HSMC HSK2474J Datasheet
HI-SINCERITY
MICROELECTRONICS CORP.
HSK2474J
N - Channel MOSFETs
Description
Dynamic dv/dt Rating
•
Repetitive Avalanche rated
•
Surface Mount
•
Straigh Lead
•
Available in Tape&Reel
•
Fast Switching
•
Ease of Paralleling
•
Features
Spec. No. : Preliminary Data
Issued Date : 1999.11.01
Revised Date : 200011.01
Page No. : 1/5
Low Drain-Source ON Resistance - R
•
High Forward Transfer Admittance -|Yfs|=1.2S@VDS=50V, ID=1.3A
•
Low Leakage Current - I
•
Enhancement-Mode - Vth = 2.0~4.0V@VDS=4V, ID=250uA
•
Absolute Maximum Ratings
Maximum Temperatures
•
Storage Temperature............................................................................................ -55 ~ +150 °C
Junction Temperature.................................................................................................... +150 °C
Maximum Power Dissipation
•
Total Power Dissipation (Tc=25°C) .................................................................................... 25 W
Maximum Voltages and Currents
•
Drain to Source Breakdown Voltage................................................................................. 250 V
Drain to Gate Breakdown Voltage..................................................................................... 250 V
Gate to Source V oltag e.................................................................................................... ± 20 V
Drain Current (Cont.)......................................................................................................... 2.2 A
Drain Current (Pluse.)........................................................................................................ 8.8 A
=100uA (Max.)@VDS=200V
DSS
(Ta=25°C)
=1.2Ω(Typ.)@ VDS=10V, ID=1.3A
DS(ON)
Thermal Characteristics
Characteristic Symbol Max. Units
Junction to Case
Junction to Ambient
R
R
θJC
θJA
5
50
HSMC Product Specification
C/W
°
C/W
°
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : Preliminary Data
Issued Date : 1999.11.01
Revised Date : 200011.01
Page No. : 2/5
Electrical Characteristics
(Ta=25°C)
Characteristics Symbol Min. Typ. Max. Unit
Drain-Source Breakdown Voltage V
Gate Threshold Voltage V
Drain Cut-Off Current I
Gate Leakage Current I
(BR)DSS
GS(th)
DSS
GSS
250 - - V
2.0 - 4.0 V
- - 25 uA
-Forward Transconductance gfs 0.80 1.2 Drain-Source ON Resistance R
DS(ON)
Input Capacitance C
Reverse Transfer Capacitance C
Output Capacitance C
Switching Time
T
Total Gate Charge
(Gate-Source Plus Gate-Drain)
Gate-Source Charge Q
Gate-Drain Charge (Miller) Q
t
Q
iss
rss
oss
t
r
on
t
f
off
gs
gd
g
-1.22.0
- 280 - pF
-30-pF
-42-pF
-45-
-30-
-45-
- 135 -
--8.2nC
--1.8nC
--4.5nC
100
±
Test Conditions
ID=250uA
VDS=4V, ID=250uA
VDS=200V
uA
VGS=±20V
VDS=50V,ID=1.3A
VGS=10V, ID=1.3A
Ω
VDS=10V, VGS=0V
f=1.0MHz
VDD=100V, ID=1.0A
nS
RG=24Ω, RD=45
ID=2.7A, VDS=200V
VGS=10V
Ω
HSMC Product Specification
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