HSMC HTIP122 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HTIP122
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP122 is designed for use in general purpose amplifier and lowspeed switching applications.
Spec. No. : HE6712
Issued Date : 1993.01.13
Revised Date : 2002.05.07
Page No. : 1/4
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stora ge Temperature........................................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 65 W
Total Power Dissipation (Ta=25°C)................................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage................................................................................................. 100 V
BVCEO Collector to Emitter Voltage.............................................................................................. 100 V
BVEBO Emitter to Base Voltage....................................................................................................... 5 V
IC Collector Current (Continuous)...................................................................................................... 5 A
IC Collector Current (Peak)................................................................................................................ 8 A
TO-220
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 100 - - V IC=1mA, IE=0
*BVCEO 100 - - V IC=100mA
ICBO - - 200 uA VCB=100V
ICEO - - 500 uA VCE=50V
IEBO - - 2 mA VEB=5V
*VCE(sat)1 - - 2 V IC=3A, IB=12mA
*VCE(sat)2 - - 4 V IC=5A, IB=20mA
*VBE(on) - - 2.5 V IC=3A, VCE=3V
*hFE1 1 - - K IC=0.5A, VCE=3V
*hFE2 1 - - K IC=3A, VCE=3V
Cob - - 200 pF VCB=10V, f=1MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Darlington Schematic
C
B
R2R1
E
HTIP122 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6712
Issued Date : 1993.01.13
Revised Date : 2002.05.07
Page No. : 2/4
100000
hFE @ VCE=3V
10000
1000
hFE
100
10
1 10 100 1000 10000
125oC
25oC
Collector Current- IC (mA)
75oC
Sat urati on Voltage & Collcetor Cu rrent
10000
Current Gain & Collector Current
CE(sat)
V
@ IC=2000I
B
10000
CE(sat)
V
@ IC=250I
1000
Satur ation Voltage ( m V)
100
100 1000 10000
25oC
125oC
B
75oC
Collector Current-IC (mA)
Sat urati on Voltage & Colltctor Current
10000
Sat ura tion Voltage & C ollector C urrent
75oC
1000
Saturation Voltage (mV)
100
1000 10000
25oC
125oC
Collector Current- IC (mA)
ON Voltage & C ollcetor Curr ent
10000
BE(ON)
V
@ VCE=3V
75oC
25oC
1000
ON Voltage ( m V)
125oC
75oC
1000
Saturation Voltage (mV)
100
100 1000 10000
25oC
125oC
CE(sat)
V
Collector Current- IC (mA)
@ IC=500I
B
Capa citance & Reverse- Biased Volt a ge
1000
100
Capacitance ( pF)
Cob
100
100 1000 10000
Collector Current-IC (mA)
10
0.1 1 10 100
Reverse-Biased Vol tage (V)
HTIP122 HSMC Product Specification
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