HSMC HTIP125 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HTIP125
PNP EPITAXIAL PLANAR TRANSIST OR
Description
The HTIP125 is designed for medium power linear and switching
applications.
Spec. No. : HE6730-B
Issued Date : 1997.08.13
Revised Date : 1999.08.01
Page No. : 1/3
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Tc=25°C) .................................................................................... 65 W
Total Power Dissipation (Ta=25°C)...................................................................................... 2 W
Maximum Voltages and Currents
•
BVCBO Collector to Base Voltage..................................................................................... -60 V
BVCEO Collector to Emitter Voltage.................................................................................. -60 V
BVEBO Emitter to Base Voltage.......................................................................................... -5 V
IC Collector Current............................................................................................................. -5 A
Characteristics
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -60 - - V IC=-1mA, IE=0
*BVCEO -60 - - V IC=-100mA, IB=0
ICEO - - -0.5 mA VCE=-30V, IE=0
ICBO - - -0.2 mA VCE=-60V, IB=0
IEBO - - -2 mA VEB=-5V, IC=0
*VCE(sat1) - - -2 V IC=-3A, IB=-12mA
*VCE(sat)2 - - -4 V IC=-5A, IB=-20mA
*VBE(on) - - -2.5 V IC=-3A, VCE=-3V
*hFE1 1000 - - IC=-0.5A, VCE=-3V
*hFE2 1000 - - IC=-3A, VCE=-3V
Cob - - 300 FP VCB=-10V, f=0.1MHz, IE=0
(Ta=25°C)
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6730-B
Issued Date : 1997.08.13
Revised Date : 1999.08.01
Page No. : 2/3
10000
Current Gai n & Collector Current
1000
100
hFE
10
1
1 10 100 1000 10000
10000
Collector Curren t (m A )
On Vol t age & Collector Cur rent
hFE @ VCE=4V
10000
Saturation Volt age & Coll ector Cu rrent
BE(sat)
V
@ IC=100I
1000
CE(sat)
V
@ IC=100I
Saturation Voltage (mV)
100
100 1000 10000
10
Switching Time & Collector Current
VCC=30V, IC=250IB1=-250I
Collector Current (mA)
Tstg
B4
B
B2
1000
On Voltage (mV)
100
1 10 100 1000 10000
BE(on)
V
@ VCE=4V
Collector Curren t (m A )
Capacitance & Reverse-Biased Voltage
1000
100
Capac itanc e (pF)
Cob
1
Tf
Switchin g T imes ( us)
0.1
110
100000
10000
(mA)
C
1000
100
Collector Current-I
10
Ton
Collector Current (A)
Safe Operating Ar ea
PT=1ms
PT=100ms
PT=1s
10
0.1 1 10 100
Reverse-Biased Vol t ag e ( V)
1
1 10 100
Forward-V
CE
(V)
HSMC Product Specification
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