

1 10 100 1000 10000

Collector Current-IC (mA)

Capa citance Reverse- B i ased Volta ge

1000

100

Capacitance (p F)

Cob

Ton

Switing T im e s (us

0.1
Tf

0.01

0.1 1.0 10.0

Collect o r Current ( A)

Safe Operating Area

100000

10000

(mA)

C

1000

Collector Current-I

PT=1ms
PT=100ms

PT=1s

100

10

10

0.1 1 10 100

Reverse-Biased Vol t a ge ( V)

1

1 10 100

Forwar d Voltage-VCE (V)

HTIP41C HSMC Product Specification