HSMC HTIF127 Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HTIF127
PNP EPITAXIAL PLANAR TRANSIST OR
Description
The HTIF127 is designed for use in general purpose amplifier and
low-speed switching applications.
Spec. No. : HE9216-A
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 1/3
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature................................................................................... +150 °C Maximum
Maximum Power Dissipation
•
Total Power Dissipation (Tc=25°C) .................................................................................... 45 W
Maximum Voltages and Currents
•
BVCBO Collector to Base Voltage................................................................................... -100 V
BVCEO Collector to Emitter Voltage................................................................................ -100 V
BVEBO Emitter to Base Voltage.......................................................................................... -5 V
IC Collector Current (Pulse)................................................................................................. -8 A
IC Collector Current (Continuous)........................................................................................ -5 A
IB Base Current............................................................................................................ -120 mA
Characteristics
Symbol Min. Typ. Max. Unit Test Co nditions
BVCBO -100 - - V IC=-1mA
*BVCEO -100 - - V IC=-100mA
ICBO - - -200 uA VCB=-100V
ICEO - - -500 uA VCE=-50V
IEBO - - -2 mA VEB=-5V
*VCE(sat)1 - - -2 V IC=-3A, IB=-12mA
*VCE(sat)2 - - -4 V IC=-5A, IB=-20mA
*VBE(on) - - -2.5 V IC=-3A, VCE=-3V
*hFE1 1 - - K IC=-0.5A, VCE=-3V
*hFE2 1 - - K IC=-3A, VCE=-3V
(Ta=25°C)
(Ta=25°C)
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Spec. No. : HE9216-A
Issued Date : 1998.07.01
Revised Date : 1999.08.01
Page No. : 2/3
10000
1000
100
hFE
10000
10
1
Current Gai n & Collector Current
hFE @ VCE=4V
1 10 100 1000 10000
Collector Curren t (m A )
On Vol t age & Collector Cur rent
10000
Saturation Volt age & Coll ector Current
BE(sat)
V
CE(sat)
V
@ IC=100I
@ IC=100I
B2
1000
Saturation Voltage (mV)
100
10 100 1000 10000
10
Switching Time & Collector Current
VCC=30V, IC=250IB1=-250I
Collector Current (mA)
B
B
1000
On Voltage (mV)
100
1 10 100 1000 10000
1000
100
Capac itanc e (pF)
Capacitance & Reverse-Biased Volt age
Collector Curren t (m A )
BE(on)
V
@ VCE=4V
Cob
Tstg
1
Tf
Switchin g T imes ( us)
0.1
110
Ton
Collector Current (A)
Safe Operating Area
100000
10000
(mA)
C
Collector Current-I
1000
PT=1ms
PT=100ms
PT=1s
100
10
10
0.1 1 10 100
Reverse-Biased Vol t a ge (V)
1
1 10 100
Forwar d Voltage-VCE (V)
HSMC Product Specification
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