HSMC HTIP105 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6743
Issued Date : 1998.07.01
Revised Date : 2001.08.30
Page No. : 1/3
HTIP105
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP105 is designed for monolithic construction with built in baseemitter shunt resistors industrial.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temperature .......................................................................................................... -55 ~ +150 °C
Junction Temperature .................................................................................................. +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C) ................................................................................................... 80 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage.................................................................................................... -60 V
BVCEO Collector to Emitter Voltage................................................................................................. -60 V
BVEBO Emitter to Base Voltage......................................................................................................... -5 V
IC Collector Current............................................................................................................................ -8 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -60 - - V IC=-1mA
BVCEO -60 - - V IC=-30mA
BVEBO -5 - - V IE=-0.1mA
ICEO - - -50 uA VCE=-30V
ICBO - - -50 uA VCB=-60V
IEBO - - -8 mA VEB=-5V
*VCE(sat)1 - - -2 V IC=-3A, IB=-6mA
*VCE(sat)2 - - -2.5 V IC=-8A, IB=-80mA
*VBE(on) - - -2.8 V IC=-8A, VCE=-4V
*hFE1 1000 - 20000 IC=-3A, VCE=-4V
*hFE2 200 - - IC=-8A, VCE=-4V
Cob - - 300 pF VCE=-10V, f=100KHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Darlington Schematic
C
B
R2R1
E
HTIP105 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6743
Issued Date : 1998.07.01
Revised Date : 2001.08.30
Page No. : 2/3
10000
Current Gain & Collector Current
1000
100
hFE
10
1
1 10 100 1000 10000
10000
Collector Current (mA)
On Voltage & Collector Current
hFE @ VCE=4V
10000
BE(sat)
V
CE(sat)
V
@ IC=100I
@ IC=100I
1000
Saturation Voltag e ( mV)
100
10 100 1000 10000
Collect or Curren t (mA)
B
B
Switching Ti m e & C ollector Cur rent
10
Saturation Voltage & Collector Current
VCC=30V, IC=250IB1=-250I
B2
1000
On Vol t age (m V)
100
1 10 100 1000 10000
1000
100
Capacitan c e (pF)
Capacit ance & Reverse-B iased Vol tage
Collecto r Cur r e nt ( mA)
BE (on)
V
@ VCE=4V
Cob
Tstg
1
Tf
Switchin g Times (us)
0.1
110
Ton
Collect or Cur rent (mA)
Safe Operat ing Ar ea
100000
10000
(mA)
C
1000
100
Collect or Cur rent-I
10
PT=1ms
PT=100 ms
PT=1 s
10
0.1 1 10 100
Rever se- Biased Voltage (V)
1
1 10 100 1000
Forward Volt age- VCE (V)
HTIP105 HSMC Product Specification
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