HSMC HTIP102 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HTIP102
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP102 is designed for use in general purpose amplifier and lowspeed switching applications.
Spec. No. : HE6734
Issued Date : 1995.02.08
Revised Date : 2002.02.26
Page No. : 1/4
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Stora ge Temperature........................................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................................ +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)................................................................................................. 80 W
Total Power Dissipation (Ta=25°C)................................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage................................................................................................. 100 V
BVCEO Collector to Emitter Voltage.............................................................................................. 100 V
BVEBO Emitter to Base Voltage....................................................................................................... 5 V
IC Collector Current........................................................................................................................... 8 A
TO-220
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 100 - - V IC=1mA, IE=0
BVCEO 100 - - V IC=30mA, IB=0
ICBO - - 50 uA VCB=100V, IE=0
ICEO - - 50 uA VCE=50V, IB=0
IEBO - - 8 mA VEB=5V, IC=0
*VCE(sat)1 - - 2 V IC=3A, IB=6mA
*VCE(sat)2 - - 2.5 V IC=8A, IB=80mA
*VBE(on) - - 2.8 V IC=8A, VCE=4V
*hFE1 1 - 20 K IC=3A, VCE=4V
*hFE2 200 - - IC=8A, VCE=4V
Cob - - 200 pF VCB=10V , f=0.1MHz
*Pulse T est: Pulse Width ≤380us, Duty Cycle≤2%
Darlington Schematic
C
B
R2R1
E
HTIP102 HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE6734
Issued Date : 1995.02.08
Revised Date : 2002.02.26
Page No. : 2/4
100000
10000
1000
hFE
100
10
1
1 10 100 1000 10000
125oC
75oC
25oC
hFE @ VCE=4V
Collector Current- IC (mA)
Sat urati on Voltage & Col lector Current
10000
Current Gain & Collector Current
CE(sat)
V
@ IC=100I
B
125oC
10000
Sat urati on Voltage & Col lector Current
CE(sat)
V
@ IC=500I
1000
125oC
Satur ation Voltage ( m V)
100
100 1000 10000
10000
25oC
ON Voltage & Collcetor C urrent
B
Collector Current- IC (mA)
25oC
75oC
1000
Saturation Voltage (mV)
100
100 1000 10000
25oC
Collector Current- IC (mA)
Switching Time & C ollector Current
10
VCC=30V, IC=250IB1=-250I
1
Switch in g Times (u S)...
B2
Tstg
Tf
Ton
75oC
1000
ON Voltage (mV)
100
100 1000 10000
125oC
75oC
Collector Current-IC (mA)
BE(ON)
V
@ VCE=4V
Capacitance & Rev erse-Biased Voltage
1000
100
Capacitance (pF)
Cob
0.1
110
Collector Current (A)
10
0.1 1 10 100
Reverse-Biased Vol t ag e ( V)
HTIP102 HSMC Product Specification
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